SnS2/In2O3 based gas sensors and its high performance of detecting NO2 at room temperature

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Abstract

NO ₂is a toxic gas that can react with other organic compounds in the air, causing air pollution and posing a significant harm to human health. Therefore, a gas sensor that can detect NO ₂is needed. However, conventional NO ₂gas sensors are difficult to operate at room temperature (25 ℃). In this work, NO ₂gas sensing based on SnS ₂/In ₂O ₃, which can operate at room temperature (25 ℃), is reported. In ₂O ₃quantum dots and SnS ₂nanosheets are prepared by the hot-injection method and hydrothermal method. By using the unique two-dimensional structure of SnS ₂, In ₂O ₃is decorated on it, and the composite enhances its sensing performance. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and X-ray photoelectron spectroscopy (XPS). The results demonstrate that the composites prepared by 52% In ₂O ₃exhibit the best sensing response. The fabricated sensor shows a response range from 26.6 to NO ₂of 1×10 ^–6in volume fraction, fast response and short recovery time at room temperature (25 ℃). Moreover, this sensor demonstrates excellent reproducibility and selectivity. The heterojunction structure increases the number of active sites and accelerates the gas transport, which promotes charge transfer and gas desorption to improve NO ₂gas sensing performance. This excellent sensing performance has a great application prospect in NO ₂detection.

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Corresponding author:Tao Ran,ran.tao@szu.edu.cn; Luo Jing-Ting,luojt@szu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 12104320), the National Key Research and Development Program of China (Grant No. 2021YFF0603704), the Research Project in Fundamental and Application Fields of Guangdong Province, China (Grant Nos. 2020A1515110561, 2019A1515111199), the Research and Development Program of Guangdong Province, China (Grant No. 2020B0101040002), the Key Research Program of Education Department for Guangdong Province, China (Grant No. 2020ZDZX2007), the Shenzhen Science & Technology Project, China (Grant Nos. RCBS20200714114918249, GJHZ20200731095803010, JCYJ20220818095611025, JSGG20201103090801005), and the Start-up Research Foundation of Shenzhen University, China (Grant No. QNJS0352).

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Material	Temp./℃	NO₂concentration/×10^–6	Response	Response/recovery time/s	Ref.
SnS₂-nanosheets	250	10	2.49	6/40	[20]
SnO₂/SnS₂	80	1	1.8	159/297	[12]
Monolayer MoS₂	25	1.2	1.06	>1800	[21]
In₂O₃microspheres	250	20	37	5/20	[22]
In₂O₃thin films	200	5	10	—/—	[23]
In₂O₃nanocubes	50	3	10	21/522	[17]
SnS₂/In₂O₃	25	1	26.6	146/243	This work

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Vol. 73, Issue 10 - 2024-05-20

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