UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga ₂O ₃) plays an extremely important role in detecting deep ultraviolet. It can form a typical type-II heterostructure with GaSe, promoting carrier separation and transport. In this work, Ga ₂O ₃epitaxial films are grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). The GaSe films and GaSe/ β-Ga ₂O ₃heterojunction photodetectors are grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. The UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. At very small light intensities, the responsivity and detection can reach 1.49 mA/W and 6.65 × 10 ¹¹Jones, respectively. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-powered supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity. The device can respond quickly, whether it is irradiated with different light intensities under constant voltage, or with different voltages under constant light intensity. It can respond within milliseconds under a bias voltage of 10 V. This work demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodetectors, and provides a possibility for detecting the deep ultraviolet of gallium oxide.