Application of EDTA/SnO<sub>2</sub> double-layer composite electron transport layer to perovskite solar cells

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Abstract

Organic-inorganic hybrid perovskite solar cell devices have received wide attention because of their high efficiency, and interface problem is one of the key problems in the preparation of perovskite solar cells. An efficient double-layered ethylene diamine tetraacetic acid (EDTA)/SnO ₂composite structure, the ultrathin EDTA layer in contact with ITO electrode and an SnO ₂layer interfaced with the perovskite, is developed as an electron-transport layer (ETL) in the preparation of perovskite solar cells. It is interesting that the surface morphology of the top SnO ₂side of the composite ETL can be finely adjusted by tuning the underneath EDTA layer. These control the nucleation process in crystallization of the perovskite layer and adjust carrier extraction process between the electron transport and perovskite layers. High performance perovskite solar cells having a certified power conversion efficiency of 20.2% with negligible hysteresis are achieved.

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Corresponding author:Zheng Yi-Fan,yifanzheng@siom.ac.cn

Funds:Project supported by the National Key R&D program of China (Grant No. 2018YFE0118000), National Natural Science Foundation of China (Grant Nos. 52103279, 62104234), and Shanghai Sailing Program (Grant No. 21YF1454000).

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(ITO)/ETL	V_OC/ V	J_SC/ (mA·cm^–2)	FF /%	PCE /%
SnO₂	1.047	23.20	75.42	18.32
EDTA(0.2 mg/mL)	1.044	21.97	71.63	16.43
SnO₂: EDTA^a	1.077	23.07	76.67	19.05
SnO₂/EDTA (0.2 mg/mL)	1.059	23.55	78.59	18.05
EDTA (0.2 mg/mL)/SnO₂	1.068	23.65	81.37	20.55
^a溶液中SnO₂∶EDTA质量比为133.5∶1.

DownLoad: CSV

EDTA concentration/ (mg·ML^–1)	Perovskite films
	SEM	X-ray diffraction
	Grain size/ nm	2θat (100)/ (°)	Intensity at (100)	∆Lat (100)/ nm
0	557	14.00	0.543	516
0.1	784	14.00	0.671	765
0.15	834	14.00	0.839	811
0.2	925	14.00	1.000	888
0.3	704	14.00	0.756	664

DownLoad: CSV

EDTA concentration/ (mg·mL^–1)	τ₁/ns	A₁/%^a	τ₂/ns	A₂/%^a	τ_avg/ns
0	48.7	70.2	745.4	29.8	652.3
0.1	38.3	78.1	710.9	21.9	602.4
0.15	36.8	78.1	484.4	21.9	389.0
0.2	33.8	81.3	465.5	18.7	361.9
0.3	35.3	80.9	659.6	19.1	544.6
^aA_iis the fraction ofτ_icomponent.

DownLoad: CSV

Devices	Scan direction	V_OC/V	J_SC/ (mA·cm^–2)	FF/%	PCE/%	H-index/ %	R_P/Ω	R_S/ Ω
Device 0	RS	1.047	23.20	75.35	18.3	8.25	3757	3.64
(control)	FS	1.052	23.03	69.32	16.79
Device 1	RS	1.062	23.42	77.53	19.28	6.95	4409	3.26
	FS	1.047	23.12	74.12	17.94
Device 2	RS	1.068	23.61	79.60	20.07	3.99	4683	3.02
	FS	1.063	23.41	77.42	19.27
Device 3	RS	1.068	23.65	81.37	20.55	2.53	5537	2.88
	FS	1.064	23.48	80.18	20.03
Device 4	RS	1.057	23.60	78.49	19.58	6.69	5135	3.19
	FS	1.051	23.22	74.88	18.27

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Vol. 71, Issue 13 - 2022-07-05

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