- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

BiSe is found to be a promising near-room-temperature thermoelectric material with higher performance than traditional Bi ₂Se ₃due to its ultra-low intrinsic lattice thermal conductivity. In this work, N-type BiSe nanocrystalline thin films with (00l) preferred orientation are first prepared via vacuum thermal evaporation method, and Bi _1–xSb _xSe nanocrystalline films with different doping concentrations are obtained by Sb co-evaporation. The phases, morphologies, chemical compositions and valences, lattical vibrations, and electrical properties of these films are characterized. It is found that the Sb dopant successfully enters into the crystal lattice and replaces the Bi site of Bi ₂Se ₃quintuple layers and Bi ₂bilayers without selectivity, and the difference of gold properties between Sb atom and Bi atoms leads the carrier concentration to sharply decrease and the Seebeck coefficient in doped BiSe to increase. Meanwhile, the sizes of nanocrystals in the films decrease and the denser layered structure is formed due to the Sb doping, which is conducive to the carrier transport in the samples, and the in-plane carrier mobility of the films effectively increases from 13.6 cm ²·V ^–1·s ^–1(BiSe) to 19.3 cm ²·V ^–1·s ^–1(Bi _0.65Sb _0.35Se). The maximum room-temperature power factor of 2.18 μW·cm ^–1·K ^–2is obtained in Bi _0.76Sb _0.24Se, which is higher than that in undoped BiSe. The results of this work indicate that the BiSe-based thin films have potential applications in room temperature thermoelectric thin film devices.

Keywords:

Authors and contacts

Corresponding author:Jian Ji-Kang,jianjikang@126.com

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 52072078, 51702058).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]

Cited By

DownLoad: Full-Size Img PowerPoint

样品	(Bi+Bi₂Se₃)蒸发源温度/℃	Sb蒸发源温度/℃	源与衬底的距离/cm	衬底温度/ ℃	蒸镀时间/ min
BiSe	500	—	10	475	10
Bi_0.85Sb_0.15Se	500	300	10	475	10
Bi_0.76Sb_0.24Se	500	350	10	475	10
Bi_0.65Sb_0.35Se	500	375	10	475	10

DownLoad: CSV

样品	Bi/%	Sb/%	Se/%
BiSe	49.97	—	50.03
Bi_0.85Sb_0.15Se	42.37	7.53	50.10
Bi_0.76Sb_0.24Se	38.01	11.91	50.08
Bi_0.65Sb_0.35Se	32.49	17.45	50.05

DownLoad: CSV

	BiSe	Bi_0.85Sb_0.15Se	Bi_0.76Sb_0.24Se	Bi_0.65Sb_0.35Se
$ \rm A^1_{1g} $	68.1	70.5	70.9	71.4
E_g	93.7	95.4	95.9	96.7
$ \rm E^2_g $	120.6	121.4	122.1	122.9
$\rm A^2_{1g}$	155.4	157.9	160.5	161.5

DownLoad: CSV

薄膜样品	载流子浓度 n/(10²⁰cm^–3)	载流子迁移率 μ/(cm²·V^–1·s^–1)	电导率 σ/(S·cm^–1)
BiSe	2.5	13.6	544.2
Bi_0.85Sb_0.15Se	1.9	16.7	502.3
Bi_0.76Sb_0.24Se	1.6	18.4	468.8
Bi_0.65Sb_0.35Se	1.3	19.3	416.8

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]

