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Abstract

The Wely semimetal WTe ₂exhibits significant spin-orbit coupling characteristics and can generate unconventional spin current with out-of-plane polarization, which has become a hotspot in recent years. Meanwhile, WTe ₂also has high charge-spin conversion efficiency, allowing perpendicular magnetization to be switched deterministically without the assistance of an external magnetic field, which is critical for the high-density integration of low-power magnetic random-access memories. The purpose of this paper is to review the recent advances in the research on spin orbit torque in heterostructures composed of WTe ₂and ferromagnetic layers, focusing on progress of research on the detection and magnetization switching in the spin orbit torque of heterojunctions composed of WTe ₂prepared by different methods (e.g. mechanical exfoliation and chemical vapor deposition) and ferromagnetic layers such as conventional magnets (e.g, FeNi and CoFeB, etc.) and two-dimensional magnets (e.g. Fe ₃GeTe ₂, etc.). Finally, the prospect of related research is discussed.

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Authors and contacts

Corresponding author:Pu Yong,yongpu@njupt.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 52001169, 61874060, U1932159, 61911530220) and the Introduction Talent Research Launch Fund of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY219164, NY217118).

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制备方法	铁磁层材料	表征方法	测试温度/K	自旋霍尔电导率 $ / {10^3}~({\hbar /{2{{e}}}}) {(\Omega {\cdot} {\text{m}})^{ - 1}} $	文献
Exfoliation	Py	ST-FMR	300	σ_S= 8 ± 2 σ_A= 9 ± 3 σ_B= 3.6 ± 0.8	[38]
	Py	SHH/ST-FMR	300	σ_S,σ_T,σ_A,σ_Bobserved	[32]
	Py	ST-FMR/SHH	300	σ_S,σ_A,σ_Bobserved	[45]
	Fe_2.78GeTe₂	AHE loop shift	150—190	σ_Bobserved	[39]
	Fe₃GeTe₂	Current-driven MS	110—135	σ_Bobserved	[40]
	Fe₃GeTe₂	AHE loop shift	120	σ_Bobserved	[41]
	SrRuO₃	AHE loop shift	40	σ_Bobserved	[43]
	CoTb	SHH	300	σ_S,σ_Tobserved	[46]
CVD	FeNi	ST-FMR	300	σ_OP= 1.76 σ_IP= 7.36	[47]
CVD	CoFeB	AHE loop shift/SHH	300	σ_OP= 2.05 ± 0.39 σ_IP= 3.58 ± 0.12	[42]
注:σ_S,σ_T,σ_B和σ_A分别表示面内类阻尼SOT、面内类场SOT、面外类阻尼SOT和面外类场SOT相关的自旋霍尔电导率;σ_OP和σ_IP分别表示面外和面内自旋霍尔电导率; ST-FMR, SHH, AHE loop shift和Current-driven MS分别表示自旋力矩-铁磁共振、二次谐波测量技术、反常霍尔效应回线偏移和电流驱动的磁化开关测试测试方法; CVD表示化学气相沉积.

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