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Abstract

In this paper, we fabricate a back channel etched structure thin film transistor (TFT) pixel array with hafnium-aluminum oxide dielectric and indium-zinc-tin-oxide (IZTO) semiconductor using a solution process. The electrical characteristics of IZTO TFT are modified by N ₂O plasma treatment. In comparison with the subthreshold swing and saturation mobility of the device untreated by plasma , the subthreshold swing decreases from 204 to 137 mV·dec ^–1, and the saturation mobility increases from 29.12 to 51.52 cm ²·V ^–1·s ^–1. Improvement in the mobility and the subthreshold swing (SS) demonstrate that interface states may be passivated by reactive O radicals that are generated by N ₂O plasma, which is confirmed by the result of X-ray photoelectron spectrum analysis. In addition, the stability of negative bias illumination stress (NBIS) shift is only 0.1V for 3600 s with an illumination intensity of 10000 lux. This result indicates that its superior stability meets the requirements for the display driver. Therefore, N ₂O plasma treatment is verified to be an effective method to improve device performance and light stability for IZTO TFT pixel array.

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Authors and contacts

Corresponding author:Li Xi-Feng,lixifeng@shu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 62174105, 61674101), the Program of Academic/Technology Research Leader of Shanghai, China (Grant No. 18XD1424400), the Shanghai Education Development Foundation and Shanghai Municipal Education Commission, CHina (Grant No. 18SG38).

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	阈值电压/ V	迁移率/ (cm²·V^–1·s^–1)	亚阈值摆幅/ (mV·dec^–1)	开关比
Untreated	–0.5	29.12	204	1.1×10⁷
Treated	0.1	51.52	137	2.3×10⁷

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Vol. 71, Issue 13 - 2022-07-05

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