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.Preface to the special topic: Novel physical properties of functional oxide thin films. Acta Physica Sinica, 2023, 72(9): 090101.doi:10.7498/aps.72.090101 |
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Zhao Shi-Ping, Zhang Xin, Liu Zhi-Hui, Wang Quan, Wang Hua-Lin, Jiang Wei-Wei, Liu Chao-Qian, Wang Nan, Liu Shi-Min, Cui Yun-Xian, Ma Yan-Ping, Ding Wan-Yu, Ju Dong-Ying.Influence of low-energy ammonia ion/group diffusion on electrical properties of indium tin oxide film. Acta Physica Sinica, 2020, 69(23): 236801.doi:10.7498/aps.69.20200860 |
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Liu Yi-Chun, Lin Ya, Wang Zhong-Qiang, Xu Hai-Yang.Oxide-based memristive neuromorphic synaptic devices. Acta Physica Sinica, 2019, 68(16): 168504.doi:10.7498/aps.68.20191262 |
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Wang Wen-Bin, Zhu Yin-Yan, Yin Li-Feng, Shen Jian.Quantum manipulation of electronic phase separation in complex oxides. Acta Physica Sinica, 2018, 67(22): 227502.doi:10.7498/aps.67.20182007 |
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Liu Hu-Lin, Wang Xing, Tian Jin-Shou, Sai Xiao-Feng, Wei Yong-Lin, Wen Wen-Long, Wang Jun-Feng, Xu Xiang-Yan, Wang Chao, Lu Yu, He Kai, Chen Ping, Xin Li-Wei.High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection. Acta Physica Sinica, 2018, 67(1): 014209.doi:10.7498/aps.67.20171729 |
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Ding Cui, Liu Chong, Zhang Qing-Hua, Gong Guan-Ming, Wang Heng, Liu Xiao-Zhi, Meng Fan-Qi, Yang Hao-Hao, Wu Rui, Song Can-Li, Li Wei, He Ke, Ma Xu-Cun, Gu Lin, Wang Li-Li, Xue Qi-Kun.Interface enhanced superconductivity in monolayer FeSe film on oxide substrate. Acta Physica Sinica, 2018, 67(20): 207415.doi:10.7498/aps.67.20181681 |
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Zhai Xiao-Fang, Yun Yu, Meng De-Chao, Cui Zhang-Zhang, Huang Hao-Liang, Wang Jian-Lin, Lu Ya-Lin.Research progress of multiferroicity in Bi-layered oxide single-crystalline thin films. Acta Physica Sinica, 2018, 67(15): 157702.doi:10.7498/aps.67.20181159 |
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Lan Lin-Feng, Zhang Peng, Peng Jun-Biao.Research progress on oxide-based thin film transisitors. Acta Physica Sinica, 2016, 65(12): 128504.doi:10.7498/aps.65.128504 |
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Wang Jing, Liu Yuan, Liu Yu-Rong, Wu Wei-Jing, Luo Xin-Yue, Liu Kai, Li Bin, En Yun-Fei.Extraction of density of localized states in indium zinc oxide thin film transistor. Acta Physica Sinica, 2016, 65(12): 128501.doi:10.7498/aps.65.128501 |
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Zhang Li-Rong, Ma Xue-Xue, Wang Chun-Fu, Li Guan-Ming, Xia Xing-Heng, Luo Dong-Xiang, Wu Wei-Jing, Xu Miao, Wang Lei, Peng Jun-Biao.High speed gate driver circuit basd on metal oxide thin film transistors. Acta Physica Sinica, 2016, 65(2): 028501.doi:10.7498/aps.65.028501 |
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Li Zhao-Guo, Meng Ling-Biao, Zhou Min-Jie, Diao Kai-Di, Yi Yong, Zhu Xiao-Li, Wu Wei-Dong, Zhang Ji-Cheng.Fabrication of self-standing binary Gabor zone plate and its single order diffraction. Acta Physica Sinica, 2016, 65(12): 124207.doi:10.7498/aps.65.124207 |
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Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501 |
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Feng Xue, Lu Bing-Wei, Wu Jian, Lin Yuan, Song Ji-Zhou, Song Guo-Feng, Huang Yong-Gang.Review on stretchable and flexible inorganic electronics. Acta Physica Sinica, 2014, 63(1): 014201.doi:10.7498/aps.63.014201 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Fu Xiao-Nan, Li Xin-Jian.Preparation, structural characterization and nitrogen adsorption properties of a self-supported nanostructured gold film. Acta Physica Sinica, 2005, 54(11): 5257-5261.doi:10.7498/aps.54.5257 |
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Chen Ying-Fei, Peng Wei, Li Jie, Chen Ke, Zhu Xiao-Hong, Wang Ping, Zeng Guang, Zheng Dong-Ning, Li Lin.In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction. Acta Physica Sinica, 2003, 52(10): 2601-2606.doi:10.7498/aps.52.2601 |
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WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN.TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica, 2000, 49(7): 1331-1334.doi:10.7498/aps.49.1331 |
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LIAN GUI-JUN, LI MEI-YA, KANG JIN-FENG, GUO JIAN-DONG, SUN YUN-FENG, XIONG GUANG-CHENG.EPITAXIAL GROWTH OF PEROVSKITE OXIDE THIN FILMS. Acta Physica Sinica, 1999, 48(10): 1917-1922.doi:10.7498/aps.48.1917 |
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KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG.DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN Ag AND Al/YBa_2Cu_3O_(7-x) CONTACT INTERFACE. Acta Physica Sinica, 1995, 44(11): 1831-1838.doi:10.7498/aps.44.1831 |