Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga2O3 microsheet heterojunction

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Abstract

Ultrawide-bandgap (4.9 eV) β-Ga ₂O ₃material possesses exceptional properties such as a high critical-breakdown field (~8 MV/cm) and robust chemical and thermal stability. However, due to the challenges in the growth of p-type β-Ga ₂O ₃, the preparation of homojunction devices is difficult. Therefore, the utilization of heterojunctions based on β-Ga ₂O ₃provides a viable approach for fabricating ultraviolet photodetectors. Poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS), a p-type organic polymer material, exhibits high transparency in a 250–700 nm wavelength range. Additionally, its remarkable conductivity (>1000 S/cm), high hole mobility (1.7 cm ²·V ^–1·s ^–1), and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer. Consequently, the combination of p-type PEDOT:PSS with n-type β-Ga ₂O ₃in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices. In this study, a β-Ga ₂O ₃microsheet with dimensions: 4 mm in length, 500 μm in width, and 57 μm in thickness, is successfully exfoliated from a β-Ga ₂O ₃single crystal substrate by using a mechanical exfoliation technique. Subsequently, a PEDOT:PSS/ β-Ga ₂O ₃organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of the β-Ga ₂O ₃microsheet. The obtained device exhibits typical rectification characteristics, sensitivity to 254 nm ultraviolet light, and impressive self-powering performance. Furthermore, the heterojunction photodetector demonstrates exceptional photosensitive properties, achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484% under 254 nm UV light illumination (16 μW/cm ²) at 0 V. Additionally, the device exhibits a rapid photoresponse time of 0.25 s/0.20 s and maintains good stability and repeatability over time. Notably, after a three-month duration, the photodetection performance for 254 nm UV light detection remained unchanged, without any significant degradation. This in-depth research provides a novel perspective and theoretical foundation for developing innovative UV detectors and paving the way for future advancements in the field of optoelectronics.

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Corresponding author:Feng Qiu-Ju,qjfeng@dlut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 12075045), the Dalian Technological Innovation Fund Project, China (Grant Nos. 2023JJ12GX016, 2023JJ12GX013, 2022JJ12GX023), the Liaoning Normal University 2022 Outstanding Research Achievements Cultivation Fund, China (Grant No. 22GDL002), and the Liaoning Normal University Education Teaching Reform Research Project, China (Grant No. LSJGJXFF202330).

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Structure	R/(mA·W^–1)	Light intensity/(μW·cm^–2)	Rise/decay time	EQE/%	Ref.
PEDOT:PSS/Ga₂O₃microwire	3.25×10³	16	0.25 s/0.20 s	1591	This work
Ppy-PEDOT:PSS/GaN	1.1×10³	6.56×10³	0.25 s/0.28 s	4.0×10⁵	[23]
Ga₂O₃/spiro-OMeTAD	65	1	2.98 μs/28.49 μs	32	[24]
PEDOT:PSS/Ga₂O₃(Bulk)	37	1.5×10^–3	9 ms/9 ms	18	[25]
PEDOT:PSS/Ga₂O₃/Si	29	12	60 ms/88 ms	15	[26]
ZnO/PVK/PEDOT/CNT	9.96	210	1.5 s/6 s	~0.6	[27]

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Vol. 73, Issue 15 - 2024-08-05

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