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Kuang Dan, Xu Shuang, Shi Da-Wei, Guo Jian, Yu Zhi-Nong.High performance amorphous Ga2O3thin film solar blind ultraviolet photodetectors decorated with Al nanoparticles. Acta Physica Sinica, 2023, 72(3): 038501.doi:10.7498/aps.72.20221476 |
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Liao Qing, Li Bing-Sheng, Ge Fang-Fang, Zhang Hong-Peng, Shen Tie-Long, Mao Xue-Li, Wang Ren-Da, Sheng Yan-Bin, Chang Hai-Long, Wang Zhi-Guang, Xu Shuai, Chen Li-Ming, He Xiao-Xun.Stability and corrosion behavior of AlOxcoating on T91 steel and SIMP steel in static liquid Pb-Bi eutectic at 600 ℃. Acta Physica Sinica, 2022, 71(15): 156103.doi:10.7498/aps.71.20220356 |
[3] |
Chen Dong-Yun, Gao Ming, Li Yong-Hua, Xu Fei, Zhao Lei, Ma Zhong-Quan.First principle study of formation mechanism of molybdenum-doped amorphous silica in MoO3/Si interface. Acta Physica Sinica, 2019, 68(10): 103101.doi:10.7498/aps.68.20190067 |
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Ding Cui, Liu Chong, Zhang Qing-Hua, Gong Guan-Ming, Wang Heng, Liu Xiao-Zhi, Meng Fan-Qi, Yang Hao-Hao, Wu Rui, Song Can-Li, Li Wei, He Ke, Ma Xu-Cun, Gu Lin, Wang Li-Li, Xue Qi-Kun.Interface enhanced superconductivity in monolayer FeSe film on oxide substrate. Acta Physica Sinica, 2018, 67(20): 207415.doi:10.7498/aps.67.20181681 |
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Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502 |
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Wang Ping, Guo Li-Xin, Yang Yin-Tang, Zhang Zhi-Yong.First-principles study on electronic structures of Al, N Co-doped ZnO nanotubes. Acta Physica Sinica, 2013, 62(5): 056105.doi:10.7498/aps.62.056105 |
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Liu Gui-Li, Li Yong.The electronic theory study on high-temperature oxidation mechanism of TiAl alloy. Acta Physica Sinica, 2012, 61(17): 177101.doi:10.7498/aps.61.177101 |
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Zhang Guo-ying, Li Dan, Liang Ting.Electronic structure and high-temperature oxidation behavior of Nb alloy. Acta Physica Sinica, 2010, 59(11): 8031-8036.doi:10.7498/aps.59.8031 |
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Liu Gui-Li.High temperature oxidation mechanism of Nb-Al alloys. Acta Physica Sinica, 2010, 59(1): 499-503.doi:10.7498/aps.59.499 |
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
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Jin Hui-Ming, Felix Adriana, Aroyave Majorri.Influence of yttrium ion-implantation on oxidation behavior of nickel and property of oxide scale at 900℃. Acta Physica Sinica, 2006, 55(11): 6157-6162.doi:10.7498/aps.55.6157 |
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Feng Yu-Qing, Hou Li-Na, Zhu Tao, Yao Shu-De, Zhan Wen-Shan.Thermal stability of the magnetic tunnel junctions with nano-oxide layers. Acta Physica Sinica, 2005, 54(9): 4340-4344.doi:10.7498/aps.54.4340 |
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Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong.Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica, 2005, 54(8): 3884-3888.doi:10.7498/aps.54.3884 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yao.. Acta Physica Sinica, 2002, 51(1): 163-166.doi:10.7498/aps.51.163 |
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LIU HONG-XIA, HAO YUE.STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(9): 1769-1773.doi:10.7498/aps.50.1769 |
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YAN HUI, MA LI-JUN, CHEN GUANG-HUA, S.P.WONG, W.K.MAN, R.W.M.KWOK.OXIDATION AT ENHANCED TEMPERATURES AND SURFACE CHARACTERIZATION OF METAL Sn THIN FILMS. Acta Physica Sinica, 1997, 46(8): 1658-1664.doi:10.7498/aps.46.1658 |
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WU JIAN, LU HUAl-XIAN, DU YOU-WEI, GAO XUE-KUI, WANG TING-XIANG.A STUDY ON THE MAGNETIC PROPERTIES OF SURFACE OXIDE LAYERS OF ULTRAFINE IRON PARTICLES. Acta Physica Sinica, 1988, 37(12): 2044-2047.doi:10.7498/aps.37.2044 |
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.ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica, 1965, 21(3): 496-502.doi:10.7498/aps.21.496 |
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.BY THE SPECTRUM LINE WIDTH METHODS TO ANALYZE LAYER AFTER LAYER THE ALUMINIZED STEEL. Acta Physica Sinica, 1959, 15(6): 305-310.doi:10.7498/aps.15.305 |