- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Diamond has a wide band gap, high carrier mobility, and high thermal conductivity, thereby possessing great potential applications in high power, and high temperature electronics devices, and also inhigh temperature logic circuit. In this work, we fabricate a hydrogen terminated diamond metal-oxide-semiconductor field effect transistor (MOSFET) by using the atomic layer deposition grown Al ₂O ₃as a gate dielectric and passivation layer. The device has a gate length and width of 4 μm and 50 μm, respectively. The device delivers a maximum output current of about 113.4 mA/mm at V _GSof –6 V and an ultra-high on/off ratio of 10 ⁹. In addition, we fabricate three resistors, respectively, with an interelectrode distance of 20, 80 and 160 μm, corresponding to the resistance value of 16.7, 69.5 and 136.4 kΩ, respectively. The logic inverter is realized by combining the MOSFET with the load resistance, and the characteristics of the logic inverter are demonstrated successfully, which indicates that the diamond MOSFET has great potential applications in future logic circuits.

Keywords:

Authors and contacts

Corresponding author:Ren Ze-Yang,zeyangren@xidian.edu.cn

Funds:Project supported by the National Special Fund for Magnetic Confinement Nuclear Fusion Energy R&D Program (Grant No. 2019YFE03100200), the National Natural Science Foundation of China (Grant Nos. 62127812, 62004148, 61874080), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZYHW0015), the Natural Science Basic Research Program of Shanxi Province, China (Grant Nos. 2020JQ-315, 2018ZDCXL-GY-01-01-02, 2019ZDLGY16-02), and the China Postdoctoral Science Foundation (Grant No. 2021TQ0256).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

Cited By

DownLoad: Full-Size Img PowerPoint

Al₂O₃ 厚度/nm	生长温度/℃	L_G/μm	L_GD/μm	电流密度 /(mA·mm^–1)	参考文献
6	80	0.1	—	585.0	[8]
20	200	2.0	2	339.0	[14]
20	300	2.0	2	85.0	[14]
25	300	2.0	2	339.0	[17]
83	450	5.0	20	12.0	[23]
200	450	20.0	10	18.2	[24]
200	450	2.0	17	120.0	[25]
200	450	6.0	6	12.0	[6]
200	450	15.0	24	5.2	[10]
400	450	2.0	17	59.0	[26]
15	300	4.0	2	113.4	本工作

