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Abstract

Current photovoltaic market is dominated by crystalline silicon (c-Si) solar modules and this status will last for next decades. Among all high-efficiency c-Si solar cells, the tunnel oxide passivated contact (TOPCon) solar cell has attracted much attention due to its excellent passivation and compatibility with the traditional c-Si solar cells. The so-called tunnel oxide passivated contact (TOPCon) consists of an ultra-thin silicon oxide layer less than 2 nm in thickness and a heavily doped poly-Si layer, which is used for implementing effective passivation and selective collection of carriers. This TOPCon solar cell has some advantages including no laser contact opening, no light-induced degradation and no elevated temperature-induced degradation because of N-type c-Si wafer, compatibility with high temperature sintering and technical scalability. This paper first introduces the basic structure and principles of TOPCon solar cells, then compares the existing methods of preparing ultra-thin silicon oxide layer and heavily doped poly-Si layer, and finally points out the future research direction of this cell based on the analysis of the current research status.

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Authors and contacts

Corresponding author:Hou Guo-Fu,gfhou@nankai.edu.cn

Funds:Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500402) and the National Natural Science Foundation of China (Grant No. 62074084).

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Cited By

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Institution	Type	E_ff/ %	V_oc/ mV	J_sc/ (mA·cm^–2)	FF/ %	Area/ cm²	Year
Trina	N-type i-TOPCon	24.58	717	40.6	84.5	244.31	2020^[10]
JinkoSolar/AUO	N-type TOPCon	24.90	712.8	41.68	83.84	235.80	2021^[11]
中来	N-type TOPCon	23.19	701	39.9	83	246.21	2019^[12]
ISFH	P-type POLO	26.1	726.6	42.62	84.28	4	2018^[13]
Frauhofer ISE	N-type TOPCon	25.8	724	42.9	83.1	4	2017^[14]
Frauhofer ISE	N-type TOPCon	24.5	713	41.4	83.1	100	2017^[15]
Frauhofer ISE	N-type TOPCon	23.4	697	41.1	81.2	200	2018^[16]

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方法	优点	缺点
硝酸氧化硅片法(NAOS)	制备方法简单, 制备温度相对较低, 硝酸溶液可重复利用, 氧化层薄膜质量好^[32,33]	硝酸具有强氧化性, 且硝酸蒸汽对人体有害, 对环境也会造成污染
过氧化氢法(H₂O₂)	生成物污染小, 不会对人产生危害, 制备方法简单^[34]	H₂O₂的氧化性较弱, 为提高SiO_x的质量需额外进行退火处理
臭氧去离子氧化法(DIO₃)	具有良好的界面钝化效果^[35,36]	设备昂贵且维护成本较高
UV/O₃ 光解法	可以在UV光的照射下有效地取出Si片表面的有机残留物^[36,37]	制备工艺复杂, 且厚度均匀性相对较差
热氧化法	容易获得较高质量的SiO_x, 且 Si/SiO_x的界面态密度也非常低^[38]	漏电流密度大, 且高温带来的预算也很高
等离子体辅助N₂O氧化法	可以实现超薄SiO_x层和非晶硅层在 PECVD 中的一次沉积^[39,40]	厚度不易精确控制
阳极氧化方法	场致阳极化(FIA)可以均匀地形成超薄隧道氧化硅层^[41]	可能会导致隧道氧化层界面呈现出较低的空穴势垒能量

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方法	优点	缺点
LPCVD	产量高, 可以直接制备n型的多晶硅层	会产生绕镀, 效率相对较低
PECVD	可以进行单面制备, 效率高	产量低, 对设备要求高, 且对环境有污染
溅射法	无污染, 操作简单且安全	均匀性相对较差, 退火温度想对较高

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Vol. 70, Issue 17 - 2021-09-05

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