Optimization of Ga content gradient in Cu(In,Ga)Se<sub>2</sub> solar cells through machine learning and device simulation

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Abstract

Cu(In,Ga)Se ₂(CIGS) solar cell is a kind of highly efficient thin film solar cell, for which Ga ratio (Ga/(Ga+In), GGI) gradient engineering is an efficient approach to achieving high open circuit voltage under no short circuit current loss. In this work, we firstly evaluate the room and the strategies for improving the device performance of the CIGS solar cells based on the comparison among their theoretical efficiency limits. Then we investigate the different schemes of “V” type GGI gradient and their effects on device performance through machine learning and device simulation. Based on these studies, we optimize the scheme of “V” type GGI gradient and obtain a high efficiency of 26% from device simulation. The carrier kinetics for the effect of modifying GGI gradient on device performance are analyzed. This work provides an approach to optimizing the GGI gradient to obtain highly efficient CIGS solar cells, which is referable for experimental optimization.

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Corresponding author:Song Dan-Dan,ddsong@bjtu.edu.cn

Funds:Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500200).

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DownLoad: Full-Size Img PowerPoint

Cell type	E_th/eV	PCE/%	V_OC/mV	J_SC/(mA·cm^–2)	FF/%	J_SQ/(mA·cm^–2)	W_OC/mV	J_SC/J_SQ/%	机构	参考文献
CIGS	1.088	23.35	734.0	39.58	80.4	44.0	354.0	89.95	SF	[1]
CIGS	1.130	22.92	746.0	38.50	79.7	43.0	384.0	89.53	SF	[11]
CIGS	1.143	22.60	741.0	37.80	80.6	42.3	402.0	89.36	ZSW	[12]
CIGS	1.110	22.30	722.0	39.40	78.2	43.7	388.0	90.16	SF	[13]
c-Si	1.120	26.70	738.0	42.65	84.9	43.3	382.0	98.50	Kaneka	[14]
c-Si	1.120	26.60	740.3	42.50	84.7	43.3	379.7	98.15	Kaneka	[14]
c-Si	1.120	26.30	744.0	42.30	83.8	43.3	376.0	97.69	Kaneka	[15]
c-Si	1.120	26.10	726.6	42.62	84.3	43.3	393.4	98.43	ISFH	[16]
钙钛矿	1.550	25.20	1180.5	25.14	84.8	27.1	369.5	92.77	KRICT	[17]
钙钛矿	1.480	24.64	1181.4	26.18	79.6	29.5	298.6	83.53	UNIST	[18]
钙钛矿	1.574	24.20	1194.8	24.16	84.0	26.2	379.2	92.21	KRICT	[19]
钙钛矿	1.536	23.70	1169.7	25.40	79.8	27.6	366.3	92.03	ISCAS	[20]

DownLoad: CSV

	B:ZnO	Zn(Mg, O)	Zn(O, S, OH)_x	CIGS
Thickness/nm	500	50	8	1000
Permittivity/1	9	10	9	13.6
Eg/eV	3.3	3.6	3.6	1.06—1.66
Affinity/eV	4.4	4.2	4.2	3.89—4.49
N_c/(10¹⁸cm^–3)	2.2	2.2	2.2	2.2
N_v/(10¹⁹cm^–3)	1.8	1.8	1.8	1.8
µ_n/(cm²·V^–1·s^–1)	100	100	100	100
µ_p/(cm²·V^–1·s^–1)	25	25	25	25
N_d/(10¹⁷cm^–3)	10	10	1	0
N_a/(10¹⁶cm^–3)	0	0	0	2

DownLoad: CSV

	GGI_F	GGI_M	GGI_B
V_OC	0.38	0.35	0.34
J_SC	–0.26	–0.41	–0.12

DownLoad: CSV

模型	1	2	3	4	5	6	7
GGI_F	0.40	0.40	0.40	0.40	0.40	0.40	0.50
GGI_M	0.10	0.15	0.20	0.25	0.30	0.35	0.10
GGI_B	0.84	0.77	0.71	0.65	0.58	0.52	0.80
模型	8	9	10	11	12	13	14
GGI_F	0.50	0.50	0.50	0.60	0.60	0.60	0.60
GGI_M	0.20	0.30	0.40	0.10	0.20	0.30	0.40
GGI_B	0.67	0.54	0.42	0.76	0.63	0.50	0.44

DownLoad: CSV

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Vol. 70, Issue 23 - 2021-12-05

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