[1] |
Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang.Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica, 2021, 70(13): 135102.doi:10.7498/aps.70.20210086 |
[2] |
She Yan-Chao, Zhang Wei-Xi, Wang Ying, Luo Kai-Wu, Jiang Xiao-Wei.Effect of oxygen vacancy defect on leakage current of PbTiO3 ferroelectric thin film. Acta Physica Sinica, 2018, 67(18): 187701.doi:10.7498/aps.67.20181130 |
[3] |
Wang Xiang, Chen Lei-Lei, Cao Yan-Rong, Yang Qun-Si, Zhu Pei-Min, Yang Guo-Feng, Wang Fu-Xue, Yan Da-Wei, Gu Xiao-Feng.Physical model of conductive dislocations in GaN Schottky diodes. Acta Physica Sinica, 2018, 67(17): 177202.doi:10.7498/aps.67.20180762 |
[4] |
Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang.Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica, 2017, 66(7): 077302.doi:10.7498/aps.66.077302 |
[5] |
Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica, 2017, 66(16): 167301.doi:10.7498/aps.66.167301 |
[6] |
Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang.Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica, 2015, 64(23): 237302.doi:10.7498/aps.64.237302 |
[7] |
Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang.New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica, 2015, 64(6): 067304.doi:10.7498/aps.64.067304 |
[8] |
Yue Shan, Liu Xing-Nan, Shi Zhen-Gang.Experimental study on breakdown voltage between parallel plates in high-pressure helium. Acta Physica Sinica, 2015, 64(10): 105101.doi:10.7498/aps.64.105101 |
[9] |
Duan Bao-Xing, Cao Zhen, Yuan Xiao-Ning, Yang Yin-Tang.New REBULF super junction LDMOS with the N type buffered layer. Acta Physica Sinica, 2014, 63(22): 227302.doi:10.7498/aps.63.227302 |
[10] |
Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong.A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate. Acta Physica Sinica, 2014, 63(10): 107302.doi:10.7498/aps.63.107302 |
[11] |
Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li.A dual-trench silicon on insulator high voltage device with an L-shaped source field plate. Acta Physica Sinica, 2014, 63(23): 237305.doi:10.7498/aps.63.237305 |
[12] |
Duan Bao-Xing, Yang Yin-Tang.Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica, 2014, 63(5): 057302.doi:10.7498/aps.63.057302 |
[13] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103 |
[14] |
Wen Juan-Hui, Yang Qiong, Cao Jue-Xian, Zhou Yi-Chun.Strain control of the leakage current of the ferroelectric thin films. Acta Physica Sinica, 2013, 62(6): 067701.doi:10.7498/aps.62.067701 |
[15] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
[16] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302.doi:10.7498/aps.61.227302 |
[17] |
Chen Guo-Yun, Xin Yong, Huang Fu-Cheng, Wei Zhi-Yong, Lei Sheng-Jie, Huang San-Bo, Zhu Li, Zhao Jing-Wu, Ma Jia-Yi.Performances of a boron-lined ionization chamber used in neutron/-ray mixed field of reactors. Acta Physica Sinica, 2012, 61(8): 082901.doi:10.7498/aps.61.082901 |
[18] |
Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng.Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461.doi:10.7498/aps.57.2456 |
[19] |
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan.Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica, 2007, 56(5): 2895-2899.doi:10.7498/aps.56.2895 |
[20] |
Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong.Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica, 2006, 55(5): 2513-2517.doi:10.7498/aps.55.2513 |