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Abstract

The AlGaAs photocathode can be used in the field of underwater optical communication because of its fast response speed and adjustable spectral response range. In order to solve the problem that the low light absorption of the AlGaAs emission layer limits the improvement of its quantum efficiency, the distributed Bragg reflector (DBR) structure is used to reflect the light at a specific wavelength back to the emission layer to further increase the absorption rate, thus improving the response capability of the photocathode at 532 nm. The spectral response model of the AlGaAs photocathode with DBR structure is obtained by solving one-dimensional continuity equation. The optical model of the is established by the finite-difference time-domain method. The effects of the sublayer periodic pairs, the sublayer material and the thickness of emission layer and buffer layer on the absorption rate of emission layer are analyzed. The light absorption distributions of AlGaAs photocathode with and without DBR structure are compared, and the influence mechanism of DBR structure on the blue-green light absorption capacity of AlGaAs photocathode emission layer is clarified, which can provide a theoretical basis for designing its structural parameters. The results show that the DBR structure with a periodic pair of 20 and Al _0.7Ga _0.3As/AlAs has the best reflection effect on 532 nm light. Based on the DBR structure, when the thickness of the emission layer and buffer layer are 495 nm and 50 nm, respectively, the emission layer has the best absorption rate of 532 nm light. Furthermore, two kinds of AlGaAs photocathodes with and without DBR structure are prepared by the metal-organic chemical vapor deposition technology, and the reflectivity and profile structure of the grown samples are characterized. Then the Cs/O activation experiments are performed to compare the spectral response curves. It is found that the spectral response of the AlGaAs photocathode sample with DBR structure at 532 nm wavelength is about twice that of the sample without DBR structure.

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Authors and contacts

Corresponding author:Zhang Yi-Jun,zhangyijun423@njust.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 62271259, U2141239 ), the Science and Technology on Low-Light-Level Night Vision Laboratory Foundation of China (Grant No. J20220102), and the Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant No. KYCX23_0431) .

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材料	结构A		结构B
材料	设计值/nm	实际值/nm	设计值/nm	实际值/nm
Al_0.63Ga_0.37As发射层	495	500	495	522
Al_0.8Ga_0.2As缓冲层	50	60	50	60
DBR层Al_0.7Ga_0.3As子层	36	34.9	—	—
DBR层AlAs子层	41	38.8	—	—

DownLoad: CSV

	结构A	结构B	描述
P₀	0.36	0.25	表面电子逸出概率
K	0.2	0.6	表面势垒因子
S_v/(cm·s^–1)	4×10⁴	1×10⁵	后界面电子复合速率

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Vol. 73, Issue 11 - 2024-06-05

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