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Over the past two decades significant advances have been made in the research of superconducting quantum computing and quantum simulation, in particular of the device design and fabrication that leads to ever-increasing superconducting qubit coherence times and scales. With Google’s announcement of the realization of “quantum supremacy”, superconducting quantum computing has attracted even more attention. Superconducting qubits are macroscopic objects with quantum properties such as quantized energy levels and quantum-state superposition and entanglement. Their quantum states can be precisely manipulated by tuning the magnetic flux, charge, and phase difference of the Josephson junctions with nonlinear inductance through electromagnetic pulse signals, thereby implementing the quantum information processing. They have advantages in many aspects and are expected to become the central part of universal quantum computing. Superconducting qubits and auxiliary devices prepared with niobium or other hard metals like tantalum as bottom layers of large-area components have unique properties and potentials for further development. In this paper the research work in this area is briefly reviewed, starting from the design and working principle of a variety of superconducting qubits, to the detailed procedures of substrate selection and pretreatment, film growth, pattern transfer, etching, and Josephson junction fabrication, and finally the practical superconducting qubit and their auxiliary device fabrications with niobium base layers are also presented. We aim to provide a clear overview for the fabrication process of these superconducting devices as well as an outlook for further device improvement and optimization in order to help establish a perspective for future progress.
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Keywords:
- superconducting qubit/
- device fabrication/
- quantum computing
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Deposition Sputtered HiPIMS opt HiPIMS norm T1/μs 56 ± 12 33 ± 2 17 ± 9 RRR 8.9 ± 0.1 5.0 ± 0.2 2.9 ± 0.1 Tc/K 9.0 ± 0.1 8.6 ± 0.1 8.1 ± 0.1 GSA/nm2 1140 ± 70 500 ± 50 180 ± 30 Nb 61 ± 3 64 ± 3 45 ± 2 NbOx 15.1 ± 0.2 16.0 ± 0.3 20.4 ± 0.8 NbO 0 ± 2 0 ± 1 5 ± 1 NbO2 3.1 ± 0.4 3.5 ± 0.2 10 ± 2 Nb2O5 20 ± 1 15.9 ± 0.8 19 ± 2 Suboxide 19 ± 2 20 ± 1 36 ± 2 Processa In vacuo cleaning w/μm f0/GHz Qi-H×106 Qi-L×106 (A) Sputter 100 eV Ar+mill for 2 min 3
153.833
6.1294.30
4.500.16
0.40(B) E-beam 60 eV Ar+mill for 2 min 3
153.810
6.0899.90
4.400.66
0.72(C) MBE None 6
154.973
6.1205.70
4.330.53
0.76(D) MBE LLbanneal 3
153.773
6.1256.58
5.380.75
0.80(E) MBE LLband 850 ℃ anneal 3
153.876
6.12710.10
6.401.15
0.92 -
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