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Wang Ji-Guang, Li Long-Ling, Qiu Jia-Tu, Chen Xu-Min, Cao Dong-Xing.Tuning two-dimensional electron gas at LaAlO3/KNbO3interface by strain gradient. Acta Physica Sinica, 2023, 72(17): 176801.doi:10.7498/aps.72.20230573 |
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Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He.Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(15): 157303.doi:10.7498/aps.69.20200250 |
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Wan Fa-Qi, Ma Yan-Ping, Dong Dan-Dan, Ding Wan-Yu, Jiang Hong, Dong Chuang, He Jian-Xiong.Molecule-like structural units in silicate-glass-forming oxides. Acta Physica Sinica, 2020, 69(13): 136101.doi:10.7498/aps.69.20191892 |
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Cao Ya-Qing, Huang Huo-Lin, Sun Zhong-Hao, Li Fei-Yu, Bai Hong-Liang, Zhang Hui, Sun Nan, Yung C. Liang.Demonstration of wide-bandgap GaN-based heterojunction vertical Hall sensors for high-temperature magnetic field detection. Acta Physica Sinica, 2019, 68(15): 158502.doi:10.7498/aps.68.20190413 |
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Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074 |
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Liu Yi-Chun, Lin Ya, Wang Zhong-Qiang, Xu Hai-Yang.Oxide-based memristive neuromorphic synaptic devices. Acta Physica Sinica, 2019, 68(16): 168504.doi:10.7498/aps.68.20191262 |
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Li Qun, Chen Qian, Chong Jing.Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica, 2018, 67(2): 027303.doi:10.7498/aps.67.20171827 |
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong.Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica, 2014, 63(8): 080202.doi:10.7498/aps.63.080202 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou.Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica, 2013, 62(15): 150202.doi:10.7498/aps.62.150202 |
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Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao.Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica, 2012, 61(23): 237302.doi:10.7498/aps.61.237302 |
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Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117304.doi:10.7498/aps.60.117304 |
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
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Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
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Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica, 2007, 56(8): 4955-4959.doi:10.7498/aps.56.4955 |
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Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia.The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica, 2006, 55(5): 2498-2503.doi:10.7498/aps.55.2498 |
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Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
[18] |
Li Dong-Lin, Zeng Yi-Ping.Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica, 2006, 55(7): 3677-3682.doi:10.7498/aps.55.3677 |
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
[20] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO.STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica, 2000, 49(9): 1804-1808.doi:10.7498/aps.49.1804 |