[1] |
Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li.Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica, 2022, 71(17): 178501.doi:10.7498/aps.71.20220818 |
[2] |
Hao Guang-Hui, Han Pan-Yang, Li Xing-Hui, Li Ze-Peng, Gao Yu-Juan.The electron emission characteristics of GaAs photocathode with vacuum-channel structure. Acta Physica Sinica, 2020, 69(10): 108501.doi:10.7498/aps.69.20191893 |
[3] |
Wang San-Sheng, Li Fang, Wu Han, Zhang Zhu-Li, Jiang Wen, Zhao Peng.Low-energy ion beam modified surface property and mechanism of high temperature superconductor YBa2Cu3O7- thin film. Acta Physica Sinica, 2018, 67(3): 036103.doi:10.7498/aps.67.20170822 |
[4] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[5] |
Li Fang-Hao, Zhang Hai-Jun, Zhang Dong-Xian.Theoretical and visualization study of laserinduced surface acoustic wave on annular stator. Acta Physica Sinica, 2013, 62(22): 224209.doi:10.7498/aps.62.224209 |
[6] |
Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
[7] |
Shan Lian-Qiang, Gao Yu-Lin, Xin Jian-Ting, Wang Feng, Peng Xiao-Shi, Xu Tao, Zhou Wei-Min, Zhao Zong-Qing, Cao Lei-Feng, Wu Yu-Chi, Zhu Bin, Liu Hong-Jie, Liu Dong-Xiao, Shui Min, He Ying-Ling, Zhan Xia-Yu, Gu Yu-Qiu.Laser-driven reservoir target for quasi-isentropic compression in aluminum. Acta Physica Sinica, 2012, 61(13): 135204.doi:10.7498/aps.61.135204 |
[8] |
Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang.Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica, 2011, 60(3): 038503.doi:10.7498/aps.60.038503 |
[9] |
Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang.Comparison between gradient-doping and uniform-doping GaN photocathodes. Acta Physica Sinica, 2011, 60(4): 047901.doi:10.7498/aps.60.047901 |
[10] |
Li Biao, Chang Ben-Kang, Xu Yuan, Du Xiao-Qing, Du Yu-Jie, Wang Xiao-Hui, Zhang Jun-Ju.Research and development of GaN photocathode. Acta Physica Sinica, 2011, 60(8): 088503.doi:10.7498/aps.60.088503 |
[11] |
Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
[12] |
Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu.Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica, 2011, 60(10): 107802.doi:10.7498/aps.60.107802 |
[13] |
Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui.Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903.doi:10.7498/aps.60.017903 |
[14] |
Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan.Evaluation of surface potential barriers after activation of GaAs photocathode. Acta Physica Sinica, 2011, 60(4): 044210.doi:10.7498/aps.60.044210 |
[15] |
Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming.Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica, 2011, 60(5): 058101.doi:10.7498/aps.60.058101 |
[16] |
Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun.Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859.doi:10.7498/aps.59.2855 |
[17] |
Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
[18] |
Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
[19] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping.Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica, 2007, 56(10): 6109-6113.doi:10.7498/aps.56.6109 |
[20] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |