- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

As the second-generation compound semiconductor material, indium phosphide (InP) has strong irradiation resistance and high photoelectric conversion efficiency. It has advantages in the field of photonics and radio frequency. In atmospheric space, high-energy cosmic rays enter into the earth’s atmosphere and interact with nitrogen (N), oxygen (O) and other elements to produce secondary cosmic rays. The irradiation particles in the atmosphere are mainly neutrons because the penetration of charged particles is weak. The InP semiconductor devices are affected by atmospheric neutron irradiation of various energy from all directions, which results in the internal defects in InP crystals, the degradation of device performance and the reduction of device lifetime. In this paper, Monte Carlo simulation software Geant4 is used to simulate the neutron irradiation effect, and the initial state distribution of displacement damage caused by neutrons with different energy is obtained, including the distribution of non-ionized energy loss (NIEL) with depth, the relationship between NIEL and the energy of incident neutrons, and the type, number and energy of primary knock-on atoms (PKA). The results show that 1) the NIEL is uniformly distributed when material thickness is on the order of μm and for the material thickness on the order of cm and more, the NIEL decreases as the depth increases and can be reduced to zero when the target material is thick enough; 2) by analyzing the NIEL produced by 1–20 MeV neutrons incident on 3-μm InP and their distribution with depth, it is found that the NIEL first increases and then decreases with incident neutron energy increasing. This trend is caused mainly by PKA produced through the inelastic scattering reaction; 3) by analyzing the type and the energy of PKA produced by 1–20 MeV neutrons incident on 3 μm InP, it is found that the PKA of In/P accounts for a large proportion, which causes displacement damage mainly, and the higher the neutron energy, the richer the variety of PKA is and the greater the maximum kinetic energy of PKA, but the PKAs mainly distribute in the low energy part. The present research has theoretical and guiding value for the long-term application of InP-based 5G devices in atmospheric neutron irradiation environment.

Keywords:

Authors and contacts

Corresponding author:He Chao-Hui,hechaohui@mail.xjtu.edu.cn

Funds:Project supported by the Basic Strength Program of China (Grant No. 2019-JCJQ-ZD-267)

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]

Cited By

DownLoad: Full-Size Img PowerPoint

入射中子能量/MeV	反冲核(PKA)种类	最小动能/eV	最大动能/keV	元素占比/%
1.00	^113—116In	1.11	35.01	70.51
1.00	^31—32P	2.48	122.37	29.49
2.54	^113—116In	1.41	89.03	62.08
	^31—32P	14.74	310.69	36.57
	¹H,³¹Si	1.57	263.36	1.36
5.00	^{113, 115, 116}In	2.33	173.05	59.21
	^31—32P	6.10	612.41	37.57
	¹H,³¹Si,⁴He,²⁸Al,	2.21	4283.90	3.22
8.00	^{113, 115}In	1.57	281.82	64.42
	³¹P	17.12	980.54	28.80
	¹H,³¹Si,⁴He,²⁸Al,^{113, 115}Cd	1.00	7282.10	6.78
10.00	^{113, 115}In	1.29	350.53	66.42
	³¹P	1.00	1225.70	25.58
	¹H,³¹Si,⁴He,²⁸Al,¹¹⁵Cd,¹¹²Ag	1.00	9287.10	8.00
12.00	^{113, 115}In	1.11	417.21	63.21
	³¹P	1.00	1473.49	27.51
	¹H,³¹Si,⁴He,²⁸Al,^{113, 115}Cd,¹¹²Ag	1.00	14315.00	9.29
14.00	^{113, 115}In	1.04	492.34	60.26
	³¹P	1.00	1705.77	29.71
	^1—2H,³¹Si,⁴He,²⁸Al,^112—115Cd,^{110, 112}Ag	1.00	16463.00	10.03
16.00	^{113, 115}In	1.12	556.47	57.82
	³¹P	1.00	1967.15	31.98
	^1—2H,³¹Si,⁴He,²⁸Al,^113—115Cd,^{110, 112}Ag	1.00	17593.00	10.20
18.00	^{113, 115}In	1.45	631.07	54.70
	³¹P	1.00	2215.82	34.42
	^1—3H,³¹Si,⁴He,²⁸Al,^111—115Cd,^{110, 112}Ag	1.00	21054.00	10.88
19.90	^{113, 115}In	2.04	703.43	50.34
	³¹P	1.00	2453.43	37.58
	^1—3H,³¹Si,⁴He,²⁸Al,^111—115Cd,^{110, 112}Ag	1.00	22391.00	12.08

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]

