Numerical investigation of SiO<sub>2</sub> film deposition enhanced by capacitively coupled discharge plasma

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Abstract

Higher requirements for the performances of thin films need to be fulfilled in the rapid development of integrated circuit technology, due to the more complicate structure and smaller size of chips. In plasma-enhanced chemical vapor deposition , high-density and high-performance thin films can be deposited at low temperature, compared with traditional chemical vapor deposition. In this work, a two-dimensional fluid/MC model coupled with the deposition module is used to describe the capacitively coupled SiH ₄/N ₂O/Ar discharges as well as the deposition processes, focusing on the influences of the radial position, gas ratio and gas pressure on the deposition of silicon oxide films. The results show that the edge effect which leads the plasma density to rise near the electrode edges gives rise to the non-uniform deposition rate along the radial direction. It is also found that the more N ₂O and less Ar content in the gas mixture, as well as an increased gas pressure will improve this uniformity. However, an excessive deposition rate will lead to a series of undesirable phenomena, such as “key hole structure”, vacancies and excessive impurities in films. These problems are also troublesome in the microelectronics manufacture processes. More detailed investigation into the deposition mechanism can be expected in the future .

Keywords:

plasma-enhanced chemical vapor deposition/
film deposition/
surface reaction

Authors and contacts

Corresponding author:Song Yuan-Hong,songyh@dlut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 12020101005, 11975067, 12005176).

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No.	Reactions	P_i0	ε_th/eV	ε_ref/eV	参考文献
1	Si_(s)+ Ar⁺→ Si_(g)+ Ar	0.20	15	50	[21,22]
2	SiO_(s)+ Ar⁺→ Si_(g)+ Ar + O	0.20	15	50	[21,22]
3	SiO_2(s)+ Ar⁺→ SiO_(g)+ Ar + O	0.20	15	50	[21,22]
4	SiH_(s)+ Ar⁺→ SiH_(g)+ Ar	0.20	15	50	[22]
5	SiH_2(s)+ Ar⁺→ SiH_2(g)+ Ar	0.20	15	50	[22]
6	SiH_3(s)+ Ar⁺→ SiH_3(g)+ Ar	0.20	15	50	[22]
7	SiHO_(s)+ Ar⁺→ SiH_(g)+ Ar + O	0.20	15	50	[22]
8	SiH₂O_(s)+ Ar⁺→ SiH_(g)+ Ar + O	0.20	15	50	[22]
9	SiH₃O_(s)+ Ar⁺→ SiH_3(g)+ Ar + O	0.20	15	50	[22]
10	SiO_2(s)+ $\rm SiH_3^+ $ → SiO_2(s)+ SiH₃	0.01614	35	100	[22]
11	Si_(s)+ H⁺→ Si_(g)+ H	0.0007	4/35	100/100	[14,15]
12	SiO_(s)+ H⁺→Si_(g)+ OH	0.0007	4/35	100/100	[14,15]
13	SiO_2(s)+H⁺→SiO_(g)+ OH	0.0007	4/35	100/100	[14,15]
14	SiH_(s)+ H⁺→SiH_(g)+ H	0.0007	4/35	100/100	[14,15]
15	SiH_2(s)+ H⁺→SiH_2(g)+ H	0.0007	4/35	100/100	[14,15]
16	SiH_3(s)+ H⁺→SiH_3(g)+ H	0.0007	4/35	100/100	[14,15]
17	SiHO_(s)+ H⁺→SiH_(g)+ OH	0.0007	4/35	100/100	[14,15]
18	SiH₂O_(s)+ H⁺→SiH_2(g)+ OH	0.0007	4/35	100/100	[14,15]
19	SiH₃O_(s)+ H⁺→ SiH_3(g)+ OH	0.007	4/35	100/100	[14,15]
20	Si_(s)+ $\rm O_2^+ $ → SiO_2(g)	0.20	15	50	[22]
21	SiO_(s)+ $\rm O_2^+ $ → SiO_2(g)+ O	0.20	15	50	[22]
22	SiO_2(s)+ $\rm O_2^+ $ → SiO_2(g)+ O₂	0.0163	35	50	[14,15]
23	Si_(s)+ O⁺→ SiO_(g)	0.20	15	50	[22]
24	SiO_(s)+ O⁺→ SiO_2(g)	0.20	15	50	[22]
25	SiO_2(s)+ O⁺→ SiO_2(g)+ O	0.01153	35	50	[14,15]
26	SiH₄O_(s)+ O⁺→ SiO_2(g)+ 2H₂	1.00	35	50	[14,15]
27	SiO_2(s)+ N₂O⁺→ SiO_2(g)+ N₂O	0.02	35	100	[15]
28	SiO_2(s)+ $\rm N_2^+ $ → SiO_2(g)+ N₂	0.02	35	100	[15]

