Silicene is a kind of two-dimensional material composed of a honeycomb arrangement of silicon atoms. Compared with the structure of graphene, the buckled structure of silicene weakens the $\pi—\pi$ overlaps and turns the hybrid orbitals from $\rm sp^2$ to $\rm sp^3$ , which enhances the spin-orbit coupling strength but still preserves the Dirac cone near Kor K '. Owing to its buckled structure, silicene is susceptible to external parameters like electric field and substrate, which draws lots of attention both experimentally and theoretically. Recent progress of ferroelectricity in two-dimensional (2D) van der Waals materials found that the spontaneous ferroelectric polarization can be preserved even above room temperature, which inspires us to investigate how to tune the electric properties of silicene through the spontaneous polarization field of 2D ferroelectric substrate. ${\rm In_{2}}X_3$ ( X= Se,S,Te) Family recently were found to have single ferroelectric monolayers with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations, and the lattice mismatch between silicene and $\rm In_{2}S_3$ is negligible. Therefore, we investigate the stacking and electric properties of silicene and monolayer $\rm In_{2}S_3$ heterostructure by the first-principles calculations. The spontaneous polarization field of $\rm In_{2}S_3$ is calculated to be 1.26 $\rm μC {\cdot} cm^{-2}$ , comparable to the experimental results of $\rm In_{2}Se_3$ . We compare the different stacking order between silicene and $\rm In_{2}S_3$ . The calculated results shown that the ABstacking is the ground state stacking order, and the reversal of the ferroelectric polarization could tune the band structure of heterostructure. When the polarization direction of $\rm In_{2}S_3$ is upward, the layer distance between silicene and $\rm In_{2}S_3$ is 3.93 Å, the polarization field and substrate interaction together break the ABsublattice symmetry and induce a 1.8 meV band gap near the Dirac point of Kand K', while the Berry curvature around Kand K'have opposite signs, corresponding to valley Hall effect. When the polarization is downward, the layer distance decreases to 3.62 Å and the band gap around Kand K'both increase to 30.8 meV. At the same time a 0.04 echarge transfer makes some bands move across the Fermi energy, corresponding to metal state. Our results pave the way for studying the ferroelectric tuning silicene heterostructures and their potential applications in information industry.