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Abstract

The photonic integrated interrogation technology based on array waveguide grating is a hot but difficult research area in the silicon optical field. Compared with traditional interrogation methods, the photonic integration interrogation technology based on an array waveguide grating has obvious advantages in high-speed and high-precision demodulation of fiber Bragg gratings due to its high demodulation accuracy, fast demodulation speed, and small package size. In recent years, with the development of photonic integration technology, various research institutions and relevant organizations have conducted extensive and in-depth research and optimization on the photonic integration interrogation method of array waveguide gratings. In this paper we introduce the working principle of array waveguide grating and the principle of fiber Bragg grating wavelength interrogation based on array waveguide grating, the important progress of fiber Bragg grating interrogator based on array waveguide grating in both material system and system performance, and summarize the typical applications in interrogator based on array waveguide grating. The future development of fiber Bragg grating demodulation system is proposed from three aspects: new materials, system integration, and scale-up, which provides a reference for the research and development of photonic integrated interrogation technology based on array waveguide grating.

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Authors and contacts

Corresponding author:Dong Ming-Li,dongml@bistu.edu.cn; Zhu Lian-Qing,lqzhu_bistu@sina.com

Funds:Project supported by the 111 Project of China (Grant No. D17021), the National Natural Science Foundation of China (Grant No. 51705024), and the Key Project of Beijing Municipal Education Commission Science and Technology Program (Grant No. KZ201911232044).

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Cited By

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研究进展	研究成果	特点
分立组装^[23−27]		系统尺寸仍然很大
InP单片集成^[28−33]		偏振相关性明显
SOI混合/单片集成^[34−40]		单偏振工作, 工艺容差很小
SiO₂混合集成^[41−46]		器件尺寸相对较大, 但其他方面优势明显
聚合物混合集成^[47−50]		特殊应用, 成本较低

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材料体系	优点	缺点	主要应用场景
SiO₂	波导损耗低; 与光纤耦合损耗低; 偏振相关性低; 成本低; 制备工艺成熟稳定	弯曲半径大(一般大于1 mm); 器件尺寸较大(大于几个mm²); 不能用来制备有源器件	主要用来制备无源波导器件, 如耦合器、分路器、滤波器、光开关等, 也可以实现无源与有源器件的混合集成
Si/SOI	制备工艺与CMOS兼容; 弯曲半径小(可到5 μm); 器件尺寸小	单偏振工作; 与光纤耦合损耗大; 制备工艺仍处于发展阶段	可制作无源器件, 利用其扩展材料体系(Ⅲ/Ⅴ-Si、Ge-Si)可实现有源、无源器件单片集成, 但目前混合集成占主导地位
InP	直接带隙半导体材料	偏振相关性明显; 工艺难度大	是制备光源、探测器等有源器件的理想成材率; 可真正意义上实现各种有源与无源器件的单片集成
聚合物	制造简单; 后续处理工作量小; 单位成本低	采样率较低; 光谱展宽和光学损耗方面性能较差	可用于制作无源器件, 如AWG、耦合器、光纤光栅等; 便于实现全聚合物传感系统的搭建

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技术方案	材料体系	动态范围	采样率	光源输出功率	波长分辨率	复用能力
色散滤波器或AWG的波分复用技术^[42,47]	SiO₂	≤10000 με(1 FBG); ≤2500 με(12 FBG)	2 kHz (1 FBG); 20 kHz (5 FBG)	<5 dBm	±5 pm@ 100 Hz	色散滤波器: <12 FBG; AWG: >12
单片集成AWG光谱分析技术^[30]	InP	4000 με/4.8 nm (8 FBG)	19.2 kHz	外部光源: 5 mW (FBG反射率>90%)	5 pm	单通道: 8 FBG
混合集成AWG光谱分析技术^[38]	SOI	5—80 ℃	2 kHz	0.8 mW (–1 dBm)	±10 pm	波分复用: 8通道AWG实现4 FBG解调
混合集成AWG光谱分析技术^[51]	聚合物	3.0—4.2 V	2 Hz	6 mW (FBG反射率为90%)	1 pm	3通道AWG实现 1 FBG解调

DownLoad: CSV

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Vol. 71, Issue 9 - 2022-05-05

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