- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

By integrating the storage and computing functions on the fundamental elements, computing in-memory (CIM) technology is widely considered as a novel computational paradigm that can break the bottleneck of Von Neumann architecture. Nonvolatile memory device is an appropriate hardware implementation approach of CIM, which possess significantly advantages, such as excellent scalability, low consumption, and versatility. In this paper, first we introduce the basic concept of CIM, including the technical background and technical characteristics. Then, we review the traditional and novel nonvolatile memory devices, flash and resistive random access memory (RRAM), used in non-volatile based computing in-memory (nvCIM) system. After that, we explain the operation modes of nvCIM: in-memory analog computing and in-memory digital computing. In addition, the applications of nvCIM are also discussed, including deep learning accelerator, neuromorphic computing, and stateful logic. Finally, we summarize the current research advances in nvCIM and provide an outlook on possible research directions in the future.

Keywords:

Authors and contacts

Corresponding author:Kang Jin-Feng,kangjf@pku.edu.cn

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]
[103]
[104]
[105]
[106]
[107]
[108]
[109]
[110]
[111]
[112]
[113]

Cited By

DownLoad: Full-Size Img PowerPoint

	存内模拟计算	存内数字运算
功能	布尔逻辑, 代数运算	布尔逻辑
优势	高运算密度, 高并行度, 缓解数据搬运	精确计算, 高并行度, 缓解数据搬运
挑战	运算精度, 模数转化	器件鲁棒性、波动性
应用	深度学习、类脑计算等	逻辑电路、嵌入式存储

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]
[103]
[104]
[105]
[106]
[107]
[108]
[109]
[110]
[111]
[112]
[113]

[1]	Ke Qing, Dai Yue-Hua.Kinetics study of ions in conductive filament growth process of electrochemical metallization resistive memory. Acta Physica Sinica, 2023, 72(24): 248501.doi:10.7498/aps.72.20231232
[2]	Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua.High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites. Acta Physica Sinica, 2023, 72(4): 048501.doi:10.7498/aps.72.20221507
[3]	Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting.Resistive switching characteristics of HfO_x-based resistance random access memory under photoelectric synergistic regulation. Acta Physica Sinica, 2023, 72(19): 197201.doi:10.7498/aps.72.20230797
[4]	Zhu Mao-Cong, Shao Ya-Jie, Zhou Jing, Chen Wen, Wang Zhi-Qing, Tian Jing.Resistive properties of CuInS₂quantum dots regulated by niobium-doped lead zirconate titanate ferroelectric films. Acta Physica Sinica, 2022, 71(20): 207301.doi:10.7498/aps.71.20220911
[5]	Wu Chang-Chun, Zhou Pu-Jun, Wang Jun-Jie, Li Guo, Hu Shao-Gang, Yu Qi, Liu Yang.Memristor based spiking neural network accelerator architecture. Acta Physica Sinica, 2022, 71(14): 148401.doi:10.7498/aps.71.20220098
[6]	Ren Kuan, Zhang Wo-Yu, Wang Fei, Guo Ze-Yu, Shang Da-Shan.Next-generation reservoir computing based on memristor array. Acta Physica Sinica, 2022, 71(14): 140701.doi:10.7498/aps.71.20220082
[7]	Gong Shao-Kang, Zhou Jing, Wang Zhi-Qing, Zhu Mao-Cong, Shen Jie, Wu Zhi, Chen Wen.Size-controlled resistive switching performance and regulation mechanism of SnO₂QDs. Acta Physica Sinica, 2021, 70(19): 197301.doi:10.7498/aps.70.20210608
[8]	Zeng Fan-Ju, Tan Yong-Qian, Tang Xiao-Sheng, Zhang Xiao-Mei, Yin Hai-Feng.Progress of lead-free perovskite and its resistance switching performance. Acta Physica Sinica, 2021, 70(15): 157301.doi:10.7498/aps.70.20210065
[9]	Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming.Total ionizing dose effects ofγand X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica, 2019, 68(3): 038501.doi:10.7498/aps.68.20181661
[10]	Zhang Zhi-Chao, Wang Fang, Wu Shi-Jian, Li Yi, Mi Wei, Zhao Jin-Shi, Zhang Kai-Liang.Influneces of different oxygen partial pressures on switching properties of Ni/HfOx/TiN resistive switching devices. Acta Physica Sinica, 2018, 67(5): 057301.doi:10.7498/aps.67.20172194
[11]	Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu.Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory. Acta Physica Sinica, 2018, 67(6): 063101.doi:10.7498/aps.67.20172459
[12]	Dai Yue-Hua, Pan Zhi-Yong, Chen Zhen, Wang Fei-Fei, Li Ning, Jin Bo, Li Xiao-Feng.Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study. Acta Physica Sinica, 2016, 65(7): 073101.doi:10.7498/aps.65.073101
[13]	Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng.Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica, 2015, 64(20): 207302.doi:10.7498/aps.64.207302
[14]	Wang Jia-Yu, Dai Yue-Hua, Zhao Yuan-Yang, Xu Jian-Bin, Yang Fei, Dai Guang-Zhen, Yang Jin.Research on charge trapping memory’s over erase. Acta Physica Sinica, 2014, 63(20): 203101.doi:10.7498/aps.63.203101
[15]	Wang Jia-Yu, Zhao Yuan-Yang, Xu Jian-Bin, Dai Yue-Hua.Effect of defect on the programming speed of charge trapping memories. Acta Physica Sinica, 2014, 63(5): 053101.doi:10.7498/aps.63.053101
[16]	Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi.Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure. Acta Physica Sinica, 2014, 63(6): 067202.doi:10.7498/aps.63.067202
[17]	Rong Jia-Ling, Chen Yun-Han, Zhou Jie, Zhang Xue, Wang Li, Cao Jin.SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al. Acta Physica Sinica, 2013, 62(22): 228502.doi:10.7498/aps.62.228502
[18]	Yang Jin, Zhou Mao-Xiu, Xu Tai-Long, Dai Yue-Hua, Wang Jia-Yu, Luo Jing, Xu Hui-Fang, Jiang Xian-Wei, Chen Jun-Ning.Composite interfaces and electrode properties of resistive random access memory devices. Acta Physica Sinica, 2013, 62(24): 248501.doi:10.7498/aps.62.248501
[19]	Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming.Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory. Acta Physica Sinica, 2006, 55(8): 4347-4352.doi:10.7498/aps.55.4347
[20]	Sun Jin-Peng, Wang Tai-Hong.Coulomb blockade three-valued single-electron memory. Acta Physica Sinica, 2003, 52(10): 2563-2568.doi:10.7498/aps.52.2563

Catalog

Vol. 71, Issue 14 - 2022-07-20

Metrics

Abstract views:6870
PDF Downloads:266
Cited By:0

Search

Article