[1] |
Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang.Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302.doi:10.7498/aps.72.20230411 |
[2] |
Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning.Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica, 2017, 66(16): 168501.doi:10.7498/aps.66.168501 |
[3] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong.High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501.doi:10.7498/aps.65.168501 |
[4] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[5] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
[6] |
Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei.Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica, 2013, 62(7): 077301.doi:10.7498/aps.62.077301 |
[7] |
Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei.The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301.doi:10.7498/aps.62.047301 |
[8] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
[9] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
[10] |
Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue.Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2012, 61(5): 057202.doi:10.7498/aps.61.057202 |
[11] |
Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua.Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205.doi:10.7498/aps.60.017205 |
[12] |
Feng Chao-Wen, Cai Li, Kang Qiang, Peng Wei-Dong, Bai Peng, Wang Jia-Fu.Realization of the discrete chaotic system based on SET-MOS circuits. Acta Physica Sinica, 2011, 60(11): 110502.doi:10.7498/aps.60.110502 |
[13] |
Sui Bing-Cai, Fang Liang, Zhang Chao.Conductance of single-electron transistor with single island. Acta Physica Sinica, 2011, 60(7): 077302.doi:10.7498/aps.60.077302 |
[14] |
Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei.High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337.doi:10.7498/aps.59.7333 |
[15] |
Lin Feng, Li Zuan-Yi, Wang Shan-Ying.Mechanical and electronic properties of TiO2 nanotubes. Acta Physica Sinica, 2009, 58(12): 8544-8548.doi:10.7498/aps.58.8544 |
[16] |
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
[18] |
Guo Rong-Hui, Zhao Zheng-Ping, Hao Yue, Liu Yu-Gui, Wu Yi-Bin, Lü Miao.Realization and output characteristics analysis of the multiple islands single- electron transistors. Acta Physica Sinica, 2005, 54(4): 1804-1808.doi:10.7498/aps.54.1804 |
[19] |
Zhang Zhi-Yong, Wang Tai-Hong.Multipeak negative-differential-resistance device by combining SET and MOSFET. Acta Physica Sinica, 2003, 52(7): 1766-1770.doi:10.7498/aps.52.1766 |
[20] |
Wu Fan, Wang Tai-Hong.Stabilitydiagramsforsingle electrontransistors. Acta Physica Sinica, 2002, 51(12): 2829-2835.doi:10.7498/aps.51.2829 |