- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides, with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates with no need of vacuum or lithography to be used, thus significantly reducing cost and receiving more and more attention. In this paper, we use inkjet printing technology to prepare a bottom gate bottom contact thin film transistor (TFT) by using indium-zinc-tin-oxide (IZTO) semiconductor. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge in the volatilization process of a single solvent, ultimately presenting a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, IZTO thin film transistor printed with binary solvents exhibits excellent electrical properties. The ratio of width/length = 50/30 exhibits a high on-off ratio of 1.21×10 ⁹, a high saturation field-effect mobility is 16.6 cm ²/(V·s), a low threshold voltage is 0.84 V, and subthreshold swing is 0.24 V/dec. The uniform and flat active layer thin film pattern can form good contact with the source leakage electrode, and the contact resistances of TFT devices with different width-to-length ratios are less than 1000 Ω, which can reach the basic conditions of high mobility thin film transistors prepared by inkjet printing. Therefore, using solvent mixture provides a universal and simple way to print oxide films with required surface topology, and present a visible path for inkjet printing of high-mobility thin film transistors.

Keywords:

Authors and contacts

Corresponding author:Li Xi-Feng,lixifeng@shu.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3603805).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

Cited By

DownLoad: Full-Size Img PowerPoint

IZTO墨水样品	ρ/(g·cm^–3)	η/cP	γ/(mN·m^–1)	Z
c= 0.2 mol/L, 2-MOE	1.04	4.05	34.4	6.59
c= 0.2 mol/L, 2-MOE+EG	1.07	6.90	38.1	4.14
c= 0.4 mol/L, 2-MOE+EG	1.10	8.44	39.1	3.48

DownLoad: CSV

成膜方式	μ_sat/(cm²·V^–1·s^–1)	V_TH/V	S.S/(V·dec^–1)	I_on/I_off	关态电流/A	文献
喷墨打印	4.63	–1.44	0.18	>10⁷	<10^–12	[8]
喷墨打印	1.3	0.14	0.44	2.3×104	<10^–9	[10]
喷墨打印	4.6	0.9	—	>10⁵	1×10^–10	[28]
喷墨打印	3.0	–0.51	0.21	1.59×10⁷	5×10^–13	[29]
磁控溅射	13.6	1.04	0.18	5.65×10⁶	2×10^–12	[30]
喷墨打印	16.6	0.84	0.24	1.21×10⁹	≤10^–13	本文

DownLoad: CSV

	μ/(cm²·V^–1·s^–1)	V_TH/V	S.S/(mV·dec^–1)
Average value	11±2	0.6±0.15	90±15

DownLoad: CSV

W/L	μ_sat/ (cm²·V^–1·s^–1)	V_TH/ V	S.S/(V·dec^–1)	I_on/I_off
50/30	16.6	0.84	0.24	1.21×10⁹
50/20	14.9	0.73	0.15	2.79×10⁹
50/10	11.5	0.57	0.10	3.74×10⁹

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

[1]	Zhang Xue, Kim Bokyung, Lee Hyeonju, Park Jaehoon.Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology. Acta Physica Sinica, 2024, 73(9): 096802.doi:10.7498/aps.73.20240082
[2]	Song Jia-Ning, Mao Yu, Wang Jun-Jie, Li Dan-Yang, Ou Jia-Qi, Peng Jun-Biao.Study on ZnO quantum dot ligands for inkjet printing of light-emitting diodes. Acta Physica Sinica, 2023, 72(13): 137301.doi:10.7498/aps.72.20230312
[3]	Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao.Effect of N₂O treatment on performance of back channel etched metal oxide thin film transistors. Acta Physica Sinica, 2022, 71(5): 058503.doi:10.7498/aps.71.20211350
[4]	Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao.Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica, 2021, 70(16): 168501.doi:10.7498/aps.70.20210368
[5]	Liu Xian-Zhe, Zhang Xu, Tao Hong, Huang Jian-Lang, Huang Jiang-Xia, Chen Yi-Tao, Yuan Wei-Jian, Yao Ri-Hui, Ning Hong-Long, Peng Jun-Biao.Research progress of tin oxide-based thin films and thin-film transistors prepared by sol-gel method. Acta Physica Sinica, 2020, 69(22): 228102.doi:10.7498/aps.69.20200653
[6]	Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen.Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica, 2018, 67(4): 047302.doi:10.7498/aps.67.20172325
[7]	Shao Yan, Ding Shi-Jin.Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. Acta Physica Sinica, 2018, 67(9): 098502.doi:10.7498/aps.67.20180074
[8]	Lan Lin-Feng, Zhang Peng, Peng Jun-Biao.Research progress on oxide-based thin film transisitors. Acta Physica Sinica, 2016, 65(12): 128504.doi:10.7498/aps.65.128504
[9]	Wang Jing, Liu Yuan, Liu Yu-Rong, Wu Wei-Jing, Luo Xin-Yue, Liu Kai, Li Bin, En Yun-Fei.Extraction of density of localized states in indium zinc oxide thin film transistor. Acta Physica Sinica, 2016, 65(12): 128501.doi:10.7498/aps.65.128501
[10]	Ning Hong-Long, Hu Shi-Ben, Zhu Feng, Yao Ri-Hui, Xu Miao, Zou Jian-Hua, Tao Hong, Xu Rui-Xia, Xu Hua, Wang Lei, Lan Lin-Feng, Peng Jun-Biao.Improved performance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electrode. Acta Physica Sinica, 2015, 64(12): 126103.doi:10.7498/aps.64.126103
[11]	Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502
[12]	Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong.Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica, 2014, 63(9): 098503.doi:10.7498/aps.63.098503
[13]	Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501
[14]	Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101.doi:10.7498/aps.62.018101
[15]	Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin.The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica, 2013, 62(7): 077302.doi:10.7498/aps.62.077302
[16]	Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104
[17]	Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303
[18]	Zhao Kong-Sheng, Xuan Rui-Jie, Han Xiao, Zhang Geng-Ming.Junctionless low-voltage thin-film transistors based on indium-tin-oxide. Acta Physica Sinica, 2012, 61(19): 197201.doi:10.7498/aps.61.197201
[19]	Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305
[20]	Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018

Catalog

Vol. 73, Issue 12 - 2024-06-20

Metrics

Abstract views:1053
PDF Downloads:86
Cited By:0

Search

Article