Research progress of perovskite/crystalline silicon tandem solar cells with efficiency of over 30%

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Abstract

Double junction tandem solar cells consisting of two absorbers with designed different band gaps show great advantage in breaking the Shockley-Queisser limit efficiency of single junction solar cell by differential absorption of sunlight in a wider range of wavelengths and reducing the thermal loss of photons. Owing to the advantages of adjustable band gap and low cost of perovskite cells, perovskite/crystalline silicon tandem solar cells have become a research hotspot in photovoltaics. We systematically review the latest research progress of perovskite/crystalline silicon tandem solar cells. Focusing on the structure of perovskite top cells, intermediate interconnection layers and crystalline silicon bottom cells, we summarize the design principles of high-efficiency tandem devices in optical and electrical aspects. We find that the optical and electrical engineering of each layer structure in perovskite/crystalline silicon tandem solar cells goes through the whole process of device preparation. We also summarize the challenges of limiting the further improvement of the efficiency of the perovskite/crystalline silicon tandem solar cells and the corresponding improvement measures, which covers the following respects: 1) Improving the balance between V _ocand J _scof the broadband perovskite cell through additive engineering and interface engineering; 2) improving the bandgap matching between the electrical layers and reducing the carrier transport barrier through adjusting the work function or conductivity of layers; 3) improving the photocurrent coupling between sub-cells and the photocurrent of tandem solar cells by using light engineering and conformal deposition technology of perovskite cells. At present, there have been many technologies to improve the stability of perovskite solar cells, such as additive engineering and interface engineering, but the problem has hardly been solved. Therefore, improving the stability of broadband gap perovskite solar cells to the level of crystalline silicon solar cells will become an important challenge to limit its large-scale application. In terms of efficiency, the mass production efficiency of perovskite/crystalline silicon tandem solar cells is far lower than that of the laboratory level. One of the reasons is that it is difficult to achieve low-cost and deposition of uniform large area perovskite solar cells. Therefore improving the stability of broadband gap perovskite solar cells and developing low-cost large-area perovskite deposition technology will become extremely critical. Finally we look forward to the next generation of higher efficient low-cost tandem solar cells. We believe that with the increasing demand for higher efficiency photovoltaic devices, the triple junction solar cells based on the perovskite/crystalline silicon stack structure will become the future photovoltaics.

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Corresponding author:Zhang Mei-Rong,zhangmeirong2022@gusulab.ac.cn; Zhou Da-Yong,zhoudayong2021@gusulab.ac.cn;

Funds:Project supported by the Special Fund for the “Dual Carbon” Science and Technology Innovation of Jiangsu Province, China (Industrial Prospect and Key Technology Research program) (Grant No. BE2022021) and the “Dual Carbon” Science and Technology Innovation of Suzhou, China (Grant No. ST202219).

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Device structure	Si cell	ICs	Perovskite	Bandgap	ETL	HTL	Area/	PCE/	J_sc/	V_oc/	FF/	Ref.
Device structure	Si cell	ICs	Perovskite	/eV	ETL	HTL	cm²	%	(mA·cm^–2)	V	%	Ref.
n-i-p	n-BSF	n⁺⁺/p⁺⁺a-Si:H	CH₃NH₃PbI₃	1.61	TiO₂	Spiro-OMeTAD	1	13.7	11.5	1.58	75	[9]
n-i-p	n- PERC	ITO	Cs_0.07Rb_0.03FA_0.765MA_0.135Pb-(I_0.85Br_0.15)₃	1.62	TiO₂	Spiro-OMeTAD	1	22.8	17.6	1.75	73.8	[26]
n-i-p	n-PERC	—	(FAPbI₃)_0.83(MAPbBr₃)_0.17	1.59	SnO₂	Spiro-OMeTAD	16	21.9	16.2	1.74	78	[27]
n-i-p	n-HJT	ITO	FA_0.5MA_0.38Cs_0.12PbI_2.04Br_0.96	1.69	SnO₂	Spiro-OMeTAD	0.06	22.2	16.5	1.655	81.1	[28]
n-i-p	n-HJT	n⁺/p⁺nc-Si:H	Cs_0.19FA_0.81Pb-(I_0.78Br_0.22)₃	1.63	C₆₀	Spiro-OMeTAD	0.25	22.7	16.8	1.751	77.1	[48]
n-i-p	n-PERC	—	CH₃NH₃PbI₃	—	SnO₂	Spiro-OMeTAD	16	15.6	15.5	1.659	61	[49]
p-i-n	HJT	n⁺/p⁺nc-Si:H	Cs_xFA_1–xPb(I Br)₃	—	C₆₀/SnO₂	Spiro-TTB	1.42	25.52	19.5	1.788	73.1	[42]
p-i-n	n-HJT	ITO	Cs_0.15(FA_0.83MA_0.17)_0.85Pb(I_0.7Br_0.3)₃	1.64	C₆₀/SnO₂	PTAA	0.49	25.4	17.8	1.8	19.4	[29]
p-i-n	p-BSF	ITO	(FAMAPbI₃)_0.8(MAPbBr₃)_0.2	1.64	PCBM	PTAA	0.27	21.02	16.13	1.645	79.23	[36]
p-i-n	HJT	InOx	Cs_0.05MA_0.15FA_0.8PbI_2.25Br_0.75	1.68	C₆₀/SnO_x	NiO_x	0.832	26	19.8	1.7	77	[37]
p-i-n	n-HJT	ITO	Cs_0.05(FA_0.83MA_0.17)_0.95Pb(I_1–xBr_x)₃	1.63	PC₆₁BM	F4-TCNQ doped polyTPD and NPD	1.088	25.3	19.02	1.793	74.3	[40]
p-i-n	HJT	ITO	Cs_0.25FA_0.75Pb(I_0.85Br_0.15)₃+MAPbCl₃	1.67	C₆₀/SnO	PolyTPD/NiO_x	1	27.13	19.12	1.886	75.3	[30]
p-i-n	n-HJT	ITO	Cs_0.05(FA_0.77MA_0.23)_0.95Pb(I_0.77Br_0.23)₃	1.68	C₆₀	Me-4PACz(SAM)	1.064	29.15	19.26	1.9	79.52	[35]
p-i-n	n-HJT	ITO	Cs_0.1MA_0.9Pb(I_0.9Br_0.1)₃	—	C₆₀/SnO₂	PTAA	0.049	26	19.2	1.82	74.4	[44]
p-i-n	n-HJT	n⁺/p⁺nc-Si:H	FA_0.9Cs_0.1PbI_2.87Br_0.13	1.63	C₆₀/SnO₂	Spiro-TTB	0.5091	27.48	19.78	1.88	76.85	[46]
p-i-n	n-TOPCon	ITO	Cs_0.22FA_0.78Pb(Cl_0.03Br_0.15I_0.85)₃	—	C₆₀/SnO₂	NiO_x	1	27.63	19.68	1.794	78.27	[41]

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Vol. 72, Issue 5 - 2023-03-05

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