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Abstract

Silicon carbide (SiC) is a promising candidate for applications in high temperature, high voltage, high power, and low-power dissipation devices due to its unique properties like wide band gap, high critical electric field, and high thermal conductivity. However, one of the main bottlenecks hindering the SiC power devices from developing and being put into practical application is the fabrication of good metal/SiC contact. In this review, the research status of Ohmic contact and Schottky contact of SiC device are compared and analyzed. The complicated interface properties and uncontrollable barrier height at metal/SiC interface are revealed. In addition, the research status of metal/SiC contact barrier and interface state properties are analyzed, and the important significance of effective control of interface barrier is highlighted. Furthermore, the research progress of metal/SiC contact interface regulation technology is specially analyzed. The future development directions in the nature of metal/SiC interface states and interface control technology are finally prospected.

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Authors and contacts

Corresponding author:Liang Ting,liangtingnuc@163.com; Gu Xiao-Gang,guxg@jsnu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 62074071)

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Vol. 70, Issue 20 - 2021-10-20

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