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Abstract

Metal halide perovskite has attracted much attention due to its adjustable color, high color purity, and excellent photoelectric properties. The quality of the perovskite film is one of the key factors that affect the performance of device. Here, PEA ₂Cs _n–1Pb _nBr _3n+1thin films are prepared by directly doping the ionic compound additive tetraphenylphosphine chloride (TPPCl) into the perovskite precursor of the light-emitting layer based on additive assisted technology. High-quality perovskite films with uniform, less pinholes and smaller grains are obtained. Not only is the photoluminescence (PL) performance of PeLEDs improved but the electroluminescence (EL) performance of PeLEDs with a double electron transport layer also turns better. The maximum brightness is 25285 cd/m ². The maximum current efficiency is 65.9 cd/A. And the maximum EQE is 17.3%. The method of adding ionic compounds to the perovskite precursor can not only improve the carrier transport behavior, but also make the formed small n crystal phases and large n crystal phase more balance, leading to the energy funnel effect to be enhanced. Further investigation by FTIR proves that the TPPCl can passivate the perovskite film, and thus greatly improving the EQE value of the PeLED. This researchpresents a simple and efficient method of developing high-performance quasi-two-dimensional green PeLEDs.

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Authors and contacts

Corresponding author:Gao Chun-Hong,gch0122@swu.edu.cn

Funds:Project supported by the Special Program for Talent Training in West China Funded by National Study Abroad Fund, China (Grant No. [2018]10006) and the Fundamental Research Funds for the Central Universities (Grant No. XDJK2018C082).

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Perovskite films	$ {\tau _1} $/ns	A₁	$ {\tau _2} $/ns	A₂	$ {\tau _3} $/ns	A₃	${\tau _{\rm ave} }$/ns
w/o TPPCl	1.441± 0.020	0.492± 0.001	0.422± 0.004	1.050± 0.001	7.109± 0.001	0.069± 0.001	1.020± 0.001
with TPPCl	4.677± 0.080	0.394± 0.001	1.027± 0.008	2.705± 0.001	25.007± 0.710	0.048± 0.001	1.849± 0.001

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TPPCl /(mg·mL^–1)^a	V_{turn on} /(V)^b	L_max /(cd·m^–2)^c	CE_max /(cd·A^–1)^d	EQE_max /%^e	FWHM /nm^f
0	3.8	6212	9.2	2.4	18
1	3.6	16502	32.9	8.7	18
2	3.2	25285	65.9	17.3	18
4	3.2	13785	42.4	11.2	18
注:^a钙钛矿薄膜中TPPCl的掺杂浓度;^b器件亮度为1 cd/m²时的开启电压;^c最大亮度;^d最大电流效率;^e最大外部量子效率;^f6 V电压下的半峰全宽.

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Vol. 71, Issue 20 - 2022-10-20

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