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Abstract

In this work, Ta/BaTiO ₃/Al ₂O ₃multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO ₃/Al ₂O ₃. The reproducible and stable resistive switching behaviors in Ta/BaTiO ₃/Al ₂O ₃/ITO device at I _cc= 10 ^–2A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.

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Authors and contacts

Corresponding author:Chen Peng,pchen@swu.edu.cn

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Vol. 71, Issue 8 - 2022-04-20

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