[1] |
Duan Xiu-Ming, Yi Zhi-Jun.Theoretical study on regulatory mechanism of dielectric environmental screening effects on binding energy of two-dimensional InX(X= Se, Te) exciton. Acta Physica Sinica, 2023, 72(14): 147102.doi:10.7498/aps.72.20230528 |
[2] |
Wu Ze-Fei, Huang Mei-Zhen, Wang Ning.Nonlinear Hall effects in two-dimensional moiré superlattices. Acta Physica Sinica, 2023, 72(23): 237301.doi:10.7498/aps.72.20231324 |
[3] |
Chen Xiao-Juan, Xu Kang, Zhang Xiu, Liu Hai-Yun, Xiong Qi-Hua.Research progress of bulk photovoltaic effect in two-dimensional materials. Acta Physica Sinica, 2023, 72(23): 237201.doi:10.7498/aps.72.20231786 |
[4] |
Huang Xin-Yu, Han Xu, Chen Hui, Wu Xu, Liu Li-Wei, Ji Wei, Wang Ye-Liang, Huang Yuan.New progress and prospects of mechanical exfoliation technology of two-dimensional materials. Acta Physica Sinica, 2022, 71(10): 108201.doi:10.7498/aps.71.20220030 |
[5] |
Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue.Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Physica Sinica, 2020, 69(2): 028101.doi:10.7498/aps.69.20191013 |
[6] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102.doi:10.7498/aps.69.20200497 |
[7] |
Meng Xian-Cheng, Tian He, An Xia, Yuan Shuo, Fan Chao, Wang Meng-Jun, Zheng Hong-Xing.Field effect transistor photodetector based on two dimensional SnSe2. Acta Physica Sinica, 2020, 69(13): 137801.doi:10.7498/aps.69.20191960 |
[8] |
Meng Fan, Hu Jin-Hua, Wang Hui, Zou Ge-Yin, Cui Jian-Gong, Zhao Yue.Fluorescence enhancement of monolayer MoS2in plasmonic resonator. Acta Physica Sinica, 2019, 68(23): 237801.doi:10.7498/aps.68.20191121 |
[9] |
Liu Le, Tang Jian, Wang Qin-Qin, Shi Dong-Xia, Zhang Guang-Yu.Thermal stability of MoS2 encapsulated by graphene. Acta Physica Sinica, 2018, 67(22): 226501.doi:10.7498/aps.67.20181255 |
[10] |
Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei.Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica, 2018, 67(11): 118502.doi:10.7498/aps.67.20180129 |
[11] |
Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue.Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica, 2017, 66(20): 208101.doi:10.7498/aps.66.208101 |
[12] |
Zhang Li-Yong, Fang Liang, Peng Xiang-Yang.First-principles study on multiphase property and phase transition of monolayer MoS2. Acta Physica Sinica, 2016, 65(12): 127101.doi:10.7498/aps.65.127101 |
[13] |
Li Ming-Lin, Wan Ya-Ling, Hu Jian-Yue, Wang Wei-Dong.Molecular dynamics simulation of effects of temperature and chirality on the mechanical properties of single-layer molybdenum disulfide. Acta Physica Sinica, 2016, 65(17): 176201.doi:10.7498/aps.65.176201 |
[14] |
Zhang Li-Yong, Fang Liang, Peng Xiang-Yang.Tuning the electronic property of monolayer MoS2 adsorbed on metal Au substrate: a first-principles study. Acta Physica Sinica, 2015, 64(18): 187101.doi:10.7498/aps.64.187101 |
[15] |
Wei Xiao-Xu, Cheng Ying, Huo Da, Zhang Yu-Han, Wang Jun-Zhuan, Hu Yong, Shi Yi.PL enhancement of MoS2 by Au nanoparticles. Acta Physica Sinica, 2014, 63(21): 217802.doi:10.7498/aps.63.217802 |
[16] |
Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101 |
[17] |
Wu Mu-Sheng, Xu Bo, Liu Gang, Ouyang Chu-Ying.The effect of strain on band structure of single-layer MoS2: an ab initio study. Acta Physica Sinica, 2012, 61(22): 227102.doi:10.7498/aps.61.227102 |
[18] |
Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei.Electrical and optical properties of single As-doped ZnO nanowire field effect transistors. Acta Physica Sinica, 2009, 58(6): 4156-4161.doi:10.7498/aps.58.4156 |
[19] |
Chen Chang-Hong, Huang De-Xiu, Zhu Peng.Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H films. Acta Physica Sinica, 2007, 56(9): 5221-5226.doi:10.7498/aps.56.5221 |
[20] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |