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Abstract

The scheme of generating optical frequency comb (OFC) mainly includes mode-locked laser, electro-optic modulation comb, and nonlinear Kerr micro-resonator comb. The OFC with frequency spacing on the order of 10–200 GHz can be employed in optical communication, microwave photonics, and other fields. Silicon carbide (SiC) has aroused the considerable research interest in integrated nonlinear photonics owing to its high second nonlinear coefficient and third order nonlinear coefficient, low optical loss, without multiphoton absorption loss owing to the wide bandgap. Single soliton microcomb in anomalous group velocity dispersion regime based on a 4H-SiC-on-insulator thin film has been demonstrated with the relative lower pump to comb efficiency, while the OFC in normal dispersion regime based on the SiC microresonator has not been reported. The pump conversion efficiency of OFC in the normal dispersion regime is high, and the pump frequency detuning range for the OFC generation is large, which is conducive to the OFC generation and long-term stable operation. Since there is no modulation instability effect in normal dispersion regime, the key to generating the OFC in normal dispersion regime is that the initial state needs the assistance of a multi-frequency laser (or four-wave mixing sideband). The phase-locked dual-frequency laser can be regarded as a pulse pump laser source with wide pulse duration, which can be realized by integrated distributed feedback laser. In this paper, a scheme of generating OFC by pumping the normal dispersion SiC microresonator with phase locked dual-frequency laser is proposed. The flat normal dispersion in 1550 nm band is realized through dispersion engineering of the SiC microresonator. The effective mode field area of the TE ₀fundamental mode at 1550 nm in the optimized SiC ridge waveguide is about 0.94 μm ², and the nonlinear coefficient is about 3.69 $ {{\mathrm{W}}}^{-1}{\cdot} {{\mathrm{m}}}^{-1} $ . Meanwhile, dispersion parameters of the microresonator with 100 GHz FSR are also obtained. The OFC generation pumped by a phase-locked dual-frequency laser based on normal dispersion SiC microresonator is simulated through using the Lugiato-Lefever equation. The evolution process of the OFC in time and frequency domain related to the pump detuning is studied. The effects of several parameters such as the pump power, microresonator waveguide loss, microresonator dispersion, proportion of the dual-frequency laser, and the frequency interval of dual-frequency laser on the performance of the OFC are also investigated. The conclusions can be obtained through the OFC generation simulation as follows, 1) When the microresonator waveguide loss is larger, the pump detuning range for the OFC generation becomes smaller, and the pulse peak power under the same pulse intensity filling rate decreases. 2) When the input pump power is larger, the pump detuning range for the OFC generation becomes larger, the pulse peak power under the same pulse intensity filling rate increases, and the corresponding spectrum becomes wider. 3) With the increase of absolute dispersion value, the spectrum bandwidth of the generated OFC decreases obviously. 4) The power proportion of dual-frequency laser has little influence on the OFC generation. 5) The frequency spacing of the generated OFC can be tuned through changing the frequency spacing of the two phase-locked lasers with integral multiple of free spectral range. The OFC with spectrum bandwidth of about 70 nm can be generated in a range of 1500—1600 nm through the simulation. The simulation results are beneficial to promoting the research and practical application of high repetition rate broadband optical frequency comb in a 1550 nm band based on the normal dispersion silicon carbide microresonator.

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Corresponding author:Feng Su-Chun,schfeng@bjtu.edu.cn

Funds:Project supported by the Fundamental Research Funds for Central Universities, China (Grant No. 2021JBM002) and the National Natural Science Foundation of China (Grant Nos. 62275012, 62335001).

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Waveguide	Parameter
Waveguide	β₂/(ps²·km^–1)	β₃/(ps³·km^–1)	β₄/(ps⁴·km^–1)	P₀/W	α/(dB·m^–1)	$ {D}_{1}/2{\mathrm{\pi }} $/GHz	$ {D}_{2}/2{\mathrm{\pi }} $/MHz	$ {D}_{3}/2{\mathrm{\pi }} $/kHz
SiC waveguide	145.283	–0.18298	0.00209637	0.2	20	100	–0.993974	0.844218

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Vol. 73, Issue 3 - 2024-02-05

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