ZHU Wenlu; GUO Hongxia; LI Yangfan; MA Wuying; ZHANG Fengqi; BAI Ruxue; ZHONG Xiangli; LI Jifang; CAO Yanhui; JU Anan

doi:10.7498/aps.74.20241641

Abstract
In this work, the influence of ⁶⁰Co-γ ray irradiation on double trench SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated under different conditions. First, the effects of the total ionizing dose (TID) on the electrical performance of the device at different gate bias voltages are studied. The results indicate that at 150 krad (Si) irradiation dose, the threshold voltage of the device after being irradiated decreases by 3.28 and 2.36 V for gate voltages of +5 and –5 V bias, respectively, whereas the threshold voltage of the device after being irradiated decreases by only 1.36 V for a gate voltage of 0 V bias. The threshold voltage of the device after irradiation drifts in the negative direction, and the degradation of the electrical performance is especially obvious under the positive gate bias. This is attributed to the increase in the number of charges trapped in the oxide layer. At the same time, room temperature annealing experiments are performed on the irradiated devices for 24, 48 and 168 h. The shallow oxide trap charges generated by irradiation are annealed at room temperature, while the deep oxide trap charges and interface trap charges are difficult to recover at room temperature, resulting in an increase in the threshold voltage of the devices after being annealed, indicating that the electrical properties of the devices can be partially recovered after being annealed at room temperature. In order to characterize the effect of ⁶⁰Co-γ ray irradiation on the interfacial state defect density of the devices, low frequency noise (1/f) tests are performed at different doses and different gate bias voltages. The 1/f low frequency noise testing shows that under different bias voltages, the density of irradiation defects in the device increases due to the presence of induced oxide trap charges in the oxide layer of the device after being irradiated and the interfacial trap charges generated at the SiO₂/SiC interface. This results in an increase of 4–9 orders of magnitude in the normalized power spectral density of the drain current noise of the irradiated device. To further ascertain the irradiation damage mechanism of the device, a numerical simulation is carried out using the TCAD simulation tool, and the results show that a large number of oxide trap charges induced by irradiation in the oxide layer cause an increase in the electric field strength in the gate oxide layer close to the trench side, which leads to a negative drift of the threshold voltage of the device and affects the performance of the device. The results of this work can provide important theoretical references for investigating the radiation effect mechanism and designing the anti radiation reinforcement of double trench SiC MOSFET devices.

Keywords:
double-trench /

silicon carbide /

low-frequency noise /

total ionizing dose effect
FullText HTML

Cited By
DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

实验条件 V_G = 0 V V_G = –5 V V_G = +5 V

50 krad(Si) –0.58 V –1.27 V –1.52 V

100 krad(Si) –1.07 V –1.54 V –2.15 V

150 krad(Si) –1.36 V –2.36 V –3.28 V

DownLoad: CSV

实验条件 V_G = 0 V V_G = –5 V V_G = +5 V

$N{\text{ot}}$/(10¹⁰ cm^–2) 7.63 12.70 20.10×

$N{\text{it}}$/(10⁸ cm^–2) 28.90 5.75 133.00

DownLoad: CSV

$N{\text{ot}}$/(10¹⁷ cm^–3) 2.63 5.13 7.63

$\Delta V{\text{th}}$/V –0.969 –1.902 –2.826

DownLoad: CSV

map

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

[1]	Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi. Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica, doi: 10.7498/aps.73.20231829
[2]	Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, doi: 10.7498/aps.71.20211795
[3]	. Effects of point defects on thermal conductivity in cubic silicon carbide: A molecular dynamics study. Acta Physica Sinica, doi: 10.7498/aps.70.20211434
[4]	. 3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, doi: 10.7498/aps.70.20211795
[5]	Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping. Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica, doi: 10.7498/aps.70.20210503
[6]	Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, doi: 10.7498/aps.70.20202028
[7]	Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian. Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica, doi: 10.7498/aps.70.20201835
[8]	Li Zeng-Hui, Li Shu-Guang, Li Jian-She, Wang Lu-Yao, Wang Xiao-Kai, Wang Yan, Gong Lin, Cheng Tong-Lei. Double-trench assisted thirteen-core five-mode fibers with low crosstalk and low non-linearity. Acta Physica Sinica, doi: 10.7498/aps.70.20201825
[9]	Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng. Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica, doi: 10.7498/aps.69.20200232
[10]	Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei. Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica, doi: 10.7498/aps.68.20190350
[11]	Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, doi: 10.7498/aps.67.20181095
[12]	Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An. Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, doi: 10.7498/aps.67.20180829
[13]	Cao Jiang-Wei, Wang Rui, Wang Ying, Bai Jian-Min, Wei Fu-Lin. Measurement and study of low-frequency noise in TMR magnetic field sensor. Acta Physica Sinica, doi: 10.7498/aps.65.057501
[14]	Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, doi: 10.7498/aps.63.226101
[15]	Wang Ai-Di, Liu Zi-Yu, Zhang Pei-Jian, Meng Yang, Li Dong, Zhao Hong-Wu. Low frequency noise analysis and resistance relaxation in Au/SrTiO3/Au for bipolar resistive switching. Acta Physica Sinica, doi: 10.7498/aps.62.197201
[16]	Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica, doi: 10.7498/aps.61.177201
[17]	Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, doi: 10.7498/aps.61.097802
[18]	Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, doi: 10.7498/aps.61.028101
[19]	Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, doi: 10.7498/aps.57.6007
[20]	He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng. Test methods of total dose effects in verylarge scale integrated circuits. Acta Physica Sinica, doi: 10.7498/aps.53.194

Metrics

Abstract views: 437
PDF Downloads: 3
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Abstract

FullText HTML

Cited By

Metrics

Authors

Referees

About Journal

About

实验条件	V_G = 0 V	V_G = –5 V	V_G = +5 V
50 krad(Si)	–0.58 V	–1.27 V	–1.52 V
100 krad(Si)	–1.07 V	–1.54 V	–2.15 V
150 krad(Si)	–1.36 V	–2.36 V	–3.28 V

$N{\text{ot}}$/(10¹⁷ cm^–3)	2.63	5.13	7.63
$\Delta V{\text{th}}$/V	–0.969	–1.902	–2.826

实验条件	V_G = 0 V	V_G = –5 V	V_G = +5 V
$N{\text{ot}}$/(10¹⁰ cm^–2)	7.63	12.70	20.10×
$N{\text{it}}$/(10⁸ cm^–2)	28.90	5.75	133.00

Search

Article

留言板

Abstract

FullText HTML

Cited By

Metrics

Publishing process

Authors

Referees

About Journal

About