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

[1]	Liu Zi-Yi, Chu Fu-Qiang, Wei Jun-Jun, Feng Yan-Hui.Interface thermal conductance and phonon thermal transport characteristics of diamond/carbon nanotube interface. Acta Physica Sinica, 2024, 73(13): 138102.doi:10.7498/aps.73.20240323
[2]	Wu Jian-Dong, Cheng Zhi, Ye Xiang-Yu, Li Zhao-Kai, Wang Peng-Fei, Tian Chang-Lin, Chen Hong-Wei.Coherent electrical control of single electron spin in diamond nitrogen-vacancy center. Acta Physica Sinica, 2022, 71(11): 117601.doi:10.7498/aps.70.20220410
[3]	Zhang Jin-Feng, Yang Peng-Zhi, Ren Ze-Yang, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Xu Lei, Hao Yue.Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor. Acta Physica Sinica, 2018, 67(6): 068101.doi:10.7498/aps.67.20171965
[4]	Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue.Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica, 2017, 66(20): 208101.doi:10.7498/aps.66.208101
[5]	Wu Chun-Yan, Du Xiao-Wei, Zhou Lin, Cai Qi, Jin Yan, Tang Lin, Zhang Han-Ge, Hu Guo-Hui, Jin Qing-Hui.Characterization and preliminary application of top-gated graphene ion-sensitive field effect transistors. Acta Physica Sinica, 2016, 65(8): 080701.doi:10.7498/aps.65.080701
[6]	Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng.Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica, 2015, 64(24): 247802.doi:10.7498/aps.64.247802
[7]	Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian.Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor. Acta Physica Sinica, 2014, 63(19): 197302.doi:10.7498/aps.63.197302
[8]	Liu Yan-Wen, Wang Xiao-Xia, Zhu Hong, Han Yong, Gu Bing, Lu Yu-Xin, Fang Rong.Influence of diamond on heat dissipation capability of slow-wave structure of helix TWT. Acta Physica Sinica, 2013, 62(23): 234402.doi:10.7498/aps.62.234402
[9]	Hu Mei-Hua, Bi Ning, Li Shang-Sheng, Su Tai-Chao, Li Xiao-Lei, Hu Qiang, Jia Xiao-Peng, Ma Hong-An.Synthesis of gem diamond crystals by multiseed method using China-type cubic high-pressure apparatus. Acta Physica Sinica, 2013, 62(18): 188103.doi:10.7498/aps.62.188103
[10]	Lin Xue-Ling, Pan Feng-Chun.The magnetism study of N-doped diamond. Acta Physica Sinica, 2013, 62(16): 166102.doi:10.7498/aps.62.166102
[11]	Xiao Hong-Yu, Su Jian-Feng, Zhang Yong-Sheng, Bao Zhi-Gang.Synthesis and characterization of the Gem-diamond by temperature gradient method. Acta Physica Sinica, 2012, 61(24): 248101.doi:10.7498/aps.61.248101
[12]	Qin Jie-Ming, Ying Zhang, Cao Jian-Ming, Tian Li-Fei.Synthesis and characterization of the grinding compoundlevel diamond by pure Fe catalyst. Acta Physica Sinica, 2011, 60(5): 058102.doi:10.7498/aps.60.058102
[13]	Liu Feng-Bin, Wang Jia-Dao, Chen Da-Rong, Zhao Ming, He Guang-Ping.The microstructures of the diamond (100) surfaces with different density of hydrogen adsorption. Acta Physica Sinica, 2010, 59(9): 6556-6562.doi:10.7498/aps.59.6556
[14]	Liang Zhong-Zhu, Liang Jing-Qiu, Zheng Na, Jia Xiao-Peng, Li Gui-Ju.Optical absorbance of diamond doped with nitrogen and the nitrogen concentration analysis. Acta Physica Sinica, 2009, 58(11): 8039-8043.doi:10.7498/aps.58.8039
[15]	Liang Zhong-Zhu, Liang Jing-Qiu, Zheng Na, Jiang Zhi-Gang, Wang Wei-Biao, Fang Wei.Study on the compound film of diamond for absorbing radiation. Acta Physica Sinica, 2009, 58(11): 8033-8038.doi:10.7498/aps.58.8033
[16]	Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang.Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica, 2008, 57(9): 5887-5892.doi:10.7498/aps.57.5887
[17]	Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei.Nanoelectronic logic circuits with carbon nanotube transistors. Acta Physica Sinica, 2007, 56(2): 1054-1060.doi:10.7498/aps.56.1054
[18]	Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei.The influence of contact metal in carbon nanotube transistor. Acta Physica Sinica, 2006, 55(10): 5460-5465.doi:10.7498/aps.55.5460
[19]	Hu Xiao-Jun, Li Rong-Bin, Shen He-Sheng, He Xian-Chang, Deng Wen, Luo Li-Xiong.Investigation of defect properties in doped diamond films. Acta Physica Sinica, 2004, 53(6): 2014-2018.doi:10.7498/aps.53.2014
[20]	Li Rong-Bin, Dai Yong-Bing, Hu Xiao-Jun, Shen He-Sheng, He Xian-Chang.A molecular dynamics study of energetic particle bombardment on diamond. Acta Physica Sinica, 2003, 52(12): 3135-3141.doi:10.7498/aps.52.3135

Catalog

Vol. 71, Issue 8 - 2022-04-20

Metrics

Abstract views:4201
PDF Downloads:108
Cited By:0

Search

Article