Influence of annealing temperature on the performance of radio frequency magnetron sputtered Sn-doped Ga<sub>2</sub>O<sub>3</sub> films and its solar-blind photodetector

XU Yihong; FAN Weihang; WANG Chen

doi:10.7498/aps.74.20240972

Abstract

In this study, Sn-doped Ga₂O₃ thin films are prepared on sapphire substrate by radio frequency magnetron sputtering at ambient temperature, and then annealed at different temperatures (400–800 ℃) in nitrogen atmosphere. The corresponding metal-semiconductor-metal (MSM) solar blind photodetectors (PDs) are prepared based on those films before and after annealing to explore the influence of annealing temperature on the characteristics of the films and device properties. The results show that the as-deposited Sn-doped Ga₂O₃ film displays amorphous structure. With the increase of annealing temperature, the proportion of O_L, Ga³⁺ and Sn⁴⁺ ions in the film increase, and the band gap of the film decreases slightly, indicating that the conductivity of the film is enhanced and the quality of the film is improved. When the annealing temperature increases to 700 ℃, the β-Ga₂O₃ (${\bar 402} $) crystal surface diffraction peak appeares, indicating that the film begins to crystallize. As the annealing temperature increases to 800 ℃, the proportion of O_L, Ga³⁺ and Sn⁴⁺ decreases, and the quality and conductive properties of the film deteriorate, which may be attributed to Sn surface segregation and Al diffusion into the film from the substrate. In addition, the average particle size and surface roughness of the film surface increase with annealing temperature increasing, which is consistent with the changing trend of film characteristics. Then, based on Sn-doped Ga₂O₃ thin films before and after annealing, the MSM solar blind PDs are prepared to explore the influence of annealing temperature on device performance. The quality of the film and its conductive characteristics play a role in regulating the performance of Sn-doped Ga₂O₃ solar blind PD. The optimal device performance can be obtained when the annealing temperature is 700 ℃, with a low dark current of 89.97 pA, a responsivity of 18.4 mA/W, a light-dark current up to 1264, and the rise/fall time of 0.93 s/0.87 s. In summary, the annealing temperature has an important effect on the characteristics of Sn-doped Ga₂O₃ films and the performance of solar blind PDs, which has certain guiding significance for the preparation of high-quality Sn-doped Ga₂O₃ films and high-performance solar blind PDs.

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Corresponding author: WANG Chen, chenwang@xmut.edu.cn

Funds: Project supported by the Natural Science Foundation of Xiamen, China (Grant No. 3502Z202373061), the Natural Science Foundation of Fujian Province, China (Grant No. 2023J011459), the National Natural Science Foundation of China (Grant No. 61904155), the Science and Technology Project of Fujian Provincial Department of Education, China (Grant No. JAT200484), and the Association for Science and Technology of Fujian Province, China.

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参数	值
背景压力/Torr	5×10^–7
工作压力/Torr	9×10^–3
溅射功率/W	500
气体总流量/SCCM	40
氧流量比[O₂/(O₂+Ar)]/%	1.0
沉积温度/℃	室温
薄膜厚度/nm	~102
退火气氛和时间	N₂气体和2 h
退火温度/℃	As-dep., 400, 500, 600, 700, 800
注: SCCM为体积流量单位(standard cubic centimeter per minute).

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退火温度/℃	暗电流/pA	光电流/nA	光暗>电流比	响应度/(mA·W^–1)	上升时间/s	下降时间/s
As-dep.	1.10	0.94	854.5	0.15	1.61	1.02
400	23.33	22.05	945.14	3.57	2.28	3.54
500	63.85	66.73	1045.11	10.8	1.43	1.34
600	80.28	89.65	1116.72	14.5	1.03	0.98
700	89.97	113.74	1264.20	18.4	0.93	0.87
800	1.14	0.09	82.46	0.02	1.12	17.36

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Vol. 74, Issue 2 - 2025-01-20

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