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Abstract

In order to prepare high-quantum-efficiency semiconductor Cs-Te photocathode which can produce a high-quality electron source, based on the INFN-LASA Cs-Te photocathode preparation method, the Cs-Te photocathode preparation method with Te intermittent, Cs continuous deposition is developed. The Cs-Te photocathode with quantum efficiency greater than 5% under 265 nm UV irradiation is successfully prepared in the photocathode preparation device of SINAP and SARI, and the fabrication success rate reaches 100%. As long as the preparation chamber vacuum degree is better than 10 ^–8Pa, the Cs-Te photocathode with high quantum efficiency can be prepared by this preparation method, which will not be different due to the changes of preparation equipment and operators.

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Authors and contacts

Corresponding author:Li Xu-Dong,lixudong@sari.ac.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11905276, 12075302), the Natural Science Foundation of Shanghai, China (Grant No. 22ZR1470300), and the Shanghai Municipal Science and Technology Major Project, China (Grant No. 2017SHZDZX02).

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Vol. 71, Issue 17 - 2022-09-05

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