Strain-enhanced thermoelectric properties of Nb-doped SrTiO<sub>3</sub> thin films

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Abstract

The development of high-performance thermoelectric materials can help solve the energy crisis in the future. Thin-film thermoelectric materials can meet the requirement for flexibility of wearable devices while supplying electrical power to them. In this study, high-quality Nb-doped SrTiO ₃films (Nb:STO) with different thickness are prepared on SrTiO ₃(STO) and La _0.3Sr _0.7Al _0.65Ta _0.35O ₃(LSAT) substrates by pulsed laser deposition. The surface morphologies, crystal structures, and thermoelectric performances of the films are characterized. The results show that the thermoelectric performance of the strain-free film increase with thickness increasing. The power factor at room temperature increases by 187%. The Seebeck coefficient of the 144 nm-thick Nb:STO/LSAT sample with strain is greatly improved to $265.95\;{\text{μ}}{\rm{V}}/{\rm{K}}$ at room temperature, which is likely to be due to the strain induced changes in the energy band of the thin film. The improvement of the thermoelectric performances of Nb:STO thin films by strain engineering provides a new approach to improving the thermoelectric properties of oxide thin films.

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Corresponding author:Li Qian,qianli_mse@tsinghua.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309100) and the National Natural Science Foundation of China(Grant No. 52150092).

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Vol. 72, Issue 9 - 2023-05-05

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