<i>In-situ</i> study of defect evolution and calculation of defect migration energy of FeCoCrNiAl<sub>0.3</sub> high-entropy alloy under high-energy electron irradiation

DIAO Sizhe; ZHANG Yifan; ZHAO Fangqian; Seung Jo Yoo; Somei Ohnuki; WAN Farong; ZHANG Yong; ZHAN Qian

doi:10.7498/aps.74.20241481

Abstract

The sluggish diffusion and severe lattice distortion effects in high-entropy alloys (HEAs) theoretically impede the movement of radiation-induced point defects, thereby effectively suppressing the formation of larger defect clusters and ultimately enhancing the radiation resistance of materials. Current research on the radiation resistance of HEAs primarily concentrates on the qualitative analysis of the migration behaviors of radiation-induced defects, while the quantitative research on the energy barriers of the migration behavior of point defects is still limited. As a representative HEA system, FeCoCrNiAl-based alloy exhibits exceptional properties, including enhanced ductility, remarkable shear resistance, high tensile yield strength, and excellent oxidation resistance. In this study, FeCoCrNiAl_0.3 alloy is selected as a model material and in-situ observations are conducted by using a 1.25-MV high-voltage electron microscope (HVEM) to systematically investigate the temporal evolution of irradiation-induced defects and precipitates at different temperatures. Based on the statistical data of saturated defect number density and defect growth rates under three irradiation temperatures, two intrinsic parameters of the alloy, i.e. interstitial atom migration energy and vacancy migration energy, are determined to be 1.09 eV and 1.47 eV, respectively. The higher interstitial atomic migration energy may be related to the incorporation of Al that has a smaller threshold energy and exhibits a larger atomic radius difference than the other elements in the alloy. In addition, the morphology and distribution of dislocation loops formed at 723 K and high-energy electron irradiation are characterized in detail, demonstrating the coexistence of perfect dislocation loops and Frank dislocation loops, both of which grow along different crystal planes. No systematic difference in growth process between the two types of loops is observed.

Keywords:

Authors and contacts

Corresponding author: ZHAN Qian, qzhan@mater.ustb.edu.cn

Funds: Project supported by the National MCF Energy R&D Program (Grant No. 2019YFE03130002) and the National Natural Science Foundation of China (Grant No. 11775018).

FullText HTML

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]

Cited By

DownLoad: Full-Size Img PowerPoint

温度/K	饱和密度/(10²¹ m^–3)	生长率(nm·min^–1)
673	8.25	0.63
723	3.01	1.673
773	2.48	3.228

DownLoad: CSV

材料	空位迁移能 $ {E}_{{\mathrm{m}}}^{{\mathrm{v}}} $/eV	间隙原子迁移能 $ {E}_{{\mathrm{m}}}^{{\mathrm{i}}} $/eV
Fe	0.7	0.26
Cu	0.3	0.12
Au	0.44	0.19
Al	0.29	0.08
Ni	0.6	0.18
Fe-10Cr	0.66	—
F82H	1.2	0.3
V-4Cr-Ti	1.0	0.5
316L	1.07	—
FeCoCrNiAl_0.3*	1.47*	1.09*
注: *为本文工作

DownLoad: CSV

map

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]

