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Abstract

High electron mobility transistors(HEMTs)show tremendous potentials for high mobility, high breakdown voltage, low conduction, low power consumption, and occupy an important piece of the microelectronics field. The high-resistivity-cap-layer high electron mobility transistor (HRCL-HEMT) is a novel device structure. Based on the hole compensation mechanism, the p-GaN is converted into high resistance semiconductor material by hydrogen plasma implantation. Thus, the surface of the p-GaN layer will have a serious bombardment damage under the hydrogen plasma implantation. In practical work, it is also very challenging in the accurate controlling of the hydrogen injection rate, injection depth and injection uniformity. To achieve the required depth of injection, the injected hydrogen plasma is often more than the required dose or multiple injections times. The energy of hydrogen plasma plays a huge influence on the surface of the p-GaN layer.The leakage current will be generated on the device surface, which deteriorates the electrical performance of the device. In this work, to protect the surface of p-GaN layer, a 2-nm Al ₂O ₃film is deposited on the surface of the p-GaN cap layer to reduce the implantation damage caused by hydrogen plasma treatment. The research shows that after the device deposited Al ₂O ₃film prior to the hydrogen plasma treatment, the gate reverse leakage current is reduced by an order of magnitude, the ratio of I _ONto I _OFFis increased by about 3 times. Meanwhile, the OFF-state breakdown voltage is increased from 410 V to 780 V. In addition, when the bias voltage is 400 V, the values of dynamic R _ONof devices A and B are 1.49 and 1.45 respectively, the device B shows a more stable dynamic performance. To analyze the gate leakage mechanism, a temperature-dependent current I _G- V _Gtesting is carried out, and it is found that the dominant mechanism of gate leakage current is two-dimensional variable range hopping (2D-VRH) at reverse gate voltage. The reason for reducing the gate reverse current is analyzed, and the Al ₂O ₃film increases the activation energy of trap level and changes the surface states of HR-GaN; furthermore, the Al ₂O ₃film blocks the injection of too much H plasma, thereby reducing the density of AlGaN barrier and channel trap states, and weakening the current collapse.

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Authors and contacts

Corresponding author:Xing Yan-Hui,xingyanhui@bjut.edu.cn; Zhang Bao-Shun,bszhang2006@sinano.ac.cn;

Funds:Project supported by the Youth Innovation Promotion Association of CAS (Grant No. 2020321), and the National Natural Science Foundation of China (Grant Nos. 61904192, 61731019, 61575008, 61775007); Beijing Natural Science Foundation (Grant No.4202010, 4172011).

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器件E_a/meV	栅极电压/V
器件E_a/meV	–10	–9	–8	–7	–6	–5	–4	–3	–2	–1
A	308	321	332	343	353	366	385	404	433	466
B	382	402	422	439	455	470	489	511	524	531

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Vol. 71, Issue 10 - 2022-05-20

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