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Abstract

In recent years, two-dimensional transition metal chalcogenides (TMDCs) have been widely studied in the field of photodetection due to their excellent electronic and optical properties. Compared with the more reported field-effect transistor and heterojunction devices, homojunction devices have unique advantages in photodetection. This article focuses on the researches of photodetectors based on the homojunctions of TMDCs. First, the working principle of homojunction optoelectronic device is introduced. Then, the reported TMDCs based homojunctions are classified and summarized according to the adopted carrier modulation techniques. In addition, this article also specifically analyzes the transport process of photogenerated carriers in homojunction device, and explains why the lateral p-i-n homojunction exhibits fast photoresponse speed. Finally, the research progress of the TMDCs based homojunction photodetectors is summarized and the future development is also prospected.

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Authors and contacts

Corresponding author:Zhang You-Wei,youweizhang@hust.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 12074134), the Shenzhen Science and Technology Project, China (Grant Nos. JCYJ20180507183904841, GJHZ20200731095203009), and the Natural Science Foundation of Hubei Province, China (Grant No. 2020CFB406)

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材料	器件结构	载流子调控方式		整流比	理想因子	光源波长/nm	偏置电压 V_pn/V	响应度/ mA·W^–1	比探测率/ Jones	响应时间		文献
材料	器件结构	n型	p型	整流比	理想因子	光源波长/nm	偏置电压 V_pn/V	响应度/ mA·W^–1	比探测率/ Jones	上升/ms	下降/ms	文献
单层WSe₂	横向p-n	正栅压	负栅压	10⁵	1.9	532	2	210	—	—	—	[38]
单层WSe₂	横向p-n	正栅压	负栅压	—	2.14	532	–1	0.7	—	10.4	9.8	[41]
多层MoTe₂	横向p-n	铁电极化	铁电极化	5×10⁵	2	520	0	5	3×10¹²	0.03	0.045	[52]
多层MoS₂	横向p-n	铁电极化	铁电极化	10⁵	1.7	532	0	15	—	0.01	0.02	[54]
少层MoTe₂	横向p-n	UV诱导电场	UV诱导电场	10³	2.1	532	0	160	—	2	2	[57]
多层MoS₂	横向p-n	—	AuCl₃	60	1 (V_g= –40 V)	500	1.5	5070	3×10¹⁰	100	200	[58]
少层MoS₂	垂直p-n	BV	AuCl₃	100	1.6	655	–1	30	—	—	—	[59]
少层WSe₂	横向p-n	N₂H₄	—	~10³	—	470	–5	30	6.18×10⁸	2	2	[60]
多层WSe₂	横向p-n	N₂H₄	—	10⁵	1.1	635	–5 (V_g= –40 V)	468	2.5×10⁹	4	4	[37]
少层MoSe₂	横向p-n	PPh3	MoO_x(退火)	10⁴	1.2	532	0	1300	—	—	—	[61]
多层WSe₂	横向p-n	PEI	负栅压	10³	1.66	520	0	80	10¹¹	0.2	0.06	[63]
少层WSe₂	横向p-n	CTAB	—	10³	1.64	450	–1.5	3×10⁴	10¹¹	7.8	7.7	[64]
多层WSe₂	横向p-n	—	N₂O plasma	10⁶(V_g= –60 V)	3.1	520	1	2490	—	8	30	[66]
多层WSe₂	横向p-n	—	WO_x(O₂Plasma)	—	—	520	1	250	7.7×10⁹	41.8	2289.8	[67]
多层WSe₂	横向p-n	正栅压	WO_x(laser)	—	—	633	0	800	—	0.136	0.039	[69]
多层MoTe₂	垂直p-n	DUV(N₂)	—	10⁴	1.05	530	0	850	—	—	—	[70]
多层MoTe₂	横向p-n	DUV(N₂)	—	2.5×10⁴	~1	850	0	5500	—	29	38	[71]
少层MoS₂	垂直p-n	元素掺杂(Fe)	元素掺杂(Nb)	—	~2.5	660	0	25	—	80	80	[86]
单层MoS₂	横向n⁺–n	PSS诱导缺陷修复(n⁺)	—(n)	~150	1.6	575	0	308	—	810	750	[91]
双层MoS₂	垂直n⁺–n	PSS诱导缺陷修复(n⁺)	—(n)	72	1.6	532	0	54.6	—	3100	3800	[92]
多层WSe₂	横向p-i-n	WSe_2–_y (Ar Plasma)	WO_x(O₂plasma)	10⁶	1.14	450	0	105	2.2×10¹³	0.000264	0.000552	[68]
MoS₂	横向单层-多层	—	—	10³(V_g= 10 V)	1.95(V_g= 5 V)	470	—	10⁶	7×10¹⁰	2	2000	[93]

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Vol. 70, Issue 17 - 2021-09-05

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