ZHEN Jiapeng; GUO Silin; ZHANG Danping; GONG Renfeng; XIANG Ziqiang; LYU Kehong; QIU Jing; LIU Guanjun

doi:10.7498/aps.74.20250009

Abstract

The new generation of detection equipment urgently requires high-sensitivity detectors. Traditional silicon-based detectors cannot meet the requirements for sensitivity and channel size. Diamondene has excellent performance such as high carrier mobility and wide band gap. Its excellent electronic characteristics are expected to effectively improve the sensitivity of the detector and provide a new way for developing the next generation of detectors. However, the detection mechanism based on diamondene is still unclear. Based on the above problems, the analytical model and mechanism of the transistor channel are first studied. By analyzing the relationship between the surface potential distribution of the current channel and the effective channel size in the working state and the sensitive characteristics of the two-dimensional material electrons of the channel, a theoretical model of the transistor detector is constructed based on the electronic characteristics of the channel material, and the working characteristics of the detector are investigated. The finite element simulation of the working mechanism, potential and electron distribution of the transistor detector is carried out. The simulation results show that the mobility level of the diamondene-based detector is 2.5 times that of the traditional silicon-based detector, which theoretically verifies the hypersensitive detection characteristics of the diamondene-based detector. This study is of great significance in designing and applying a new generation of carbon-based ultra-sensitive detection devices.

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Corresponding author: LIU Guanjun, liu342@nudt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52275555) and the Natural Science Foundation of Hunan Province, China (Grant No. 2024JJ6476).

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材料金刚石烯硅

带隙/eV 2.7 1.12
电子迁移率/m^–3 4500 1450
空穴迁移率/m^–3 1000 500
电子亲和能/eV 3.64 4.05

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Vol. 74, Issue 7 - 2025-04-05

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材料	金刚石烯	硅
带隙/eV	2.7	1.12
电子迁移率/m^–3	4500	1450
空穴迁移率/m^–3	1000	500
电子亲和能/eV	3.64	4.05

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