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No.	Reactions	P_n0	参考文献	No.	Reactions	P_n0	参考文献
1	Si_(s)+ O → SiO_(s)	0.99	[22]	26	SiH₃O_(s)+ OH → SiH₂O_(s)+ H₂O	1.00	[14,15]
2	SiO_(s)+ O → SiO_2(s)	0.10	[22]	27	SiH_(s)+ H → Si_(s)+ H₂	1.00	[22]
3	SiH_(s)+ O → SiHO_(s)	1.00	[22]	28	SiH_2(s)+ H → SiH_(s)+ H₂	1.00	[22]
4	SiH_2(s)+ O → SiH₂O_(s)	1.00	[22]	29	SiH_3(s)+ H → SiH_2(s)+ H₂	0.955	[22]
5	SiH_3(s)+ O → SiH₃O_(s)	1.00	[22]	30	SiH_3(s)+ H → SiH_4(g)	0.045	[22]
6	SiHO_(s)+ O → SiO_(s)+ H	1.00	[22]	31	SiHO_(s)+ H → SiO_(s)+ H₂	1.00	[22]
7	SiH₂O_(s)+ O → SiHO_(s)+ H	1.00	[22]	32	SiH₂O_(s)+ H → SiHO_(s)+ H₂	1.00	[22]
8	SiH₂O_(s)+ O → SiO_2(s)+ H₂	0.50	[15]	33	SiH₃O_(s)+ H → SiH₂O_(s)+ H₂	1.00	[22]
9	SiH₃O_(s)+ O → SiH₂O_(s)+ H₂	1.00	[22]	34	SiO_(s)+ SiH₃O → SiO_2(s)+ SiH₃	1.00	[14,15]
10	SiH₄O_(s)+ O → SiO_2(s)+ 2H₂	1.00	[14,15]	35	SiHO_(s)+ SiH₃O → SiH₃O_(s)	1.00	[14,15]
11	Si_(s)+ O₂→ SiO_2(s)	1.00	[22]	36	SiH₄O_(s)+ SiHO → SiO_2(s)+ SiH₃+ H₂	1.00	[14,15]
12	SiO_(s)+ O₂→ SiO_2(s)+ O	0.99	[22]	37	SiHO_(s)+ SiHO → SiHO + SiHO_(s)	1.00	[22]
13	SiH_(s)+ O₂→ SiHO_(s)+ O	0.01	[22]	38	Si_(s)+ SiO → SiO_(s)+ Si_(s)	0.80	[22]
14	SiH_2(s)+ O₂→ SiH₂O_(s)+ O	0.01	[22]	39	SiO_(s)+ SiO → 2SiO_(s)	0.80	[22]
15	SiH_3(s)+ O₂→ SiH₃O_(s)+ O	0.01	[22]	40	SiO_2(s)+ SiO → SiO_(s)+ SiO_2(s)	0.80	[22]
16	SiHO_(s)+ O₂→ SiO_(s)+ H + O₂	0.01	[22]	41	SiHO_(s)+ SiO → SiO_(s)	1.00	[22]
17	SiH₂O_(s)+ O₂→ SiHO_(s)+ H + O₂	0.01	[14]	42	SiH₄O_(s)+ SiO → SiO_2(s)+ SiH₄	1.00	[14,15]
18	SiH₃O_(s)+ O₂→ SiH₂O_(s)+ H + O₂	0.01	[22]	43	Si_(s)+ SiO₂→ SiO_2(s)+ Si_(s)	0.80	[22]
19	Si_(s)+ OH → SiHO_(s)	1.00	[22]	44	SiO_(s)+ SiO₂→ SiO_2(s)+ SiO_(s)	0.80	[22]
20	SiO_(s)+ OH → SiO_2(s)+ H	1.00	[22]	45	SiO_2(s)+ SiO₂→ SiO_2(s)+ SiO_2(s)	0.80	[22]
21	SiH_(s)+ OH → SiH₂O_(s)	1.00	[22]	46	SiO_2(s)→ SiO_2(s)	1.00	[22]
22	SiH_2(s)+ OH → SiH₃O_(s)	1.00	[15]	47	SiHO_(s)+ SiO₂→ SiO_2(s)	1.00	[22]
23	SiH_3(s)+ OH → SiH₄O_(s)	1.00	[15]	48	SiHO_(s)+ SiH₃→ SiH_3(s)	0.30	[22]
24	SiHO_(s)+ OH → SiO_(s)+ H₂O	1.00	[22]	49	SiHO_(s)+ SiH₂O→ SiH₂O_(s)	1.00	[22]
25	SiH₂O_(s)+ OH → SiHO_(s)+ H₂O	1.00	[22]

DownLoad: CSV

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