- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

NiGe/n-Ge Schottky barrier height is modulated by Ni/n-Ge reaction with 1 nm Al as an intermediate layer. The series resistance, barrier height and ideal factor of Schottky diodes are extracted by the forward I- Vmethod, Cheung method and Norde method, respectively. Comparing with Ni/n-Ge SBD, the introduction of 1 nm Al insertion layer between Ni and Ge substrates can effectively reduce the barrier height and maintain stability between 350 ℃ and 450 ℃.

Keywords:

Authors and contacts

Corresponding author:Zhang Bo,bozhang@mail.sim.ac.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 62074152).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

Cited By

DownLoad: Full-Size Img PowerPoint

样品		肖特基势垒高度 ${\phi }_{\mathrm{B} }$/eV			理想因子 $ n $		串联电阻R_S/Ω
样品		正向I-V法	Cheung法	Norde法	Cheung法	正向I-V法	Cheung法	Norde法
350 ℃	Ni/n-Ge	0.38	0.35	0.48	1.06	1.41	43.43	44.52
350 ℃	Ni/Al/n-Ge	0.35	0.23	0.39	1.55	1.3	211.58	367.23
400 ℃	Ni/n-Ge	0.38	0.33	0.46	1.07	1.04	39.42	46.86
400 ℃	Ni/Al/n-Ge	0.35	0.25	0.39	1.34	0.85	138.58	122.67
450 ℃	Ni/n-Ge	0.36	0.3	0.42	1.13	0.92	78.71	110.72
450 ℃	Ni/Al/n-Ge	0.32	0.17	0.34	1.81	1.54	252.07	150.56

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

[1]	Li Ran-Ran, Zhang Yi-Fan, Yin Yu-Peng, Watanabe Hideo, Han Wen-Tuo, Yi Xiao-Ou, Liu Ping-Ping, Zhang Gao-Wei, Zhan Qian, Wan Fa-Rong.In-situstudy of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum. Acta Physica Sinica, 2022, 71(1): 016102.doi:10.7498/aps.71.20211229
[2]	Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo.Regulation and control of Schottky barrier in graphene/MoSe₂heteojuinction by asymmetric oxygen doping. Acta Physica Sinica, 2022, 71(1): 017104.doi:10.7498/aps.71.20210238
[3]	Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796
[4]	.An in-situ study of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211229
[5]	Sun Yu-Xin, Wu De-Fan, Zhao Tong, Lan Wu, Yang De-Ren, Ma Xiang-Yang.Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen. Acta Physica Sinica, 2021, 70(9): 098101.doi:10.7498/aps.70.20201803
[6]	Zhang Jie-Yin, Gao Fei, Zhang Jian-Jun.Research progress of silicon and germanium quantum computing materials. Acta Physica Sinica, 2021, 70(21): 217802.doi:10.7498/aps.70.20211492
[7]	Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei.Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica, 2020, 69(15): 157302.doi:10.7498/aps.69.20191987
[8]	Du Yu-Feng, Cui Li-Juan, Li Jin-Sheng, Li Ran-Ran, Wan Fa-Rong.Anomalous heat-releasing phenomenon from bubbles in aluminum induced by electron beam irradiation. Acta Physica Sinica, 2018, 67(21): 216101.doi:10.7498/aps.67.20181140
[9]	Wu Kong-Ping, Sun Chang-Xu, Ma Wen-Fei, Wang Jie, Wei Wei, Cai Jun, Chen Chang-Zhao, Ren Bin, Sang Li-Wen, Liao Mei-Yong.Interface electronic structure and the Schottky barrier at Al-diamond interface: hybrid density functional theory HSE06 investigation. Acta Physica Sinica, 2017, 66(8): 088102.doi:10.7498/aps.66.088102
[10]	Li Jie, Gao Jin, Wan Fa-Rong.The change of microstructure in deuteron-implanted aluminum under electron irradiation. Acta Physica Sinica, 2016, 65(2): 026102.doi:10.7498/aps.65.026102
[11]	Shi Wen-Jun, Yi Ying-Yan, Li Min.Pressure dependence of refractive index of Ge near the absorption edge. Acta Physica Sinica, 2016, 65(16): 167801.doi:10.7498/aps.65.167801
[12]	Shi Da-Wei, Wu Mei-Ling, Yang Chang-Ping, Ren Chun-Ling, Xiao Hai-Bo, Wang Kai-Ying.AC properties of Pr0.7Ca0.3MnO3 ceramics. Acta Physica Sinica, 2013, 62(2): 026201.doi:10.7498/aps.62.026201
[13]	Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao.A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica, 2013, 62(16): 168801.doi:10.7498/aps.62.168801
[14]	Cheng Zhi-Da, Zhu Jing, Sun Tie-Yu.Stability and magnetism of fcc single-crystal nickel nanowires by first principles calculations. Acta Physica Sinica, 2011, 60(3): 037504.doi:10.7498/aps.60.037504
[15]	Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao.Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica, 2010, 59(12): 8856-8861.doi:10.7498/aps.59.8856
[16]	Yu Yu-Ying, Tan Hua, Hu Jian-Bo, Dai Cheng-Da, Chen Da-Nian, Wang Huan-Ran.Effective shear modulus in shock-compressed aluminum. Acta Physica Sinica, 2008, 57(4): 2352-2357.doi:10.7498/aps.57.2352
[17]	Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui.Poly-SiGe films prepared by metal-induced growth using UHVCVD system. Acta Physica Sinica, 2006, 55(7): 3756-3759.doi:10.7498/aps.55.3756
[18]	Han Yi, Ban Chun-Yan, Ba Qi-Xian, Wang Shu-Han, Cui Jian-Zhong.Effect of magnetic field on the interfacial microstructure between molten aluminium and solid iron. Acta Physica Sinica, 2005, 54(6): 2955-2960.doi:10.7498/aps.54.2955
[19]	Hu Jian-Bo, Yu Yu-Ying, Dai Cheng-Da, Tan Hua.Shear modulus of aluminum under shock loading. Acta Physica Sinica, 2005, 54(12): 5750-5754.doi:10.7498/aps.54.5750
[20]	LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501

Catalog

Vol. 71, Issue 20 - 2022-10-20

Metrics

Abstract views:3124
PDF Downloads:39
Cited By:0

Search

Article