- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Indium oxide (In ₂O ₃) thin films and thin-film transistors (TFTs) based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature (200 ℃) for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In ₂O ₃thin films are investigated, and they are compared with those of conventional thermal annealing (300 ℃, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In ₂O ₃thin film and the performance of TFT in a short period. The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In ₂O ₃film is denser and flatter than that of the conventional thermally annealed film, and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In ₂O ₃film. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In ₂O ₃TFTs is investigated in a comparative way. The results show that the electrical characteristics of the device are significantly improved: the subthreshold swing decreases to 0.12 mV/dec, the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×10 ⁷, and the field effect mobility is enhanced to 1.27 cm ²·V ^–1·s ^–1. Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performances of In ₂O ₃thin film and TFTs, even under low-temperature conditions.

Keywords:

Authors and contacts

Corresponding author:Zhang Xue,skd996027@sdust.edu.cn; Park Jaehoon,jaypark@hallym.ac.kr

Funds:Project supported by the Young Scientist Exchange Program China-Korea (Grant No. [2021]5).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]

Cited By

DownLoad: Full-Size Img PowerPoint

样品	亚阈值摆幅	电流比	阈值电压	迁移率
样品	S.S./(mV·dec^–1)	I_on/I_off	V_TH/V	μ_sat/(cm²·V^–1·s^–1)
样品1 (T.A.)	0.17	1.88×10⁶	7.6	0.22
样品2 (Pulsed UV +T.A.-5 min)	0.12	1.29×10⁷	7.4	1.27
样品3 (Pulsed UV +T.A.-10 min)		—	-2.52	2.43

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]

[1]	Zhao Ze-Xian, Xu Meng, Peng Cong, Zhang Han, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng.Inkjet printing high mobility indium-zinc-tin oxide thin film transistor. Acta Physica Sinica, 2024, 73(12): 128501.doi:10.7498/aps.73.20240361
[2]	Kuang Dan, Xu Shuang, Shi Da-Wei, Guo Jian, Yu Zhi-Nong.High performance amorphous Ga₂O₃thin film solar blind ultraviolet photodetectors decorated with Al nanoparticles. Acta Physica Sinica, 2023, 72(3): 038501.doi:10.7498/aps.72.20221476
[3]	Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao.Effect of N₂O treatment on performance of back channel etched metal oxide thin film transistors. Acta Physica Sinica, 2022, 71(5): 058503.doi:10.7498/aps.71.20211350
[4]	Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao.Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica, 2021, 70(16): 168501.doi:10.7498/aps.70.20210368
[5]	Liu Xian-Zhe, Zhang Xu, Tao Hong, Huang Jian-Lang, Huang Jiang-Xia, Chen Yi-Tao, Yuan Wei-Jian, Yao Ri-Hui, Ning Hong-Long, Peng Jun-Biao.Research progress of tin oxide-based thin films and thin-film transistors prepared by sol-gel method. Acta Physica Sinica, 2020, 69(22): 228102.doi:10.7498/aps.69.20200653
[6]	Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen.Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica, 2018, 67(4): 047302.doi:10.7498/aps.67.20172325
[7]	Shao Yan, Ding Shi-Jin.Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. Acta Physica Sinica, 2018, 67(9): 098502.doi:10.7498/aps.67.20180074
[8]	Lan Lin-Feng, Zhang Peng, Peng Jun-Biao.Research progress on oxide-based thin film transisitors. Acta Physica Sinica, 2016, 65(12): 128504.doi:10.7498/aps.65.128504
[9]	Wang Jing, Liu Yuan, Liu Yu-Rong, Wu Wei-Jing, Luo Xin-Yue, Liu Kai, Li Bin, En Yun-Fei.Extraction of density of localized states in indium zinc oxide thin film transistor. Acta Physica Sinica, 2016, 65(12): 128501.doi:10.7498/aps.65.128501
[10]	Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei.Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin film. Acta Physica Sinica, 2016, 65(12): 128502.doi:10.7498/aps.65.128502
[11]	Ning Hong-Long, Hu Shi-Ben, Zhu Feng, Yao Ri-Hui, Xu Miao, Zou Jian-Hua, Tao Hong, Xu Rui-Xia, Xu Hua, Wang Lei, Lan Lin-Feng, Peng Jun-Biao.Improved performance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electrode. Acta Physica Sinica, 2015, 64(12): 126103.doi:10.7498/aps.64.126103
[12]	Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502
[13]	Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong.Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica, 2014, 63(9): 098503.doi:10.7498/aps.63.098503
[14]	Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501
[15]	Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin.The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica, 2013, 62(7): 077302.doi:10.7498/aps.62.077302
[16]	Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101.doi:10.7498/aps.62.018101
[17]	Zhao Kong-Sheng, Xuan Rui-Jie, Han Xiao, Zhang Geng-Ming.Junctionless low-voltage thin-film transistors based on indium-tin-oxide. Acta Physica Sinica, 2012, 61(19): 197201.doi:10.7498/aps.61.197201
[18]	Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305
[19]	Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560
[20]	Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Liu Bin, Zhu Shun-Ming, Zhao Hong, Pu Lin, Han Ping, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.The oxidation characteristics of InN films. Acta Physica Sinica, 2007, 56(2): 1032-1035.doi:10.7498/aps.56.1032

Catalog

Vol. 73, Issue 9 - 2024-05-05

Metrics

Abstract views:1229
PDF Downloads:34
Cited By:0

Search

Article