Vertical MSM-type CsPbBr<sub>3</sub> thin film photodetectors with fast response speed and low dark current

Cheng Xue-Ming; Cui Wen-Yu; Zhu Lu-Ping; Wang Xia; Liu Zong-Ming; Cao Bing-Qiang

doi:10.7498/aps.73.20241075

Abstract

Halide perovskites exhibit excellent electrical and optical properties and are ideal candidates for active layers in optoelectronic devices, especially in the field of high-performance photodetection, where they demonstrate a competitive advantage in terms of development prospects. Among them, the all-inorganic perovskite CsPbBr₃ has received widespread attention due to its better environmental stability. It is demonstrated in this work that a vertical MSM-type CsPbBr₃ thin-film photodetector has characteristics of fast response time and ultra-low dark current. The use of a vertical structure can reduce the transit distance of photo carriers, enabling the device to achieve a fast response time of 63 μs, which is two orders of magnitude higher than the traditional planar MSM-type photodetectors with a response time of 10 ms. Then, by spinning a charge transport layer between the p-type CsPbBr₃ and Ag electrodes, effective separation of photocarriers at the interface is realized and physical passivation between the perovskite and metal electrodes is also achieved. Due to the superior surface quality of the spun TiO₂ film compared with the NiO_x film, and through Sentaurus TCAD simulations and bandgap analyses, with TiO₂ serving as the electron transport layer, it effectively inhibits the transmission of excess holes in p-type CsPbBr₃. Consequently, the electron transport layer TiO₂ is more effective in reducing dark current than the hole transport layer NiO_x, with a dark current magnitude of only –4.81×10^–12 A at a –1 V bias. Furthermore, this vertical MSM-type CsPbBr₃ thin-film photodetector also has a large linear dynamic range (122 dB), high detectivity (1.16×10¹² Jones), and good photo-stability. Through Sentaurus TCAD simulation, it is found that the charge transport layer selectively blocks carrier transmission, thereby reducing dark current. The simulation results are in good agreement with experimental data, providing theoretical guidance for a more in-depth understanding of the intrinsic physical mechanisms.

Keywords:

Authors and contacts

Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2022YFC3700801), the Jinan Education Bureau, China (Grant No. JNSX2023015), and the Jinan Science and Technology Bureau, China (Grant No. 202333042).

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]

Cited By

DownLoad: Full-Size Img PowerPoint

Detector	Structure	Dark current/(10^–10 A)	D*/(10⁹ Jones)	τ_rise/τ_fall/(ms/ms)	Ref.
CsPbBr₃NPLs/Ag	Planar	–0.37(–3 V)	9300	75/72	[35]
n-Si/CsPbBr₃/Au	Planar	0.003(0 V)	105	190/291	[36]
1D-TiO₂/0D-CsPbBr₃/Au	Planar	4(1 V)	1800	9348/5951	[37]
CsPbBr₃/ZnO	Vertical	–5(–5 V)	7	0.061/1.4	[38]
SnO₂/CsPbBr₃/Carbon	Vertical	330(0 V)	370	0.11/0.23	[39]
CsPbBr₃/TiO₂/Ag	Vertical	–0.0481(–1 V)	1160	0.063/0.162	This work

DownLoad: CSV

map

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]

