- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

High electron mobility transistors(HEMTs)show tremendous potentials for high mobility, high breakdown voltage, low conduction, low power consumption, and occupy an important piece of the microelectronics field. The high-resistivity-cap-layer high electron mobility transistor (HRCL-HEMT) is a novel device structure. Based on the hole compensation mechanism, the p-GaN is converted into high resistance semiconductor material by hydrogen plasma implantation. Thus, the surface of the p-GaN layer will have a serious bombardment damage under the hydrogen plasma implantation. In practical work, it is also very challenging in the accurate controlling of the hydrogen injection rate, injection depth and injection uniformity. To achieve the required depth of injection, the injected hydrogen plasma is often more than the required dose or multiple injections times. The energy of hydrogen plasma plays a huge influence on the surface of the p-GaN layer.The leakage current will be generated on the device surface, which deteriorates the electrical performance of the device. In this work, to protect the surface of p-GaN layer, a 2-nm Al ₂O ₃film is deposited on the surface of the p-GaN cap layer to reduce the implantation damage caused by hydrogen plasma treatment. The research shows that after the device deposited Al ₂O ₃film prior to the hydrogen plasma treatment, the gate reverse leakage current is reduced by an order of magnitude, the ratio of I _ONto I _OFFis increased by about 3 times. Meanwhile, the OFF-state breakdown voltage is increased from 410 V to 780 V. In addition, when the bias voltage is 400 V, the values of dynamic R _ONof devices A and B are 1.49 and 1.45 respectively, the device B shows a more stable dynamic performance. To analyze the gate leakage mechanism, a temperature-dependent current I _G- V _Gtesting is carried out, and it is found that the dominant mechanism of gate leakage current is two-dimensional variable range hopping (2D-VRH) at reverse gate voltage. The reason for reducing the gate reverse current is analyzed, and the Al ₂O ₃film increases the activation energy of trap level and changes the surface states of HR-GaN; furthermore, the Al ₂O ₃film blocks the injection of too much H plasma, thereby reducing the density of AlGaN barrier and channel trap states, and weakening the current collapse.

Keywords:

Authors and contacts

Corresponding author:Xing Yan-Hui,xingyanhui@bjut.edu.cn; Zhang Bao-Shun,bszhang2006@sinano.ac.cn;

Funds:Project supported by the Youth Innovation Promotion Association of CAS (Grant No. 2020321), and the National Natural Science Foundation of China (Grant Nos. 61904192, 61731019, 61575008, 61775007); Beijing Natural Science Foundation (Grant No.4202010, 4172011).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]

Cited By

DownLoad: Full-Size Img PowerPoint

器件E_a/meV	栅极电压/V
器件E_a/meV	–10	–9	–8	–7	–6	–5	–4	–3	–2	–1
A	308	321	332	343	353	366	385	404	433	466
B	382	402	422	439	455	470	489	511	524	531

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]

[1]	Liang Qi, Wang Ru-Zhi, Yang Meng-Qi, Wang Chang-Hao, Liu Jin-Wei.Preparing GaN nanowires on Al₂O₃substrate without catalyst and its optical property. Acta Physica Sinica, 2020, 69(8): 087801.doi:10.7498/aps.69.20191923
[2]	Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng.Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica, 2019, 68(5): 057302.doi:10.7498/aps.68.20182088
[3]	Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun.High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics. Acta Physica Sinica, 2017, 66(19): 197301.doi:10.7498/aps.66.197301
[4]	Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng.Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure. Acta Physica Sinica, 2013, 62(19): 197203.doi:10.7498/aps.62.197203
[5]	Zheng Yu-Long, Zhen Cong-Mian, Ma Li, Li Xiu-Ling, Pan Cheng-Fu, Hou Deng-Lu.Room-temperature ferromagnetism observed in Si-Al2O3 composite film. Acta Physica Sinica, 2011, 60(11): 117502.doi:10.7498/aps.60.117502
[6]	Liao Guo-Jin, Luo Hong, Yan Shao-Feng, Dai Xiao-Chun, Chen Ming.Determination of the optical constants of the magnetron sputtered aluminum oxide films from the transmission spectra. Acta Physica Sinica, 2011, 60(3): 034201.doi:10.7498/aps.60.034201
[7]	Wang Lin, Hu Wei-Da, Chen Xiao-Shuang, Lu Wei.Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs. Acta Physica Sinica, 2010, 59(8): 5730-5737.doi:10.7498/aps.59.5730
[8]	Chen Yi-Feng, Chen Xi-Meng, Lou Feng-Jun, Xu Jin-Zhang, Shao Jian-Xiong, Sun Guang-Zhi, Wang Jun, Xi Fa-Yuan, Yin Yong-Zhi, Wang Xing-An, Xu Jun-Kui, Cui Ying, Ding Bao-Wei.Guiding of 60 keV O+ ions through Al2O3 nanocapillaries with two different diameters. Acta Physica Sinica, 2010, 59(1): 222-226.doi:10.7498/aps.59.222
[9]	Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong.Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers. Acta Physica Sinica, 2010, 59(8): 5724-5729.doi:10.7498/aps.59.5724
[10]	Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue.Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica, 2009, 58(1): 536-540.doi:10.7498/aps.58.536
[11]	Li Sheng-Tao, Cheng Peng-Fei, Li Jian-Ying.Thermal stimulated current in sandwiched Al2O3 single crystal samples. Acta Physica Sinica, 2008, 57(12): 7783-7788.doi:10.7498/aps.57.7783
[12]	Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi.Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(11): 7238-7243.doi:10.7498/aps.57.7238
[13]	Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue.Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(1): 467-471.doi:10.7498/aps.57.467
[14]	Lü Ling, Gong Xin, Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132.doi:10.7498/aps.57.1128
[15]	Feng Qian, Hao Yue, Yue Yuan-Zheng.Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica, 2008, 57(3): 1886-1890.doi:10.7498/aps.57.1886
[16]	Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622
[17]	Gu Wei-Chao, Shen De-Jiu, Wang Yu-Lin, Chen Guang-Liang, Feng Wen-Ran, Zhang Gu-Ling, Liu Chi-Zi, Yang Si-Ze.Preparation of Al2O3 ceramic coating by electrolytic plasma processing and its properties. Acta Physica Sinica, 2005, 54(7): 3263-3267.doi:10.7498/aps.54.3263
[18]	Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue.Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films. Acta Physica Sinica, 2005, 54(12): 5901-5906.doi:10.7498/aps.54.5901
[19]	Fang Zhi-Jun, Xia Yi-Ben, Wang Lin-Jun, Zhang Wei-Li, Ma Zhe-Guo, Zhang Ming-Long.Study of the stress observed in diamond films on carbon-implanted alumina surfaces. Acta Physica Sinica, 2003, 52(4): 1028-1033.doi:10.7498/aps.52.1028
[20]	JIN TONG-ZHENG, HAN SHI-YING, SUI YUN-XIA.THE ELECTRON PARAMAGNETIC RESONANCE STUDY OF Fe ION IN α-Al2O3 SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 147-151.doi:10.7498/aps.37.147

Catalog

Vol. 71, Issue 10 - 2022-05-20

Metrics

Abstract views:4895
PDF Downloads:179
Cited By:0

Search

Article