Photoelectric modulation and resistive switching characteristic of ReSe<sub>2</sub>/WSe<sub>2</sub> memtransistor

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional transition metal sulfides have unique electronic structure and properties, and they are widely used in electronic devices, energy conversions, memories and other fields. In this work, a two-dimensional ReSe ₂/WSe ₂heterostructure memtransistor is prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10 ¹to 10 ⁵. Then, the resistance and on/off ratio of the memtransistor can be controlled by changing the light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in a range of 10 ²–10 ⁵by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9 × 10 ⁴s, the ReSe ₂/WSe ₂heterostructure memtransistor still maintains a switch ratio close to 10 ⁴, indicating the good stability and durability of the device. It demonstrates that the ReSe ₂/WSe ₂memtransistor will be one of potential candidates for the next- generation nonvolatile memory applications.

Keywords:

Authors and contacts

Corresponding author:Chen Feng-Xiang,phonixchen79@whut.edu.cn; Wang Li-Sheng,wang_lesson@whut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 51702245), the National Key Research and Development Program of China (Grant Nos. 2018YFE0111500, 2019YFA0704900), the Open Fund Project of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology), China (Grant No. 2021-KF-16), and the Fundamental Research Fund for the Central Universities, China (Grant No. WUT2021III065JC)

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]

Cited By

DownLoad: Full-Size Img PowerPoint

	栅压V_g/V
	0	1	10	20	25
HRS阻值/Ω	6.31 × 10¹¹	4.36 × 10¹¹	1.20 × 10¹⁰	8.75 × 10⁸	5.26 × 10⁸
LRS阻值/Ω	2.37 × 10⁶	4.31 × 10⁶	5.59 × 10⁶	9.66 × 10⁶	1.12 × 10⁷
开关比	2.66 × 10⁵	1.01 × 10⁵	2.14 × 10³	9.06 × 10¹	4.70 × 10¹

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]

[1]	Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang.Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302.doi:10.7498/aps.72.20230411
[2]	Zheng Jun, Ma Li, Li Chun-Lei, Yuan Rui-Yang, Guo Ya-Tao, Fu Xu-Ri.Optically controlled silicene and germanene transistors driven by spin-bias. Acta Physica Sinica, 2022, 71(19): 198502.doi:10.7498/aps.71.20221047
[3]	Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng.Research on the photoelectric modulation and resistive switching characteristic of ReSe₂/WSe₂memtransistor. Acta Physica Sinica, 2022, 0(0): .doi:10.7498/aps.7120221154
[4]	Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen.Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica, 2021, 70(15): 156101.doi:10.7498/aps.70.20210351
[5]	Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang.Resistive switching behavior and mechanism of multilayer MoS₂memtransistor under control of back gate bias and light illumination. Acta Physica Sinica, 2021, 70(21): 217302.doi:10.7498/aps.70.20210750
[6]	Chai Jin-Hua, Chen Fei.Methodology of filter-type multi-dithering phase control for quasi parallel light interference. Acta Physica Sinica, 2018, 67(1): 014202.doi:10.7498/aps.67.20171562
[7]	Zhou Wen, Ji Ke, Chen He-Ming.Parallel magneticcontrolled THz modulator based on two-dimensional magnetized plasma photonic crystal. Acta Physica Sinica, 2017, 66(5): 054210.doi:10.7498/aps.66.054210
[8]	Tian Wei, Wen Qi-Ye, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan, Zhang Huai-Wu.Optically tuned wideband terahertz wave amplitude modulator based on gold-doped silicon. Acta Physica Sinica, 2015, 64(2): 028401.doi:10.7498/aps.64.028401
[9]	Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke.The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101.doi:10.7498/aps.63.116101
[10]	Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong.Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectrics. Acta Physica Sinica, 2013, 62(11): 117305.doi:10.7498/aps.62.117305
[11]	Zhou Jian-Wei, Liang Jing-Qiu, Liang Zhong-Zhu, Tian Chao, Qin Yu-Xin, Wang Wei-Biao.Tunable two-dimensional photonic crystal cavity all-optical switching infiltrated with liquid-crystal. Acta Physica Sinica, 2013, 62(13): 134208.doi:10.7498/aps.62.134208
[12]	Li Fei, Xiao Liu, Liu Pu-Kun, Yi Hong-Xia, Wan Xiao-Sheng.A study on the cut-off amplification factor of the grid with film sphere and porous structure in grid- controlled electron gun. Acta Physica Sinica, 2012, 61(7): 078502.doi:10.7498/aps.61.078502
[13]	Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue.Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors. Acta Physica Sinica, 2012, 61(23): 236103.doi:10.7498/aps.61.236103
[14]	Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing.Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors. Acta Physica Sinica, 2012, 61(7): 076101.doi:10.7498/aps.61.076101
[15]	Guo Zhan, Fan Fei, Bai Jin-Jun, Niu Chao, Chang Sheng-Jiang.Magnetically tunable magnetic photonic crystal forterahertz switch and filter. Acta Physica Sinica, 2011, 60(7): 074218.doi:10.7498/aps.60.074218
[16]	Wang Yong-Jun, Wu Chong-Qing, Wang Zhi, Wang Ya-Ping, Xin Xiang-Jun.Signal impairment analysis of optical controlled apparatus caused by semiconductor optical amplifier. Acta Physica Sinica, 2010, 59(6): 4042-4049.doi:10.7498/aps.59.4042
[17]	Bi Hai-Xing, Zhou Yun-Song, Zhao Li-Ming, Wang Fu-He.Magnetron photonic switching circuit in photonic crystal. Acta Physica Sinica, 2008, 57(9): 5718-5721.doi:10.7498/aps.57.5718
[18]	Li Ya-Jie, Wu Chong-Qing, Wang Yong-Jun, Tang Qing-Shan.Performance analysis of control pulse in optical controlled apparatus based on semiconductor optical amplifier. Acta Physica Sinica, 2007, 56(2): 952-957.doi:10.7498/aps.56.952
[19]	Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong.Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure. Acta Physica Sinica, 2005, 54(7): 3363-3369.doi:10.7498/aps.54.3363
[20]	.. Acta Physica Sinica, 2002, 51(4): 882-888.doi:10.7498/aps.51.882

Catalog

Vol. 71, Issue 21 - 2022-11-05

Metrics

Abstract views:3317
PDF Downloads:95
Cited By:0

Search

Article