[1]	Sun Tang-You, Yu Yan-Li, Qin Zu-Bin, Chen Zan-Hui, Chen Jun-Li, Jiang Yue, Zhang Fa-Bi. Multi-band response Cs₂AgBiBr₆ double perovskite photodetector based on TiO₂ nanopillars. Acta Physica Sinica, 2024, 73(7): 078502. doi: 10.7498/aps.73.20231919
[2]	Su Ran, Xi Zhao-Ying, Li Shan, Zhang Jia-Han, Jiang Ming-Ming, Liu Zeng, Tang Wei-Hua. GaSe/β-Ga₂O₃ heterojunction based self-powered solar-blind ultraviolet photoelectric detector. Acta Physica Sinica, 2024, 73(11): 118502. doi: 10.7498/aps.73.20240267
[3]	Wang Ai-Wei, Zhu Lu-Ping, Shan Yan-Su, Liu Peng, Cao Xue-Lei, Cao Bing-Qiang. High-performance CsSnBr₃/Si PN heterojunction photodetectors prepared by pulsed laser deposition epitaxy. Acta Physica Sinica, 2024, 73(5): 058503. doi: 10.7498/aps.73.20231645
[4]	Wang Fei, Yang Zhen-Qing, Xia Yu-Hong, Liu Chang, Lin Chun-Dan. Nonadiabatic molecular dynamics study on effect of Ge/Sn alloy on hot carrier relaxation of CsPbBr₃ perovskite. Acta Physica Sinica, 2024, 73(2): 028801. doi: 10.7498/aps.73.20231061
[5]	Zhang Xi-Sheng, Yan Chun-Yu, Hu Li-Na, Wang Jing-Zhou, Yao Chen-Zhong. Perovskite solar cells prepared by processing CsPbBr₃ nanocrystalline films in low temperature solution. Acta Physica Sinica, 2024, 73(22): 228101. doi: 10.7498/aps.73.20241152
[6]	Zhao Ji-Yu, Tan Qiu-Hong, Liu Lei, Yang Wei-Ye, Wang Qian-Jin, Liu Ying-Kai. High-performance photodetectors based on Au nanoislands decorated CdSSe nanobelt. Acta Physica Sinica, 2023, 72(9): 098103. doi: 10.7498/aps.72.20222021
[7]	Liu Xiao-Xuan, Sun Fei-Yang, Wu Ying, Yang Sheng-Yi, Zou Bing-Suo. Research progress of silicon nanowires array photodetectors. Acta Physica Sinica, 2023, 72(6): 068501. doi: 10.7498/aps.72.20222303
[8]	Yang Mei-Li, Zou Li, Cheng Jia-Jie, Wang Jia-Ming, Jiang Yu-Fan, Hao Hui-Ying, Xing Jie, Liu Hao, Fan Zhen-Jun, Dong Jing-Jing. Improvement of performance of CsPbBr₃ perovskite solar cells by polyvinylidene fluoride additive. Acta Physica Sinica, 2023, 72(16): 168101. doi: 10.7498/aps.72.20230636
[9]	Hu Zi-Ting, Shu Xin, Wang Xiang, Li Yue, Xu Run, Hong Feng, Ma Zhong-Quan, Jiang Zui-Min, Xu Fei. Air-stable CsPbIBr₂ photodetector via dual-ligand-assisted solution strategy. Acta Physica Sinica, 2022, 71(11): 116801. doi: 10.7498/aps.71.20212143
[10]	Zhong Ting-Ting, Zhang Chen, Shindume Lomboleni Hamukwaya, Xu Wang-Shu, Tang Kun-Peng, Xu Xiang, Sun Wen-Tian, Hao Hui-Ying, Dong Jing-Jing, Liu Hao, Xing Jie. Efficient and stable carbon-based CsPbBr₃ solar cells added with PEABr additive. Acta Physica Sinica, 2022, 71(2): 028101. doi: 10.7498/aps.71.20211344
[11]	Ma Shu-Peng, Lin Fei-Yu, Luo Yuan, Zhu Liu, Guo Xue-Yi, Yang Ying. Formation mechanism of CsPbBr₃ in multi-step spin-coating process. Acta Physica Sinica, 2022, 71(15): 158101. doi: 10.7498/aps.71.20220171
[12]	Shu Yan-Tao, Zhang You-Wei, Wang Shun. Photodetectors based on homojunctions of transition metal dichalcogenides. Acta Physica Sinica, 2021, 70(17): 177301. doi: 10.7498/aps.70.20210859
[13]	Zhao Yi-Mo, Huang Zhi-Wei, Peng Ren-Miao, Xu Peng-Peng, Wu Qiang, Mao Yi-Chen, Yu Chun-Yu, Huang Wei, Wang Jian-Yuan, Chen Song-Yan, Li Cheng. Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation. Acta Physica Sinica, 2021, 70(17): 178506. doi: 10.7498/aps.70.20210138
[14]	Lu Zi-Qing, Han Qin, Ye Han, Wang Shuai, Xiao Feng, Xiao Fan. Low dark current and high bandwidth evanescent wave coupled PIN photodetector array for 400 Gbit/s receiving system. Acta Physica Sinica, 2021, 70(20): 208501. doi: 10.7498/aps.70.20210781
[15]	Meng Xian-Cheng, Tian He, An Xia, Yuan Shuo, Fan Chao, Wang Meng-Jun, Zheng Hong-Xing. Field effect transistor photodetector based on two dimensional SnSe₂. Acta Physica Sinica, 2020, 69(13): 137801. doi: 10.7498/aps.69.20191960
[16]	An Tao, Tu Chuan-Bao, Gong Wei. Organic color photodetectors based on tri-phase bulk heterojunction with wide sectrum and photoelectronic mltiplication. Acta Physica Sinica, 2018, 67(19): 198503. doi: 10.7498/aps.67.20180502
[17]	Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei. Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica, 2018, 67(11): 118502. doi: 10.7498/aps.67.20180129
[18]	Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun. Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector. Acta Physica Sinica, 2017, 66(19): 198502. doi: 10.7498/aps.66.198502
[19]	Guo Jian-Chuan, Zuo Yu-Hua, Zhang Yun, Zhang Ling-Zi, Cheng Bu-Wen, Wang Qi-Ming. Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode. Acta Physica Sinica, 2010, 59(7): 4524-4529. doi: 10.7498/aps.59.4524
[20]	Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864. doi: 10.7498/aps.57.7860

20-20241075Suppl.pdf

Catalog

Vol. 73, Issue 20 - 2024-10-20

Metrics

Abstract views: 2000
PDF Downloads: 158
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

FullText HTML : translate this paragraph

Supplements

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

FullText HTML : translate this paragraph

Supplements

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About