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Wu Peng, Tan Lun, Li Wei, Cao Li-Wei, Zhao Jun-Bo, Qu Yao, Li Ang.Preparation and photoelectric property of large scale monolayer MoS2. Acta Physica Sinica, 2023, 72(11): 118101.doi:10.7498/aps.72.20230273 |
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Li Lu, Zhang Yang-Kun, Shi Dong-Xia, Zhang Guang-Yu.Cotrollable growth of monolayer MoS2films and their applications in devices. Acta Physica Sinica, 2022, 71(10): 108102.doi:10.7498/aps.71.20212447 |
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Fu Qun-Dong, Wang Xiao-Wei, Zhou Xiu-Xian, Zhu Chao, Liu Zheng.Synthesis of two-dimensional Bi2O2Se on silicon substrate by chemical vapor deposition and its photoelectric detection application. Acta Physica Sinica, 2022, 71(16): 166101.doi:10.7498/aps.71.20220388 |
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Fei Xiang, Zhang Xiu-Mei, Fu Quan-Gui, Cai Zheng-Yang, Nan Hai-Yan, Gu Xiao-Feng, Xiao Shao-Qing.Milimeter-level MoS2monolayers and WS2-MoS2heterojunctions grown on molten glass by pre-chemical vapor deposition. Acta Physica Sinica, 2022, 71(4): 048101.doi:10.7498/aps.71.20211735 |
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Jiang Li-Ying, Yi Ying-Ting, Yi Zao, Yang Hua, Li Zhi-You, Su Ju, Zhou Zi-Gang, Chen Xi-Fang, Yi You-Gen.A four-band perfect absorber based on high quality factor and high figure of merit of monolayer molybdenum disulfide. Acta Physica Sinica, 2021, 70(12): 128101.doi:10.7498/aps.70.20202163 |
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Wang Shuo, Wang Wen-Hui, Lü Jun-Peng, Ni Zhen-Hua.Chemical vapor deposition growth of large-areas two dimensional materials: Approaches and mechanisms. Acta Physica Sinica, 2021, 70(2): 026802.doi:10.7498/aps.70.20201398 |
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Liu Kai-Long, Peng Dong-Sheng.Effects of photoelectric properties of monolayer MoS2under tensile strain. Acta Physica Sinica, 2021, 70(21): 217101.doi:10.7498/aps.70.20210816 |
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Zhang Xiao-Bo, Qing Fang-Zhu, Li Xue-Song.Clean transfer of chemical vapor deposition graphene film. Acta Physica Sinica, 2019, 68(9): 096801.doi:10.7498/aps.68.20190279 |
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Wei Zheng, Wang Qin-Qin, Guo Yu-Tuo, Li Jia-Wei, Shi Dong-Xia, Zhang Guang-Yu.Research progress of high-quality monolayer MoS2 films. Acta Physica Sinica, 2018, 67(12): 128103.doi:10.7498/aps.67.20180732 |
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Liu Le, Tang Jian, Wang Qin-Qin, Shi Dong-Xia, Zhang Guang-Yu.Thermal stability of MoS2 encapsulated by graphene. Acta Physica Sinica, 2018, 67(22): 226501.doi:10.7498/aps.67.20181255 |
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Zhang Xin-Cheng, Liao Wen-Hu, Zuo Min.Electronic structure and spin/valley transport properties of monolayer MoS2 under the irradiation of the off-resonant circularly polarized light. Acta Physica Sinica, 2018, 67(10): 107101.doi:10.7498/aps.67.20180213 |
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Wei Yang, Ma Xin-Guo, Zhu Lin, He Hua, Huang Chu-Yun.Interfacial cohesive interaction and band modulation of two-dimensional MoS2/graphene heterostructure. Acta Physica Sinica, 2017, 66(8): 087101.doi:10.7498/aps.66.087101 |
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Li Ming-Lin, Wan Ya-Ling, Hu Jian-Yue, Wang Wei-Dong.Molecular dynamics simulation of effects of temperature and chirality on the mechanical properties of single-layer molybdenum disulfide. Acta Physica Sinica, 2016, 65(17): 176201.doi:10.7498/aps.65.176201 |
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Zhang Li-Yong, Fang Liang, Peng Xiang-Yang.First-principles study on multiphase property and phase transition of monolayer MoS2. Acta Physica Sinica, 2016, 65(12): 127101.doi:10.7498/aps.65.127101 |
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Dong Yan-Fang, He Da-Wei, Wang Yong-Sheng, Xu Hai-Teng, Gong Zhe.Synthesis of large size monolayer MoS2 with a simple chemical vapor deposition. Acta Physica Sinica, 2016, 65(12): 128101.doi:10.7498/aps.65.128101 |
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Zhang Li-Yong, Fang Liang, Peng Xiang-Yang.Tuning the electronic property of monolayer MoS2 adsorbed on metal Au substrate: a first-principles study. Acta Physica Sinica, 2015, 64(18): 187101.doi:10.7498/aps.64.187101 |
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Wu Mu-Sheng, Xu Bo, Liu Gang, Ouyang Chu-Ying.The effect of strain on band structure of single-layer MoS2: an ab initio study. Acta Physica Sinica, 2012, 61(22): 227102.doi:10.7498/aps.61.227102 |
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Guo Ping-Sheng, Chen Ting, Cao Zhang-Yi, Zhang Zhe-Juan, Chen Yi-Wei, Sun Zhuo.Low temperature growth of carbon nanotubes by chemical vapor deposition for field emission cathodes. Acta Physica Sinica, 2007, 56(11): 6705-6711.doi:10.7498/aps.56.6705 |
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Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng.Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica, 2003, 52(3): 687-691.doi:10.7498/aps.52.687 |
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CHEN XIAO-HUA, WU GUO-TAO, DENG FU-MING, WANG JIAN-XIONG, YANG HANG-SHENG, WANG MIAO, LU XIAO-NAN, PENG JING-CUI, LI WEN-ZHU.GROWING CARBON BUCKONIONS BY RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 2001, 50(7): 1264-1267.doi:10.7498/aps.50.1264 |