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Abstract

In order to continue Moore’s law, the reduction of power consumption has received much attention. It is necessary to develop steep devices that can overcome the “Boltzmann tyranny” and solve the problem of high power consumption of integrated circuits. Negative capacitance field-effect transistors are one of the most promising candidates in numerous steep devices. Strain engineering has been widely studied as an effective means of regulating the properties of ferroelectric thin films. However, the influence of strain on the performance of negative capacitance field-effect transistor has not been clear so far. Therefore, in this work, an analytical model of double gate negative capacitance field-effect transistor (DG-NCFET) regulated by biaxial misfit strain is proposed. Using this model, we investigate the influences of ferroelectric layer thickness and biaxial misfit strain on electrical properties of PbZr _0.5Ti _0.5O ₃(PZT)-based and CuInP ₂S ₆(CIPS)-based negative capacitance field-effect transistors (NCFETs), respectively. The results show that for the negative capacitance field-effect transistor based on PbZr _0.5Ti _0.5O ₃, when the ferroelectric layer thickness is increased or the compression strain is applied, the subthreshold swing and conduction current are improved, but the tensile strain has the opposite effect. For the negative capacitance field-effect transistor based on CuInP ₂S ₆, its performance is improved when the thickness of the ferroelectric layer is increased or the tensile strain is applied, but the device lags behind under the compressive strain. It is found that the CIPS-based NCFET exhibits better performance than PZT-based NCFET at low gate voltages.

Keywords:

negative capacitance field effect transistors/
CuInP₂S₆/
PbZr_0.5Ti_0.5O₃/
misfit strain

Authors and contacts

Corresponding author:Bai Gang,baigang@njupt.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 51602159) and the Natural Science Foundation of Nanjing University of Posts and Telecommunications, China (Grant No. NY222128).

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	Coefficient	Value
PZT	a₁/(C^–2·m²·N)	1.33(T– 665.7)×10⁵
	a₁₁/(C^–4·m⁶·N)	4.764×10⁷
	a₁₁₁/(C^–4·m⁶·N)	1.336×10⁸
	s₁₁/(C^–6·m¹⁰·N)	10.5×10^–12
	s₁₂/(C^–6·m¹⁰·N)	–3.7×10^–12
	Q₁₂/(m⁴·C^–2)	–0.0460
CIPS	$ {\alpha }_{T}/$(C^–2·mJ·K^–1)	1.64067×10⁷
	T₀/K	292.67
	α/(C^–4·m⁵·J)	3.148×10¹²
	γ/(C^–6·m⁹·J)	–1.0776×10¹⁶
	δ/(C^–8·m¹³·J)	7.6318×10¹⁸
	Q₁₃/(C^–2·m⁴)	1.70136 – 0.00363T
	Q₂₃/(C^–2·m⁴)	1.13424 – 0.00242T
	Q₃₃/(C^–2·m⁴)	–5.622 + 0.0105T
	Z₁₃₃/(C^–2·m⁴)	–2059.65 + 0.8T
	Z₂₃₃/(C^–2·m⁴)	–1211.26 + 0.45T
	s₁₁/Pa^–1	1.510×10^–11
	s₁₂/Pa^–1	0.183×10^–11
结构参数	L_g/nm	1000
结构参数	W/nm	1000

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Vol. 72, Issue 6 - 2023-03-20

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