Solution method is an important means of fabricating optoelectronic devices. During the thin film sample preparation, organic or inorganic perovskite semiconductor material usually needs to be finished in a glove box. However, most of the traditional experimental characterizations under the air environment, it is hard to reflect the reality of the structure and performance between film and device, therefore it is urgently needed to solve the microstructure evolutions of these semiconductor films based on in situreal-time representation technique. In this work, we report a synchrotron-based grazing incidence wide and small-angle scattering (GIWAXS and GISAXS) in situreal-time observation technique combined with a mini glove box, thereby realizing the standard glove box environment (H ₂O, O ₂content all reached below 1×10 ^–6) under remote control film spin coating or slot-die preparation and various sample post-processing. Meanwhile, this technique can real-time monitor the microstructure and morphology evolution of semiconductor film during fabrication. Based on the in situdevice and GIWAXS, SnO ₂ETL interface induced perovskite growth crystallization process shows that CQDs additive can result in three-dimensional perovskite, with the random orientation growth changing into highly ordered vertical orientation, meanwhile can effectively restrain the low-dimensional perovskite domain formation, helping to reveal the film microstructure transformation of inner driving force and providing the perovskite device preparation process optimized with experimental and theoretical basis. The conversion efficiency of large-area fully flexible three-dimensional perovskite thin film solar cells prepared by the roll-to-roll total solution slit coating method is increased to 5.23% (the area of a single device is ~15 cm ²). Therefore, using the in situsynchrotron-based glove box device, the microstructure evolution and the associated device preparation conditions of perovskite and organic semiconductor thin films can be controlled, and the thin film growth interface characteristics and film quality can be further controlled, which is the key technology to control the optimization process conditions of semiconductor thin films and devices.