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Abstract

The interaction between light and matter has attracted much attention not only for fundamental research but also for applications. The open Fabry-Perot cavity provides an excellent platform for such a study due to strong optical confinement, spectral and spatial and tunability, and the feasibility of optical fiber integration. In this review, first, the basic properties of open Fabry-Perot cavities and the fabrication techniques are introduced. Then recent progress of weak coupling, strong coupling and bad emitter regimes is discussed. Finally, the challenges to and perspectives in this respect are presented.

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Authors and contacts

Corresponding author:Lin Xing,lxing@zju.edu.cn; Fang Wei,wfang08@zju.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200404), the National Natural Science Foundation of China (Grant Nos. 62035013, 61635009, 62075192), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2021QNA5006).

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Cited By

DownLoad: Full-Size Img PowerPoint

制备方法	反射膜层	结构	年份	$\mathit{L}/\text{μm }$	$\mathit{R}/\text{μm }$	$ \mathit{F} $	文献
湿法刻蚀	Au	光纤型	2005	$ 20—200 $	$ 185 $	$ ~100 $	[36]
气泡法	DBR	芯片型	2006	$ 40—60 $	$ 40—100 $	$ 200 $	[37]
转移法	DBR	光纤型	2006	$ 27 $	$ 1000 $	$ 1050 $	[38]
电化学沉积	Au	芯片型	2007	$ 6.5—9.7 $	$ 10 $	$ ~15 $	[39]
CO₂激光烧蚀	DBR	光纤型	2007	$ 38.6 $	$ 150 $	$ 37000 $	[46]
	DBR	光纤型	2010	$ 20—60 $	$ 40—2000 $	$ 38600 $	[17]
	DBR	光纤型	2012	$ 20—2000 $	$ 20—2000 $	$ 100000 $	[47]
	DBR	光纤型	2013	$ 206 $	$ 209 $	$ 45000 $	[48]
	DBR	芯片型	2014	$ 1.34 $	$ 10 $	$ 15000 $	[26]
	DBR	芯片型	2017	$ 1.33 $	$ ~5 $	$ 25000 $	[49]
	DBR	光纤型	2017	$ 100 $	$ 200—360 $	$ 1300 $	[29]
	DBR	光纤型	2018	$ 20 $	$ 66 $	$ 40000 $	[50]
	DBR	光纤型	2019	$ 4 $	$ 43 $	$ ~60 $	[25]
FIB刻蚀	DBR	芯片型	2010	$ 3—13 $	$ 5—25 $	$ 460 $	[34]
	DBR	芯片型	2012	$ 1.6 $	$ 7 $	$ ~1280 $	[14]
	DBR	光纤型	2014	$ 5.6 $	$ 14.1 $	$ 3600 $	[51]*
	DBR	芯片型	2015	$ 1.55 $	$ 4.3 $	$ ~1000 $	[33]
	DBR	芯片型	2016	$ 3 $	$ 6 $	$ ~1000 $	[32]
	DBR	芯片型	2018	$ 2.2 $	$ ~10 $	—	[52]
	DBR	芯片型	2021	1	—	$ 2500 $	[53]
注: 1)所选取微腔参数范围是对应文献典型微腔的参数, 并非涉及文献中所有微腔; 2)部分文献未直接给出F的值, 这里根据(3)式和(4)式进行换算; 3)带*标注是指文献[51]引用参数对应微腔一个端镜由FIB刻蚀产生, 另一个由CO₂激光烧蚀产生; 4)这里R指的是微腔两面端镜的曲率半径中较小的.

DownLoad: CSV

年份	结构	加工方法	量子体系	$ {F}_{\mu } $	文献
2009	光纤型	转移法	InAs量子点	—	[12]
2011	芯片型	激光烧蚀	AlGaAs量子点	1.6	[13]
2015	芯片型	FIB刻蚀	InGaAs量子点	2.54	[55]
2015	芯片型	FIB刻蚀	NV色心	6.25^*	[62]
2017	芯片型	激光烧蚀	NV色心	>30^*	[63]
2021	芯片型	激光烧蚀	InGaAs量子点	12	[5]
注: 针对NV色心零声子线辐射速率的增强倍率.

DownLoad: CSV

年份	结构	加工方法	量子体系	$ \mathrm{协}\mathrm{同}\mathrm{参}\mathrm{数}C $	$ Q $	文献
2013	光纤型	激光烧蚀	InGaAs量子点	2.0±1.3	30000	[80]
2015	光纤型	激光烧蚀	InAs量子点	5.5	60000	[81]
2019	芯片型	激光烧蚀	InAs量子点	150	170000	[59]
2019	光纤型	FIB刻蚀	DBT分子	12.7	120000	[31]
2021	光纤型	FIB刻蚀	DBT分子	45	120000	[82]

DownLoad: CSV

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Vol. 71, Issue 6 - 2022-03-20

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