[1]	Li Rui-Ying, Luo Ting-Ting, Li Mao, Chen Shuo, Yan Yong-Gao, Wu Jin-Song, Su Xian-Li, Zhang Qing-Jie, Tang Xin-Feng.Defect structure regulation and thermoelectric transfer performance in n-type Bi_2–xSb_xTe_3–ySe_y-based compounds. Acta Physica Sinica, 2024, 73(9): 097101.doi:10.7498/aps.73.20240098
[2]	Li Qiang, Chen Shuo, Liu Ke-Ke, Lu Zhi-Qiang, Hu Qin, Feng Li-Ping, Zhang Qing-Jie, Wu Jin-Song, Su Xian-Li, Tang Xin-Feng.Donor-like effect and thermoelectric properties in n-type Bi₂Te₃-based compounds. Acta Physica Sinica, 2023, 72(9): 097101.doi:10.7498/aps.72.20230231
[3]	Chen Yun-Fei, Wei Feng, Wang He, Zhao Wei-Yun, Deng Yuan.Structural control for high performance Bi₂Te_3–xSe_xthermoelectric thin films. Acta Physica Sinica, 2021, 70(20): 207303.doi:10.7498/aps.70.20211090
[4]	Wang Jing-Li, Chen Zi-Yu, Chen He-Ming.Design of polarization-insensitive 1 × 2 multimode interference demultiplexer based on Si₃N₄/SiN_x/Si₃N₄sandwiched structure. Acta Physica Sinica, 2020, 69(5): 054206.doi:10.7498/aps.69.20191449
[5]	Zou Ping, Lü Dan, Xu Gui-Ying.Microstructure and thermoelectric property of (Bi_1–xTb_x)₂(Te_0.9Se_0.1)₃fabricated by high pressure sintering technique. Acta Physica Sinica, 2020, 69(5): 057201.doi:10.7498/aps.69.20191561
[6]	Pan Bei-Cheng, Shi Qing-Fan, Sun Gang.Inner structure of granular pile during its quasi-static avalanches and slow flows. Acta Physica Sinica, 2014, 63(1): 014703.doi:10.7498/aps.63.014703
[7]	Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103
[8]	Hu Xiao-Jun, Hu Heng, Chen Xiao-Hu, Xu Bei.The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2011, 60(6): 068101.doi:10.7498/aps.60.068101
[9]	Wang De-Yi, Gao Shu-Xia, Li Gang, Zhao Ming.The structure，optical and electrical properties of Li-N dual-acceptor doped p-type ZnO thin films prepared by sol-gel method. Acta Physica Sinica, 2010, 59(5): 3473-3480.doi:10.7498/aps.59.3473
[10]	Su Xian-Li, Tang Xin-Feng, Li Han.Effects of melt spinning process on microstructure and thermoelectric properties of n-type InSb compounds. Acta Physica Sinica, 2010, 59(4): 2860-2866.doi:10.7498/aps.59.2860
[11]	Zhou Long, Li Han, Su Xian-Li, Tang Xin-Feng.Effects of In doping on crystal structure and thermoelectric properties of n-type skutterudites. Acta Physica Sinica, 2010, 59(10): 7219-7224.doi:10.7498/aps.59.7219
[12]	Lu Peng, Hou Guo-Fu, Yuan Yu-Jie, Yang Rui-Xia, Zhao Ying.Influence of n-type layer structure on performance and light-induced degradation of n-i-p microcrystalline silicon solar cells. Acta Physica Sinica, 2010, 59(6): 4330-4336.doi:10.7498/aps.59.4330
[13]	Wang Shan-Yu, Xie Wen-Jie, Li Han, Tang Xin-Feng.Microstructures and thermoelectric properties of n-type melting spun(Bi0.85Sb0.15)2(Te1-xSex)3 compounds. Acta Physica Sinica, 2010, 59(12): 8927-8933.doi:10.7498/aps.59.8927
[14]	Dai Ming, Liao Yuan-Bao, Liu Dong, Gan Xin-Hui, Xu Ling, Ma Zhong-Yuan, Xu Jun, Chen Kun-Ji.Layer by layer growth of CdTe nanocrystal thin films and its photoluminescence. Acta Physica Sinica, 2009, 58(10): 7246-7249.doi:10.7498/aps.58.7246
[15]	Liu Qiang, Cheng Xin-Lu, Fan Yong-Heng, Yang Xiang-Dong.First-principles calculation of p-Zn1-xMgxO electronic structure by doping with Al and N. Acta Physica Sinica, 2009, 58(4): 2684-2691.doi:10.7498/aps.58.2684
[16]	Ji Zi-Wu, Mino Hirofumi, Kojima Eiji, Akimoto Ryoichi, Takeyama Shojiro.Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2008, 57(5): 3260-3266.doi:10.7498/aps.57.3260
[17]	Yuan Yu-Jie, Hou Guo-Fu, Xue Jun-Ming, Han Xiao-Yan, Liu Yun-Zhou, Yang Xing-Yun, Liu Li-Jie, Dong Pei, Zhao Ying, Geng Xin-Hua.The influence of n-layer on structural properties of i-layer in n-i-p μc-Si∶H thin film solar cells. Acta Physica Sinica, 2008, 57(6): 3892-3897.doi:10.7498/aps.57.3892
[18]	Su Xian-Li, Tang Xin-Feng, Li Han, Deng Shu-Kang.Structure and thermoelectric properties of n-type GaxCo4Sb12 skutterudite compounds. Acta Physica Sinica, 2008, 57(10): 6488-6493.doi:10.7498/aps.57.6488
[19]	Jiang Jun, Xu Gao-Jie, Cui Ping, Chen Li-Dong.Dependence of thermoelectric properties of n-type Bi2Te3-based sintered materials on the TeI4 doping content. Acta Physica Sinica, 2006, 55(9): 4849-4853.doi:10.7498/aps.55.4849
[20]	Lü Qiang, Rong Jian-Ying, Zhao Lei, Zhang Hong-Chen, Hu Jian-Min, Xin Jiang-Bo.Influence of process parameters on the electrical properties of n-type and p-type Bi2Te3-based pseudo-ternary thermoelectric materials by the hot-pressing method. Acta Physica Sinica, 2005, 54(7): 3321-3326.doi:10.7498/aps.54.3321

Catalog

Vol. 71, Issue 19 - 2022-10-05

Metrics

Abstract views:4233
PDF Downloads:167
Cited By:0

Search

Article