[1] |
Bai Wen-Qing, Yang Jiang-Tao, Yang Cui-Hong, Chen Yun-Yun.Interband optical conductivity in electromagnetic field modulated strained black phosphorene. Acta Physica Sinica, 2024, 73(13): 137803.doi:10.7498/aps.73.20240445 |
[2] |
Wei Xiang-Fei, He Rui, Zhang Gang, Liu Xiang-Yuan.Terahertz photoconductivity in InAs/GaSb based quantum well system. Acta Physica Sinica, 2018, 67(18): 187301.doi:10.7498/aps.67.20180769 |
[3] |
Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong.Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica, 2017, 66(8): 087801.doi:10.7498/aps.66.087801 |
[4] |
Wang Jian, Xie Zi-Li, Zhang Rong, Zhang Yun, Liu Bin, Chen Peng, Han Ping.Study on the photoluminescence properties of InN films. Acta Physica Sinica, 2013, 62(11): 117802.doi:10.7498/aps.62.117802 |
[5] |
Chen Xiao-Lan, Zhang Yun, Ran Qi-Yi.Photo-conductivity decay properties of Fe-doped congruent lithium niobate crystals. Acta Physica Sinica, 2013, 62(3): 037201.doi:10.7498/aps.62.037201 |
[6] |
Xu Jia, Dong Zhan-Min, Li Yi, Sun Jia-Lin, Sun Hong-San.Fabrication, temperature-conductance and photoconductance characteristics of the macroscopic-long Ag2S nanowire bundle. Acta Physica Sinica, 2011, 60(7): 077304.doi:10.7498/aps.60.077304 |
[7] |
Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu, Lu Yun.Interface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2010, 59(11): 7986-7990.doi:10.7498/aps.59.7986 |
[8] |
Gao Li, Zhang Jian-Min.Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica, 2010, 59(2): 1263-1267.doi:10.7498/aps.59.1263 |
[9] |
Li Su-Mei, Song Shu-Mei, Lü Ying-Bo, Wang Ai-Fang, Wu Ai-Ling, Zheng Wei-Min.Photoluminescence study of quantum confined acceptors. Acta Physica Sinica, 2009, 58(7): 4936-4940.doi:10.7498/aps.58.4936 |
[10] |
Li Long-Long, Xu Wen, Zeng Zhi.Formalism of the transfer matrix and its application to Ⅲ/Ⅴ semicondutor quantum well systems. Acta Physica Sinica, 2009, 58(13): 266-S271.doi:10.7498/aps.58.266 |
[11] |
Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
[12] |
Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
[13] |
Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan.Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica, 2004, 53(1): 204-209.doi:10.7498/aps.53.204 |
[14] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
[15] |
Shao Jun.Optimal photoluminescence spectrum from Ti-doped ZnTe. Acta Physica Sinica, 2003, 52(7): 1743-1747.doi:10.7498/aps.52.1743 |
[16] |
Zhang Shi-Bin, Kong Guang-Lin, Xu Yan-Yue, Wang Yong-Qian, Diao Hong-Wei, Liao Xian-Bo.. Acta Physica Sinica, 2002, 51(1): 111-114.doi:10.7498/aps.51.111 |
[17] |
ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
[18] |
YUAN XIAN-ZHANG, PEI HUI-YUAN, LU WEI, LI NING, SHI GUO-LIANG, FANG JIA-XIONG, SHEN XUE-CHU.INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te. Acta Physica Sinica, 2001, 50(4): 775-778.doi:10.7498/aps.50.775 |
[19] |
ZHU CHUAN-GANG, XU PENG-SHOU, LU ER-DONG, XU FA-QIANG, PAN HAI-BIN.INFLUENCE OF CH3CSNH2 PASSIVATION ON INTERFACE DIFFUSION BETWEEN FERROMAGNETIC METALS AND GaAs. Acta Physica Sinica, 2001, 50(11): 2212-2216.doi:10.7498/aps.50.2212 |
[20] |
LIANG ER-JUN, CHAO MING-JU.LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica, 2001, 50(11): 2241-2246.doi:10.7498/aps.50.2241 |