[1]	Yan Li-Bin, Bai Yu-Rong, Li Pei, Liu Wen-Bo, He Huan, He Chao-Hui, Zhao Xiao-Hong.First-principles calculations of point defect migration mechanisms in InP. Acta Physica Sinica, 2024, 0(0): .doi:10.7498/aps.73.20240754
[2]	Xiao Shi-Liang, Wang Zhao-Hui, Wu Hong-Yi, Chen Xiong-Jun, Sun Qi, Tan Bo-Yu, Wang Hao, Qi Fu-Gang.Spectral analysis techniques in measuring neutron-induced gamma production cross-section. Acta Physica Sinica, 2024, 73(7): 072901.doi:10.7498/aps.73.20231980
[3]	He Huan, Bai Yu-Rong, Tian Shang, Liu Fang, Zang Hang, Liu Wen-Bo, Li Pei, He Chao-Hui.Simulation of displacement damage induced by protons incident on Al_xGa_1–xN materials. Acta Physica Sinica, 2024, 73(5): 052402.doi:10.7498/aps.73.20231671
[4]	Bai Yu-Rong, Li Pei, He Huan, Liu Fang, Li Wei, He Chao-Hui.Simulation of displacement damage of InP induced by protons and α-particles in low Earth orbit. Acta Physica Sinica, 2024, 73(5): 052401.doi:10.7498/aps.73.20231499
[5]	Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan.Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica, 2023, 72(14): 146101.doi:10.7498/aps.72.20230161
[6]	Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Ma Teng, Cai Zong-Qi, Chen Yi-Qiang.Study on characteristics of neutron-induced leakage current increase for SiC power devices. Acta Physica Sinica, 2023, 72(18): 186102.doi:10.7498/aps.72.20230976
[7]	Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui.Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica, 2021, 70(17): 172401.doi:10.7498/aps.70.20210303
[8]	Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064
[9]	Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei.Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101.doi:10.7498/aps.69.20191209
[10]	Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714
[11]	Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong.Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, 2018, 67(18): 182401.doi:10.7498/aps.67.20181095
[12]	Tang Du, He Chao-Hui, Zang Hang, Li Yong-Hong, Xiong Cen, Zhang Jin-Xin, Zhang Peng, Tan Peng-Kang.Multi-scale simulations of single particle displacement damage in silicon. Acta Physica Sinica, 2016, 65(8): 084209.doi:10.7498/aps.65.084209
[13]	Wen Lin, Li Yu-Dong, Guo Qi, Ren Di-Yuan, Wang Bo, Maria.Analysis of ionizing and department damage mechanism in proton-irradiation-induced scientific charge-coupled device. Acta Physica Sinica, 2015, 64(2): 024220.doi:10.7498/aps.64.024220
[14]	Che Chi, Liu Qing-Feng, Ma Jing, Zhou Yan-Ping.Displacement damage effects on the characteristics of quantum dot lasers. Acta Physica Sinica, 2013, 62(9): 094219.doi:10.7498/aps.62.094219
[15]	Ma Jing, Che Chi, Han Qi-Qi, Zhou Yan-Ping, Tan Li-Ying.Displacement damage effect on the characteristics of quantum well laser. Acta Physica Sinica, 2012, 61(21): 214211.doi:10.7498/aps.61.214211
[16]	Li Xiao-Ling, Lin Shi-Yao, Hu Li-Qun, Xu Ping, Duan Yan-Min, Mao Song-Tao, Zhang Ji-Zhong, Wang Xiang-Qi, Zhong Guo-Qiang.Study of neutron radiation behavior for RF heating on HT-7. Acta Physica Sinica, 2011, 60(1): 012901.doi:10.7498/aps.60.012901
[17]	Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun.Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, 2007, 56(3): 1603-1607.doi:10.7498/aps.56.1603
[18]	Yang Jun, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Wang Bo.Influence of deep level defects on electrical compensation in semi-insulating InP materials. Acta Physica Sinica, 2007, 56(2): 1167-1171.doi:10.7498/aps.56.1167
[19]	He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Li Guo-Zheng, Wang Yan-Ping.Mechanism of radiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(9): 2235-2238.doi:10.7498/aps.52.2235
[20]	DING RUI-QIN, WANG HAO, W.F.LAU, W.Y.CHEUNG, S.P.WONG, WANG NING-JUAN, YU YING-MIN.THE MICROSTRUCTURE AND OPTICAL PROPERTIES OF THE NANOCOMPOSITE FILMS OF InP/SiO2. Acta Physica Sinica, 2001, 50(8): 1574-1579.doi:10.7498/aps.50.1574

Catalog

Vol. 71, Issue 8 - 2022-04-20

Metrics

Abstract views:4970
PDF Downloads:178
Cited By:0

Search

Article