[1]	Shen Zi-Qin, Ai De-Sheng, Lü Sha-Sha, Gao Jie, Lai Wen-Sheng, Li Zheng-Cao. OKMC simulation of matrix defect evolution of Fe-C Alloy under irradiation. Acta Physica Sinica, 2022, 71(16): 168703. doi: 10.7498/aps.71.20220090
[2]	Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability. Acta Physica Sinica, 2022, 71(3): 037202. doi: 10.7498/aps.71.20211265
[3]	He Wei-Di, Zhang Pei-Yuan, Liu Xiang, Tian Xue-Fen, Fu Xin-Ge, Deng Ai-Hong. Defects in H/He neutral beam irradiated potassium doped tungsten alloy by positron annihilation technique. Acta Physica Sinica, 2021, 70(16): 167803. doi: 10.7498/aps.70.20210438
[4]	Liu Si-Mian, Han Wei-Zhong. Mechanism of interaction between interface and radiation defects in metal. Acta Physica Sinica, 2019, 68(13): 137901. doi: 10.7498/aps.68.20190128
[5]	Li Wei-Qin, Hao Jie, Zhang Hai-Bo. Surface potential dynamic characteristics of the insulating sample under high-energy electron irradiation. Acta Physica Sinica, 2015, 64(8): 086801. doi: 10.7498/aps.64.086801
[6]	Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2014, 63(4): 047202. doi: 10.7498/aps.63.047202
[7]	Ji Le, Yang Sheng-Zhi, Cai Jie, Li Yan, Wang Xiao-Tong, Zhang Zai-Qiang, Hou Xiu-Li, Guan Qing-Feng. Damage and structural defects in the surface lager of pure molybdenum induced by high-current pulsed electron beam. Acta Physica Sinica, 2013, 62(23): 236103. doi: 10.7498/aps.62.236103
[8]	Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2012, 61(5): 057202. doi: 10.7498/aps.61.057202
[9]	Han Lu-Hui, Zhang Chong-Hong, Zhang Li-Qing, Yang Yi-Tao, Song Yin, Sun You-Mei. X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions. Acta Physica Sinica, 2010, 59(7): 4584-4590. doi: 10.7498/aps.59.4584
[10]	Zou Hui, Jing Hong-Yang, Wamg Zhi-Ping, Guan Qing-Feng. The vacancy defect clusters in polycrystalline pure nickle induced by high-current pulsed electron beam. Acta Physica Sinica, 2010, 59(9): 6384-6389. doi: 10.7498/aps.59.6384
[11]	Zhou Kai, Li Hui, Wang Zhu. Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica, 2010, 59(7): 5116-5121. doi: 10.7498/aps.59.5116
[12]	Guan Qing-Feng, Cheng Du-Qing, Qiu Dong-Hua, Zhu Jian, Wang Xue-Tao, Cheng Xiu-Wei. The vacancy defect clusters in polycrystalline pure aluminum induced by high-current pulsed electron beam. Acta Physica Sinica, 2009, 58(7): 4846-4852. doi: 10.7498/aps.58.4846
[13]	Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, 2007, 56(3): 1603-1607. doi: 10.7498/aps.56.1603
[14]	Hou Bi-Hui, Lu Xiao-Pu, Shi Chao-Shu, Yang Bing-Xin. . Acta Physica Sinica, 1995, 44(8): 1296-1301. doi: 10.7498/aps.44.1296
[15]	LIU FANG-XIN, ZHANG CHEN-HUA, JIN SI-ZHA0, XUAN ZHI-HUA, LI ZONG-MING. ELECTRON SPIN RESONANCE STUDY ON RADIOLYTIC DEFECT IN OPTICAL FIBER. Acta Physica Sinica, 1994, 43(11): 1871-1875. doi: 10.7498/aps.43.1871
[16]	GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156. doi: 10.7498/aps.37.152
[17]	PENG CHEN, SUN HENG-HUI. THE BULK AND INTERFACE DEFECTS IN ELECTRON IRRADIATED InP. Acta Physica Sinica, 1987, 36(11): 1408-1415. doi: 10.7498/aps.36.1408
[18]	LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG. STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION. Acta Physica Sinica, 1987, 36(6): 745-751. doi: 10.7498/aps.36.745
[19]	WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN. A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS. Acta Physica Sinica, 1986, 35(5): 638-642. doi: 10.7498/aps.35.638
[20]	DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI. DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485. doi: 10.7498/aps.33.477

Catalog

Vol. 74, Issue 7 - 2025-04-05

Metrics

Abstract views: 502
PDF Downloads: 16
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: ZHAN Qian, qzhan@mater.ustb.edu.cn

FullText HTML

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: ZHAN Qian, qzhan@mater.ustb.edu.cn

FullText HTML

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About