YUAN Heze; CHEN Xinliang; LIANG Bingquan; SUN Aixin; WANG Xuejiao; ZHAO Ying; ZHANG Xiaodan

doi:10.7498/aps.74.20241292

Abstract

With the rapid development of photovoltaic technology, crystalline silicon (c-Si) solar cells, as the mainstream photovoltaic devices, have received significant attention due to their excellent performances. In particular, silicon heterojunction (SHJ) solar cells, tunnel oxide passivated contact (TOPCon), and passivated emitter and rear cell (PERC) represent the cutting-edge technologies in c-Si solar cells. The surface passivation layer of crystalline silicon solar cells, as one of the key factors to improve cell performances, has been closely linked to the development of crystalline silicon solar cells. Due to the complex mechanism of passivation layer and the high requirements of experimental research, achieving high quality surface passivation is challenging. In this paper, the key issues and research progress of interface passivation technologies for SHJ, TOPCon, and PERC solar cells are comprehensively reviewed. Firstly, the research progress of key technological breakthrough in SHJ solar cell is reviewed systematically, and the influences of growth conditions and doping layer on the passivation performances of SHJ solar cell are discussed in detail. Secondly, the important strategies and research achievements for improving the passivation performances of TOPCon and PERC solar cells in the past five years are systematically described. Finally, the development trend of passivation layer technology is prospected. This review provides valuable insights for improving future technology and enhancing performance of c-Si solar cells.

Keywords:

Authors and contacts

Corresponding author: CHEN Xinliang, cxlruzhou@163.com

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB4200102) and the Natural Science Foundation of Tianjin, China (Grant No. 21JCYBJC00270).

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Cited By

DownLoad: Full-Size Img PowerPoint

R_H	SiH₄ flow/ sccm	H₂ flow/ sccm	R^*	τ_eff/μs	iV_oc/mV
纯 c-Si	—	—	—	0.98	520
R_H = 1	40	40	0.970	8.2	538
R_H = 10	40	400	0.143	148.1	668
R_H = 25	40	1000	0.076	127.1	661

DownLoad: CSV

双层钝化(c-Si/界面层/覆盖层)	τ_eff/μs	iV_oc/mV
c-Si/i-a-Si:H(R_H = 1)/ i-a-Si:H(R_H = 10)	33.9	606
c-Si/i-a-Si:H(R_H = 25)/ i-a-Si:H(R_H = 10)	138.9	665
c-Si/i-a-Si:H(R_H = 10)/ i-a-Si:H(R_H = 25)	197.6	683

DownLoad: CSV

结构	J_sc/(mA·cm^–2)	V_oc/mV	FF/%	η/%	Year	Ref.
单层	39.02	735.1	77.57	22.23	2022	[36]
单层	36.50	718.0	77.50	20.30	2023	[37]
单层	39.60	735.0	79.00	23.00	2024	[34]
双层	38.90	741.0	80.60	23.20	2019	[38]
双层	39.50	747.0	84.98	25.11	2020	[39]
双层	40.27	749.7	85.90	25.92	2024	[35]

DownLoad: CSV

生长方法	J_sc/(mA·cm^–2)	V_oc/mV	FF/%	η/%	Year	Ref.
热氧化	40.0	689.4	81.35	22.43	2020	[74]
PECVD	41.43	713.2	84.55	25.06	2023	[75]
化学氧化	41.38	730.8	81.9	24.8	2023	[76]
臭氧氧化	41.03	702.0	83.35	24.08	2024	[77]

DownLoad: CSV

c-Si	Cell structure	V_oc/mV	J_sc/(mA·cm^–2)	FF/%	η/%	Ref.
n	Metal/SiN_x+MgF₂/Al₂O₃/p⁺-Siemitter/n-c-Si/SiO_x/n⁺-poly Si layer/Metal(n-TOPCon)	724.9	42.5	83.3	25.7	[80]
p	Metal/SiN_x/P-doped emitter/p-c-Si/SiO_x/B-doped p-poly Si layer/Metal(p-TOPCon)	701	41.1	79.9	23	[81]
p	Metal/SiN_x-MgF₂/Al₂O₃/p⁺-Si/p-c-Si/SiO_x/	714.2	42.4	80.8	24.3	[82]
p	P-doped n-poly Si layer/Metal(TOPCoRE)Metal/SiN_x/Al₂O₃/ B-diffusion FSF/p-c-Si/SiO_x/P-doped n-poly Si layer/ Metal (TOPCoRE)	732.3	42.05	84.3	26	[83]

DownLoad: CSV

改善方法	J_sc/(mA·cm^–2)	V_oc/mV	FF/%	η/%	Year	Refs.
生长两步氧化	41.80	707.0	83.0	24.60	2022	[85]
正面金属电极和硼发射极之间沉积局部p-a-Si:H	42.03	696.0	83.76	24.50	2024	[84]
在钝化层中插入本征非晶硅(i-a-Si:H)层	40.60	715.0	82.30	23.83	2024	[10]
利用管式PECVD制备掺C poly-Si(n+)	40.81	700.4	82.70	23.64	2024	[86]
RS-ALD法制备高质量Al₂O₃薄膜	—	736.3	84.05	25.78	2024	[87]
中温光浸泡工艺	42.10	729.0	84.0	25.80	2024	[88]

DownLoad: CSV

改善方法	J_sc/(mA·cm^–2)	V_oc/mV	FF/%	η/%	Year	Ref.
利用臭氧氧化制备氧化铝层	37.89	590	75.70	16.92	2020	[95]
5层 SiN_x:H 薄膜	10.273	681.63	81.19	22.56	2021	[94]
背面以 H_fO₂ 作为钝化材料钝化	39.67	662.9	79.26	20.84	2022	[93]
离子注入SiO_x N_y:H	40.80	686	81.54	22.80	2022	[96]
发射极表面通过硫化氢(H₂S)气体反应钝化	40.03	649	76.79	19.93	2023	[97]
利用SiO₂/Al₂O₃双层钝化	38.73	649	79.00	19.90	2024	[98]
多层SiN_x/SiO_xN_y/SiN_x钝化	41.70	682	80.57	22.91	2024	[99]

DownLoad: CSV

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