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Abstract

In order to improve the radiation-resistance ability of the InP based high electron mobility transistor (InP HEMT) by optimizing the epitaxial structure design, a series of InP HEMT epitaxial structure materials with different structure parameters is grown by gas source molecular beam epitaxy. These samples are irradiated at room temperature by a 1.5-MeV electron beam at the same irradiation fluence of 2 × 10 ¹⁵cm ^–2. The electrical properties of the two-dimensional electron gas (2DEG) for InP HEMT epitaxial materials before and after irradiation are measured by Hall measurements to obtain the changes of the normalized 2DEG density and electron mobility along with the epitaxial structure parameters. The relation between 2DEG radiation damage and epitaxial structure parameters (such as Si-δ-doping density, spacer thickness, channel thickness and channel In content) of InP HEMT epitaxial structure materials is analyzed. The results show that the 2DEG of the InP HEMT epitaxial structure material with higher Si-δ-doping density, thinner spacer thickness, thicker channel thickness and lower channel In content has lower radiation damage, which possesses the stronger radiation-resistance ability.

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Corresponding author:Zhou Shu-Xing,sxzhou2020@163.com

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11705277, 61434006) and the Doctoral Research Foundation Project of Hubei University of Arts and Science, China (Grant No. kyqdf2059038).

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[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]

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Layer	Material	Doping	Thickness/nm
Cap layer 1	In_0.65Ga_0.35As	n⁺	10
Cap layer 2	In_0.53Ga_0.47As	n⁺	15
Cap layer 3	In_0.52Al_0.48As	n⁺	15
Etch-stopper	InP	un	4
Barrier layer	In_0.52Al_0.48As	un	8
δ-doping	Si	(3—6)×10¹²cm^–2
Spacer layer	In_0.52Al_0.48As	un	h_w
Channel	In_xGa_1–xAs	un	t_w
Buffer layer	In_0.52Al_0.48As	un	300
S.I.InP sub

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Sample No.	RT		77 K
Sample No.	n/ (10¹²cm^–2)	u/ (cm²·V^–1·s^–1)	n/ (10¹²cm^–2)	u/ (cm²·V^–1·s^–1)
A1	1.851	8010	1.858	17100
A2	2.201	7920	2.205	16500
A3	2.394	7810	2.402	15900
A4	2.695	7530	2.700	14800
B1	2.557	7870	2.557	15100
B2	2.394	7810	2.402	15900
B3	2.272	7980	2.270	16700
B4	2.105	8110	2.085	17600
C1	2.408	8310	2.410	18400
C2	2.420	8960	2.421	22600
C3	2.431	9510	2.430	26200
C4	2.444	10500	2.445	32100
D1	2.387	7780	2.357	15600
D2	2.394	7810	2.402	15900
D3	2.398	7820	2.404	16000
D4	2.340	7810	2.405	16100

DownLoad: CSV

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[8]
[9]
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[13]
[14]
[15]
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Vol. 71, Issue 3 - 2022-02-05

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